公开(公告)号：US07247466B2

公开(公告)日：2007-07-24

申请号：US10506152

申请日：2003-02-28

申请人： Hajime Ikeda ,  Yoshiyuki Yonetani ,  Shin-ichi Hashimoto ,  Makoto Yagasaki ,  Kenji Soda

发明人： Hajime Ikeda ,  Yoshiyuki Yonetani ,  Shin-ichi Hashimoto ,  Makoto Yagasaki ,  Kenji Soda

IPC分类号： C07H21/04 ,  C12N9/90 ,  C12N15/74 ,  C12N1/21 ,  C12P21/06

CPC分类号： C12P13/04 ,  C12N9/90

摘要： The present invention provides a protein having low-substrate-specific amino acid racemase activity; DNA encoding the protein; a recombinant DNA comprising the DNA; a transformant carrying the recombinant DNA; a process for producing the protein by using the transformant; and a process for producing a racemic amino acid which comprises allowing a culture of the transformant or a treated matter thereof as an enzyme source and an amino acid to be present in an aqueous medium to racemize the amino acid in the aqueous medium, and recovering the racemic amino acid from the aqueous medium.

摘要翻译： 本发明提供了具有低底物特异性氨基酸消旋酶活性的蛋白质; 编码蛋白质的DNA; 包含DNA的重组DNA; 携带重组DNA的转化体; 通过使用转化体生产蛋白质的方法; 以及制备外消旋氨基酸的方法，其包括使转化体或其处理物质的培养物作为酶源，并且氨基酸存在于水性介质中以使水性介质中的氨基酸外消旋化，并回收 来自水介质的外消旋氨基酸。

公开(公告)号：US20060113635A1

公开(公告)日：2006-06-01

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L21/20 ,  H01L31/117

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US20050287627A1

公开(公告)日：2005-12-29

申请号：US11165226

申请日：2005-06-24

申请人： Shin-ichi Hashimoto ,  Hajime Ikeda ,  Makoto Yagasaki

发明人： Shin-ichi Hashimoto ,  Hajime Ikeda ,  Makoto Yagasaki

IPC分类号： A61K38/04 ,  C07K5/06 ,  C07K14/34 ,  C12N9/00 ,  C12N9/12 ,  C12P21/02 ,  C12P21/06

CPC分类号： C12N9/93 ,  C07K5/06 ,  C07K14/34 ,  C12N9/1229 ,  C12P21/02

摘要： The present invention provides a process for producing a dipeptide or a dipeptide derivative using a phosphate donor, a substance selected from the group consisting of adenosine-5′-monophosphate, adenosine-5′-diphosphate and adenosine-5′-triphosphate, one or more kinds of amino acids or amino acid derivatives, and as enzyme sources, a protein having polyphosphate kinase activity, or a culture of cells having the ability to produce the protein or a treated matter of the culture, and a protein having the activity to ATP-dependently form the dipeptide or dipeptide derivative from one or more kinds of amino acids or amino acid derivatives, or a culture of cells having the ability to produce the protein or a treated matter of the culture.

摘要翻译： 本发明提供了使用磷酸盐供体，选自腺苷-5'-磷酸，腺苷-5'-二磷酸和腺苷-5'-三磷酸的物质制备二肽或二肽衍生物的方法，其中一种或 更多种类的氨基酸或氨基酸衍生物，作为酶源，具有多磷酸激酶活性的蛋白质，或具有产生蛋白质的能力的细胞培养物或培养物的处理物质，以及具有ATP活性的蛋白质 依赖性地形成来自一种或多种氨基酸或氨基酸衍生物的二肽或二肽衍生物，或具有产生蛋白质的能力的细胞培养物或培养物的处理物质。

公开(公告)号：US06567145B1

公开(公告)日：2003-05-20

申请号：US09535751

申请日：2000-03-27

申请人： Toshiki Kaneko ,  Kikuo Ono ,  Hajime Ikeda ,  Masatomo Terakado

发明人： Toshiki Kaneko ,  Kikuo Ono ,  Hajime Ikeda ,  Masatomo Terakado

IPC分类号： G02F11343

CPC分类号： G02F1/13458 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1362

摘要： The present invention provides a liquid crystal display device which can simplify patterning steps of signal wirings and electrodes during manufacture and can enhance the reliability by preventing the electrolytic corrosion of terminal portions or the like. At the time of forming electrodes and/or signal wirings on a substrate 1, an amorphous oxide conductive film 3 having a large etching rate is laminated onto a metal film 2 which is made of chromium or the like and is formed on the substrate 1, and these films arc etched simultaneously in only one photolithography treatment.

摘要翻译： 本发明提供一种液晶显示装置，其可以简化制造期间的信号布线和电极的图案化步骤，并且可以通过防止端子部分等的电解腐蚀来提高可靠性。 在基板1上形成电极和/或信号布线时，将蚀刻速率大的非晶氧化物导电膜3层叠在由铬等制成并形成在基板1上的金属膜2上， 并且这些膜仅在一个光刻处理中同时蚀刻。

公开(公告)号：US08643932B2

公开(公告)日：2014-02-04

申请号：US12170544

申请日：2008-07-10

申请人： Hajime Ikeda

发明人： Hajime Ikeda

IPC分类号： G02F1/153 ,  G09G3/19

CPC分类号： G09G3/38 ,  G02F1/0121 ,  G02F1/19 ,  G02F2203/34 ,  G09G2300/06 ,  G09G2300/08 ,  G09G2300/0809

摘要： A reflection type display apparatus includes an image display having a plurality of pixels, with each of the pixels including a first electrode having a light transmitting property, a second electrode disposed in opposition to the first electrode, and a third electrode disposed in opposition to the first or second electrode. An electrolytic solution containing a metal ion is disposed in contact with the first, second and third electrodes, and a control unit sets a direction of a current flowing between the first, second and third electrodes. The control unit sets a first state of forming a first electroplating of a first color on the first electrode using the first electrode as a negative electrode and using the second electrode as a positive electrode, a second state of forming a second electroplating of a second color on the second electrode using the second electrode as the negative electrode and using the first electrode as the positive electrode without forming the first electroplating, and a third state of forming a third electroplating of a third color on the third electrode using the third electrode as the negative electrode and using the first and second electrodes as the positive electrodes without forming the first and second electroplatings.

