公开(公告)号：US20110045828A1

公开(公告)日：2011-02-24

申请号：US12867836

申请日：2009-02-16

Applicant: Atul Madan ,  Pankaj sharma ,  Nilay Kumar ,  Naveen Tandon ,  Ashwani Kesharwani ,  Deepak Kumar Garg

Inventor： Atul Madan ,  Pankaj sharma ,  Nilay Kumar ,  Naveen Tandon ,  Ashwani Kesharwani ,  Deepak Kumar Garg

IPC: H04W60/00 ,  H04W4/00

CPC classification number: H04Q3/0045 ,  H04W8/12

Abstract: This invention, in general, relates to the field of telecommunications. More particularly, the present invention relates to a centralized system and method for providing customized applications for mobile networks enhanced logic CAMEL roaming services to a mobile subscriber. The CAMEL HUB configured to process a request from the mobile subscriber to avail one or more mobile services from a visited network operator. The mobile subscriber device has a subscription to a home network operator and operates in a home CAMEL phase. The visited network operator operates in a visited CAMEL phase. The CAMEL HUB is also configured to allow the mobile subscriber device to avail the one or more mobile services seamlessly from the visited network operator independent of the visited CAMEL phase. The home CAMEL phase may or may not be different from the visited CAMEL phase.

Abstract translation: 本发明一般涉及电信领域。 更具体地，本发明涉及一种用于向移动用户提供用于移动网络增强型逻辑CAMEL漫游服务的定制应用的集中式系统和方法。 CAMEL HUB被配置为处理来自移动用户的请求以从拜访网络运营商获得一个或多个移动服务。 移动用户设备具有对家庭网络运营商的订阅并在家庭CAMEL阶段中操作。 被访问的网络运营商在拜访的CAMEL阶段中运行。 CAMEL HUB还被配置为允许移动用户设备无人地访问所访问的网络运营商，以便与所访问的CAMEL阶段无缝地利用一个或多个移动服务。 家庭CAMEL阶段可能与或不同于所访问的CAMEL阶段。

公开(公告)号：US07851313B1

公开(公告)日：2010-12-14

申请号：US11983551

申请日：2007-11-09

Applicant: Yuhao Luo ,  Deepak Kumar Nayak

Inventor： Yuhao Luo ,  Deepak Kumar Nayak

IPC: H01L21/336 ,  H01L29/80

CPC classification number: H01L29/66636 ,  H01L21/30608 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

Abstract: A semiconductor process for improved etch control in which an anisotropic selective etch is used to better control the shape and depth of trenches formed within a semiconductor material. The etchants exhibit preferential etching along at least one of the crystallographic directions, but exhibit an etch rate that is much slower in a second crystallographic direction. As such, one dimension of the etching process is time controlled, a second dimension of the etching process is self-aligned using sidewall spacers of the gate stack, and a third dimension of the etching process is inherently controlled by the selective etch phenomenon of the selective etchant along the second crystallographic direction. A deeper trench is implemented by first forming a lightly doped drain (LDD) region under the gate stack and using the sidewall spacers in combination with the LDD regions to deepen the trenches formed within the semiconductor material.

Abstract translation: 用于改进蚀刻控制的半导体工艺，其中使用各向异性选择性蚀刻来更好地控制形成在半导体材料内的沟槽的形状和深度。 蚀刻剂沿着至少一个结晶方向表现出优先蚀刻，但表现出在第二晶体学方向上慢得多的蚀刻速率。 因此，蚀刻工艺的一个维度是时间控制的，蚀刻工艺的第二维度使用栅叠层的侧壁间隔物进行自对准，并且蚀刻工艺的第三维度固有地受到选择性蚀刻现象的控制 选择性蚀刻沿着第二个晶体方向。 通过首先在栅极堆叠下方形成轻掺杂漏极（LDD）区域并且使用与LDD区域组合的侧壁间隔物来加深形成在半导体材料内的沟槽来实现更深的沟槽。

