公开(公告)号：US20110085228A1

公开(公告)日：2011-04-14

申请号：US12969649

申请日：2010-12-16

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02B26/00

CPC分类号： G02F1/1506

摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.

摘要翻译： 在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。 该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

公开(公告)号：US08111442B2

公开(公告)日：2012-02-07

申请号：US12969649

申请日：2010-12-16

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02F1/03 ,  G09G3/38 ,  B28B7/36

CPC分类号： G02F1/1506

摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.

摘要翻译： 在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。 该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

公开(公告)号：US07876490B2

公开(公告)日：2011-01-25

申请号：US12500288

申请日：2009-07-09

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02F1/03 ,  G09G3/38 ,  B28B7/36

CPC分类号： G02F1/1506

摘要： A reflection type display apparatus using an electroplating for modulating light includes a first electrode, a second electrode, and an electrolyte solution arranged between the first and second electrodes. A first electroplating is formed from the electrolyte solution onto the first electrode by setting a first direction of current flowing between the first and second electrodes, and a second electroplating is formed from the electrolyte solution onto the second electrode by setting a second direction of current flowing between the first and second electrodes. A first surface of the first electroplating is formed on the first electrode such that the first electroplating contacts the first electrode through the first surface and is different in at least one of a light reflectance and a light absorptance from a second surface of the second electroplating formed on the second electrode such that the second electroplating does not contact the second electrode through the second surface. Displaying is performed by a reflection light from the first surface in case that the first electroplating is formed on the first electrode, while a displaying is performed by a reflection light from the second surface in case that the second electroplating is formed on the second electrode.

摘要翻译： 使用用于调制光的电镀的反射型显示装置包括第一电极，第二电极和布置在第一和第二电极之间的电解质溶液。 通过设置在第一和第二电极之间流动的电流的第一方向，通过设置电流流过第二电流方向的电解液将电解液形成第一电镀到第一电极上。 在第一和第二电极之间。 第一电镀的第一表面形成在第一电极上，使得第一电镀通过第一表面接触第一电极，并且在形成的第二电镀的第二表面的光反射率和光吸收率中的至少一个方面不同 在第二电极上使得第二电镀不通过第二表面接触第二电极。 在第一电镀形成在第一电极上的情况下，来自第一表面的反射光进行显示，而在第二电极上形成第二电镀的情况下，来自第二表面的反射光进行显示。

公开(公告)号：US20100020386A1

公开(公告)日：2010-01-28

申请号：US12500288

申请日：2009-07-09

申请人： Hajime Ikeda ,  Makoto Higashikawa

发明人： Hajime Ikeda ,  Makoto Higashikawa

IPC分类号： G02F1/19

CPC分类号： G02F1/1506

摘要： A reflection type display apparatus wherein an electroplating is used to modulate light, at least one of a reflectance and an absorptance of a first surface, which contacts the first electrode, of an electroplating film 10 formed on the first electrode 2 and that of a second surface, which does not contact the second electrode, of the electroplating film 10 formed on the second electrode 4 are different. When the electroplating film 10 is formed on the first electrode 2, reflection light from the first surface is used for displaying. When the electroplating film 10 is formed on the second electrode 4, reflection light from the second surface is used for displaying.

摘要翻译： 一种反射型显示装置，其中使用电镀来调制光，形成在第一电极2上的电镀膜10的第一表面的接触第一电极的第一表面的反射率和吸收率中的至少一个， 形成在第二电极4上的电镀膜10不接触第二电极的表面是不同的。 当电镀膜10形成在第一电极2上时，来自第一表面的反射光被用于显示。 当电镀膜10形成在第二电极4上时，来自第二表面的反射光被用于显示。