摘要翻译： 反射型显示装置包括具有多个像素的图像显示器，每个像素包括具有透光性的第一电极，与第一电极相对设置的第二电极和与第一电极相对设置的第三电极 第一或第二电极。 含有金属离子的电解液被设置成与第一，第二和第三电极接触，并且控制单元设定在第一，第二和第三电极之间流动的电流的方向。 控制单元使用第一电极作为负极设置在第一电极上形成第一颜色的第一电镀的第一状态，并且使用第二电极作为正电极，形成第二颜色的第二电镀的第二状态 在第二电极上使用第二电极作为负电极，并且使用第一电极作为正电极而不形成第一电镀;以及第三状态，使用第三电极作为第三电极在第三电极上形成第三颜色的第三电镀 并且使用第一和第二电极作为正电极而不形成第一和第二电镀。

公开(公告)号：US20120258490A1

公开(公告)日：2012-10-11

申请号：US13430937

申请日：2012-03-27

申请人： Shin-ichi Hashimoto ,  Hajime Ikeda ,  Makoto Yagasaki

发明人： Shin-ichi Hashimoto ,  Hajime Ikeda ,  Makoto Yagasaki

IPC分类号： C12P21/02 ,  C12P21/06

CPC分类号： C12N9/93 ,  C07K5/06 ,  C07K14/34 ,  C12N9/1229 ,  C12P21/02

摘要： The present invention provides a process for producing a dipeptide or a dipeptide derivative using a phosphate donor, a substance selected from the group consisting of adenosine-5′-monophosphate, adenosine-5′-diphosphate and adenosine-5′-triphosphate, one or more kinds of amino acids or amino acid derivatives, and as enzyme sources, a protein having polyphosphate kinase activity, or a culture of cells having the ability to produce the protein or a treated matter of the culture, and a protein having the activity to ATP-dependently form the dipeptide or dipeptide derivative from one or more kinds of amino acids or amino acid derivatives, or a culture of cells having the ability to produce the protein or a treated matter of the culture.

摘要翻译： 本发明提供了使用磷酸盐供体，选自腺苷-5'-磷酸，腺苷-5'-二磷酸和腺苷-5'-三磷酸的物质制备二肽或二肽衍生物的方法，其中一种或 更多种类的氨基酸或氨基酸衍生物，作为酶源，具有多磷酸激酶活性的蛋白质，或具有产生蛋白质的能力的细胞培养物或培养物的处理物质，以及具有ATP活性的蛋白质 依赖性地形成来自一种或多种氨基酸或氨基酸衍生物的二肽或二肽衍生物，或具有产生蛋白质的能力的细胞培养物或培养物的处理物质。

公开(公告)号：US08242052B2

公开(公告)日：2012-08-14

申请号：US12562957

申请日：2009-09-18

申请人： Hajime Ikeda ,  Atsushi Iwata

发明人： Hajime Ikeda ,  Atsushi Iwata

IPC分类号： A01N25/26

CPC分类号： A01N43/78 ,  A01N43/54 ,  A01N43/653 ,  A01N43/84 ,  A01N51/00 ,  A01N33/22 ,  A01N2300/00

摘要： A method for controlling noxious organisms in a field of soybean or corn, comprising the steps of: treating soybean or corn seeds with at least one neonicotinoid compound selected from the group consisting of clothianidin, thiamethoxam, imidacloprid, dinotefuran, nitenpyram, acetamiprid, and thiacloprid, and treating the field with at least one PPO inhibitor compound selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen, and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2,4-(1H,3H)pyrimidinedione before or after the soybean or corn seeds treated with the neonicotinoid compound are sown in the field.

摘要翻译： 一种用于控制大豆或玉米领域的有害生物的方法，包括以下步骤：用至少一种新烟碱类化合物处理大豆或玉米种子，所述新烟碱类化合物选自噻虫胺，噻虫嗪，吡虫啉，二硝基呋喃，硝苯吡啶，啶虫脒和噻虫啉 ，并用至少一种选自氟马嗪，磺胺腙，香草氟苯，氟氟芬和3-（4-氯-6-氟-2-三氟甲基苯并咪唑-7-基）-1-甲基的PPO抑制剂化合物处理该领域 6-三氟甲基-2,4-（1H，3H）嘧啶二酮在用新烟碱类化合物处理的大豆或玉米种子之前或之后播种。

公开(公告)号：US08111442B2

公开(公告)日：2012-02-07

申请号：US12969649

申请日：2010-12-16

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02F1/03 ,  G09G3/38 ,  B28B7/36

CPC分类号： G02F1/1506

摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.

摘要翻译： 在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。 该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

公开(公告)号：US07750367B2

公开(公告)日：2010-07-06

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US07642179B2

公开(公告)日：2010-01-05

申请号：US11199597

申请日：2005-08-08

申请人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

发明人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/30635

摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。