公开(公告)号：US07789918B2

公开(公告)日：2010-09-07

申请号：US11547458

申请日：2004-08-09

Applicant: Deepak Kumar Tuli ,  Ajay Kumar Arora ,  Shanti Prakash ,  Rajiv Ranjan ,  Krishan Kumar Swami ,  Ajay Kumar ,  Rakesh Sarin ,  Ram Prakash Verma ,  Niranjan Raghunath Raje

Inventor： Deepak Kumar Tuli ,  Ajay Kumar Arora ,  Shanti Prakash ,  Rajiv Ranjan ,  Krishan Kumar Swami ,  Ajay Kumar ,  Rakesh Sarin ,  Ram Prakash Verma ,  Niranjan Raghunath Raje

IPC: C10L1/18 ,  C10L1/32 ,  C10M169/04

CPC classification number: C10L10/08 ,  C10L1/18 ,  C10L1/1881 ,  C10L1/19 ,  C10L1/191

Abstract: The present invention relates to a additive composition for use as lubricity improver for low sulphur diesel, comprising c) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid (CNSL esters) of formula (I); f) 0.1-10% by weight of ester derivative derived from cashew nut shell liquid of formula (II); g) 50-95% by weight of free fatty acid of the formula RCOOH in which R represents an alkyl/alkenyl group with 12 to 24 carbon atoms. h) 1-30% by weight of synthetic esters derived by esterifying tri, tetra, penta hydric alcohols with carboxylic acids such as lauric, palmitic, linoleic, ricinoleic etc.

Abstract translation: 本发明涉及一种用作低硫柴油的润滑改进剂的添加剂组合物，其包含c）0.1-10重量％衍生自式（I）的腰果壳液（CNSL酯）的酯衍生物; f）0.1-10重量％衍生自式（II）的腰果壳液的酯衍生物; g）50-95重量％的式RCOOH的游离脂肪酸，其中R表示具有12至24个碳原子的烷基/链烯基。 h）1-30重量％的通过酯化三，四，五羟基醇与羧酸如月桂酸，棕榈酸，亚油酸，蓖麻油酸等衍生的合成酯。

公开(公告)号：US20090304275A1

公开(公告)日：2009-12-10

申请号：US12132615

申请日：2008-06-04

Applicant: Vijay Kumar Kodavalla ,  Deepak Kumar Aravapalli

Inventor： Vijay Kumar Kodavalla ,  Deepak Kumar Aravapalli

IPC: G06K9/00

CPC classification number: H04N9/68 ,  G06T5/009 ,  G06T5/40 ,  G06T5/50 ,  G06T2207/10016 ,  G06T2207/10024

Abstract: A method and apparatus for dynamically, adaptively and/or concurrently enhancing and diminishing of colors in digital video images is disclosed. In one embodiment, a method includes dynamically computing a saturation gain, adaptive to slow or fast moving image sequences, for each user chosen color of a substantially current video frame, dynamically computing a saturation dependent value gains, adaptive to slow or fast moving image sequences, for each user chosen color of the substantially current video frame, determining which of the dynamically computed saturation gain and a saturation dependent value gains associated with each user chosen color or no gain is to be applied on a per-pixel basis by comparing Hue, saturation and value (HSV) components of each pixel with predefined HSV ranges of various user chosen colors, respectively, and applying the determined saturation and/or saturation dependent value gain on the per-pixel basis, in the substantially current or next video frame.

Abstract translation: 公开了用于动态，自适应地和/或同时增强和减少数字视频图像中的颜色的方法和装置。 在一个实施例中，一种方法包括动态地计算针对基本上当前视频帧的每个用户选择的颜色的适应于慢或快速运动图像序列的饱和度增益，动态地计算适应慢或快速运动图像序列的饱和度依赖值增益 对于每个用户选择的基本当前视频帧的颜色，通过比较色相，确定每个像素基础上应用动态计算的饱和度增益和与每个用户选择的颜色相关联的饱和度依赖值增益或无增益， 每个像素的饱和度和值（HSV）分量分别具有各种用户选择的颜色的预定义HSV范围，并且在基本上当前的或下一个视频帧中在每像素的基础上应用所确定的饱和度和/或饱和度依赖值增益。

公开(公告)号：US20090196475A1

公开(公告)日：2009-08-06

申请号：US12362985

申请日：2009-01-30

Applicant: Ramazan Demirli ,  Deepak Kumar Gaddipati

Inventor： Ramazan Demirli ,  Deepak Kumar Gaddipati

IPC: G06K9/00

CPC classification number: G06K9/00281 ,  A61B5/441 ,  G06K9/00234 ,  G06K9/6206

Abstract: Methods and systems for automatically generating a mask delineating a region of interest (ROI) within an image containing skin are disclosed. The image may be of an anatomical area containing skin, such as the face, neck, chest, shoulders, arms or hands, among others, or may be of portions of such areas, such as the cheek, forehead, or nose, among others. The mask that is generated is based on the locations of anatomical features or landmarks in the image, such as the eyes, nose, eyebrows and lips, which can vary from subject to subject and image to image. As such, masks can be adapted to individual subjects and to different images of the same subjects, while delineating anatomically standardized ROIs, thereby facilitating standardized, reproducible skin analysis over multiple subjects and/or over multiple images of each subject. Moreover, the masks can be limited to skin regions that include uniformly illuminated portions of skin while excluding skin regions in shadow or hot-spot areas that would otherwise provide erroneous feature analysis results. Methods and systems are also disclosed for automatically registering a skin mask delineating a skin ROI in a first image captured in one imaging modality (e.g., standard white light, UV light, polarized light, multi-spectral absorption or fluorescence imaging, etc.) onto a second image of the ROI captured in the same or another imaging modality. Such registration can be done using linear as well as non-linear spatial transformation techniques.

Abstract translation: 公开了用于自动生成描绘包含皮肤的图像内的感兴趣区域（ROI）的掩模的方法和系统。 该图像可以是包含皮肤的解剖区域，例如面部，颈部，胸部，肩部，手臂或手等，或者可以是诸如脸颊，额头或鼻子等部分的区域 。 生成的面具是基于图像中的解剖特征或地标的位置，例如眼睛，鼻子，眉毛和嘴唇，其可以从主体到主体和图像到图像而变化。 因此，在描绘解剖学上标准化的ROI的同时，掩模可以适应于个体主体和相同主体的不同图像，从而促进在多个对象和/或多个图像上的标准化，可再现的皮肤分析。 此外，面罩可以限于包括皮肤均匀照射部分的皮肤区域，同时排除阴影或热点区域中的皮肤区域，否则会提供错误的特征分析结果。 还公开了用于自动登记在一种成像模式（例如，标准白光，紫外光，偏振光，多光谱吸收或荧光成像等）捕获的第一图像中描绘皮肤ROI的皮肤掩模的方法和系统， 在相同或另一成像模式中捕获的ROI的第二图像。 这种注册可以使用线性和非线性空间变换技术来完成。

公开(公告)号：US07566550B2

公开(公告)日：2009-07-28

申请号：US10687402

申请日：2003-10-16

Applicant: Jaya Sivaswami Tyagi ,  Deepak Kumar Saini

Inventor： Jaya Sivaswami Tyagi ,  Deepak Kumar Saini

IPC: C12Q1/48

CPC classification number: C12Q1/18 ,  A61K45/06 ,  C12Q1/485 ,  G01N33/6893 ,  G01N2500/00

Abstract: The present invention relates to a package of screening methods for developing drugs against pathogenic microbes having two-component system of DevR-DevS and/or DevR-Rv2027c and its homologues, said method comprising steps of over-expressing DevR, DevS, and Rv2027c and their single domain derivatives including mutant variant proteins, autophosphorylating DevS, and Rv2027c proteins and thereafter, phosphotransfering to DevR and its derivatives in SDS-PAGE or High-throughput format in the presence of a test compound, and determining the drug-potential of the test compound, wherein the potential of the drug is inversely proportional to (i) the degree of autophosphorylation of DevS and Rv2027c, (ii). the degree of phosphotransfer-based dephosphorylation of DevR and/its single domain derivative, and (iii). the degree of dephosphorylation of phosphorylated species of DevS and Rv2027c and/their single domain derivatives, and a method of treatment, and a composition thereof.

Abstract translation: 本发明涉及一种用于开发具有DevR-DevS和/或DevR-Rv2027c及其同源物的双组分系统的致病微生物药物的筛选方法的包装，所述方法包括过表达DevR，DevS和Rv2027c的步骤，以及 其单结构域衍生物包括突变体变体蛋白，自磷酸化DevS和Rv2027c蛋白，此后，在测试化合物存在下以SDS-PAGE或高通量形式磷酸转移至DevR及其衍生物，并测定试验的药物 - 电位 化合物，其中药物的潜力与（i）DevS和Rv2027c的自磷酸化程度成反比（ii）。 DevR和/或其单结构域衍生物的磷酸转移脱磷酸化程度，和（iii）。 DevS和Rv2027c及其单结构域衍生物的磷酸化物质的脱磷酸化程度及其处理方法及其组合物。

公开(公告)号：US07437441B1

公开(公告)日：2008-10-14

申请号：US10376426

申请日：2003-02-28

Applicant: Daniel N. J. Drew ,  David C. James ,  Gopal Parupudi ,  Kenneth Mark Osborne ,  Michael J. Healy ,  Deepak Kumar

Inventor： Daniel N. J. Drew ,  David C. James ,  Gopal Parupudi ,  Kenneth Mark Osborne ,  Michael J. Healy ,  Deepak Kumar

IPC: G06F15/173

CPC classification number: H04L41/0893 ,  H04L41/082 ,  H04L63/20

Abstract: The present disclosure relates to mapping, tracking, and distributing policy to client devices. Policy, in particular lists of policy assignments are sent to client devices. A determination is made as to the changes or deltas between policy assignments that have been sent to client devices and policy assignments that must be sent to client devices. Identifying the delta policy assignments avoids the need be sent to client devices. Identifying the delta policy assignments avoids the need to send policy assignments that have not change and do not need to be sent to client devices. A server computer determines applicability of policy assignments to particular client devices, tracks if and when policy assignments have been deleted and allows the client to either receive a partial list of policy assignments that are required to update policy or a full list of policy assignments. Full, partial or not list policy assignment depends when a particular client device was last provided a policy assignment.

Abstract translation: 本公开涉及映射，跟踪和分发策略到客户端设备。 策略，特别是政策分配列表将发送到客户端设备。 确定已经发送到客户端设备的策略分配和必须发送到客户端设备的策略分配之间的更改或增量。 识别增量策略分配避免了将需要发送到客户端设备。 识别增量策略分配避免了发送没有更改的策略分配，而不需要发送到客户端设备的需要。 服务器计算机确定特定客户端设备的策略分配的适用性，跟踪策略分配是否被删除以及是否允许客户端接收更新策略或完整策略分配列表所需的策略分配的部分列表。 完整，部分或不完整的策略分配取决于特定客户端设备上次提供策略分配。

公开(公告)号：US07429526B1

公开(公告)日：2008-09-30

申请号：US11484193

申请日：2006-07-11

Applicant: Deepak Kumar Nayak ,  Yuhao Luo

Inventor： Deepak Kumar Nayak ,  Yuhao Luo

IPC: H01L21/3205

CPC classification number: H01L21/32053 ,  H01L21/28097 ,  H01L29/4975 ,  H01L29/66507 ,  H01L29/6659 ,  H01L29/7833

Abstract: A field-effect transistor (“FET”) or similar device has a fully silicided (“FUSI”) gate electrode. The gate electrode has a gate interface silicide portion between the gate dielectric and a bulk gate silicide portion. The gate interface silicide is formed by depositing a gate electrode interface layer having silicide retardation species underneath the metal/silicon layers used to form the gate silicide. The gate electrode interface layer retards silicide formation at the gate dielectric/gate electrode interface when the bulk gate silicide is formed, and the gate interface silicide is then formed at a higher temperature or longer heat cycle time.

Abstract translation: 场效应晶体管（“FET”）或类似器件具有完全硅化（“FUSI”）栅电极。 栅电极在栅极电介质和体栅极硅化物部分之间具有栅极界面硅化物部分。 栅极界面硅化物通过在用于形成栅极硅化物的金属/硅层之下沉积具有硅化物延迟物质的栅电极界面层而形成。 当形成体栅极硅化物时，栅极电极界面层在栅极电介质/栅极电极界面处阻止硅化物形成，然后在较高温度或更长的热循环时间形成栅极界面硅化物。

公开(公告)号：US07423283B1

公开(公告)日：2008-09-09

申请号：US11146640

申请日：2005-06-07

Applicant: Yuhao Luo ,  Deepak Kumar Nayak

Inventor： Yuhao Luo ,  Deepak Kumar Nayak

IPC: H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L21/823807 ,  H01L21/31105 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

Abstract: Recesses are formed in the drain and source regions of an MOS transistor. An ohmic contact layer is formed in the recesses, and a stressed silicon-nitride layer is formed over the ohmic contact layer. The recesses allow the stressed silicon nitride layer to provide strain in the plane of the channel region. In a particular embodiment, a tensile silicon nitride layer is formed over recesses of an NMOS transistor in a CMOS cell, and a compressive silicon nitride layer is formed over recesses of a PMOS transistor in the CMOS cell. In a particular embodiment the stressed silicon nitride layer(s) is a chemical etch stop layer.

Abstract translation: 凹槽形成在MOS晶体管的漏极和源极区域中。 在凹部中形成欧姆接触层，在欧姆接触层上形成应力氮化硅层。 凹槽允许应力氮化硅层在通道区域的平面中提供应变。 在特定实施例中，在CMOS单元中的NMOS晶体管的凹槽上形成拉伸氮化硅层，并且在CMOS单元中的PMOS晶体管的凹槽上形成压缩氮化硅层。 在特定实施例中，应力氮化硅层是化学蚀刻停止层。

公开(公告)号：US06548459B2

公开(公告)日：2003-04-15

申请号：US10113285

申请日：2002-04-02

Applicant: Pankaj Kumar Mondal ,  Khem Chand Dohhen ,  Rakesh Sarin ,  Deepak Kumar Tuli ,  Niranjan Raghunath Raje ,  Akhilesh Kumar Bhatnagar

Inventor： Pankaj Kumar Mondal ,  Khem Chand Dohhen ,  Rakesh Sarin ,  Deepak Kumar Tuli ,  Niranjan Raghunath Raje ,  Akhilesh Kumar Bhatnagar

IPC: C10M12900

CPC classification number: C10M141/08 ,  C10M129/44 ,  C10M2207/128 ,  C10M2219/022 ,  C10N2220/10 ,  C10N2230/12 ,  C10N2260/02

Abstract: A process for the preparation of CNSL phenoxy carboxylic acid derivatives for use as an additive in a lubricant composition so as to impart improved rust inhibiting properties, including the steps of (a) partially hydrogenating distilled technical cashew nut shell liquid with palladium or nickel or platinum catalyst; to hydrogenate the olefinic chain; (b) reacting cashew nut shell liquid or partially hydrogenated technical cashew nut shell liquid with halogeno carboxylic acid derivatives to obtain unpolymerized cashew nut shell liquid phenoxy carboxylic acid derivatives, the reaction being carried out at a temperature ranging from 20 to 140° C. A lubricant containing a major proportion of a material selected from the group consisting of an oil of lubricating viscosity and a grease; and remainder an additive including CNSL phenoxy carboxylic acid derivative prepared by the foregoing process.

Abstract translation: 一种制备用于润滑剂组合物中的添加剂的CNSL苯氧基羧酸衍生物的方法，以提供改善的防锈性能，包括以下步骤：（a）用钯或镍或铂部分氢化蒸馏的技术腰果壳液体 催化剂; 氢化烯烃链; （b）使腰果壳液体或部分氢化的技术腰果壳液与卤代羧酸衍生物反应，得到未聚合的腰果壳液体苯氧基羧酸衍生物，反应在20-140℃的温度下进行。 含有大部分选自润滑粘度的油和润滑脂的材料的润滑剂; 其余为包括通过上述方法制备的CNSL苯氧基羧酸衍生物的添加剂。