公开(公告)号：US06252158B1

公开(公告)日：2001-06-26

申请号：US09333002

申请日：1999-06-15

申请人： Makoto Higashikawa

发明人： Makoto Higashikawa

IPC分类号： H01L3100

CPC分类号： H01L31/0725 ,  Y02E10/50

摘要： A photovoltaic element has a first conduction type semiconductor layer 103 of the n+-type or the p+-type, an intrinsic semiconductor layer 108 of the i-type, and a second conduction type semiconductor layer 105 of the p+-type or the n+-type successively stacked on a substrate 101. When a unit 107 is defined as a set of a first microcrystal silicon base semiconductor layer 103 and a second microcrystal silicon base semiconductor layer 104 of mutually different absorption coefficients at 800 nm, the i-type layer 108 includes at least two such units. This makes it possible to provide the photovoltaic element that can absorb the light efficiently with avoiding the light degradation phenomenon (Staebler-Wronski effect) specific to amorphous semiconductors and that has good electric characteristics (mobility &mgr;, lifetime &tgr;) and the like.

摘要翻译： 光电元件具有n +型或p +型的第一导电型半导体层103，i型的本征半导体层108和p +型或n +型的第二导电型半导体层105。 当单元107被定义为在800nm处具有相互不同的吸收系数的第一微晶硅基底半导体层103和第二微晶硅基底半导体层104的集合时，i型层108 包括至少两个这样的单元。 这使得可以提供能够有效地吸收光的光电元件，同时避免特定于非晶半导体的光劣化现象（Staebler-Wronski效应）并且具有良好的电特性（迁移率μ，寿命）等。

公开(公告)号：US07897868B2

公开(公告)日：2011-03-01

申请号：US10807103

申请日：2004-03-24

申请人： Koichi Matsuda ,  Makoto Higashikawa ,  Tetsuro Nakamura

发明人： Koichi Matsuda ,  Makoto Higashikawa ,  Tetsuro Nakamura

IPC分类号： H01L31/0392 ,  H01L31/0376

CPC分类号： H01L31/0687 ,  H01L31/046 ,  H01L31/0549 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photovoltaic element comprising a plurality of unit photovoltaic elements each composed of a pn- or pin-junction, connected to each other in series, wherein a zinc oxide layer is provided at least one position between the unit photovoltaic elements, and the zinc oxide layer has resitivity varying in the thickness direction.

摘要翻译： 一种堆叠的光伏元件，包括多个单元光电元件，每个单元光伏元件各自由pn或pin-junction组成，彼此串联连接，其中氧化锌层设置在单元光电元件和氧化锌之间的至少一个位置 层具有在厚度方向上变化的电位。

公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US5981934A

公开(公告)日：1999-11-09

申请号：US925751

申请日：1997-09-09

申请人： Makoto Higashikawa

发明人： Makoto Higashikawa

IPC分类号： H01L31/0236 ,  H01L31/052 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01J40/14

CPC分类号： H01L31/0236 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： This invention is to provide a photovoltaic element capable of improving the production yield in the manufacturing process and the reliability such as the weather resistance and the durability, while also improving the photoelectric conversion efficiency by the light enclosing effect. For attaining such object, the photovoltaic element is featured by a fact that the transparent conductive layer, positioned between the substrate and the semiconductor layers, is provided, at a face in contact with the semiconductor layers, with a fractal structure of a fractal dimension D within a range of 1.01.ltoreq.D.ltoreq.1.20 at least within a dimensional range from 40 to 400 nm.

摘要翻译： 本发明提供能够提高制造工序中的制造成品率和耐候性，耐久性等可靠性的光电元件，同时通过光封闭效果提高光电转换效率。 为了实现上述目的，光电元件的特征在于，位于基板和半导体层之间的透明导电层在与半导体层接触的面上具有分形维数D的分形结构 至少在40至400nm的尺寸范围内，在1.01≤D≤1.020的范围内。

公开(公告)号：US08450139B2

公开(公告)日：2013-05-28

申请号：US13318259

申请日：2010-04-28

申请人： Yasuaki Ishikawa ,  Shinya Honda ,  Makoto Higashikawa

发明人： Yasuaki Ishikawa ,  Shinya Honda ,  Makoto Higashikawa

IPC分类号： H01L31/18

CPC分类号： H01L31/204 ,  C23C16/22 ,  C23C16/515 ,  H01L31/1812 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.

摘要翻译： 一种制造光电转换装置的方法，包括通过等离子体CVD法形成半导体膜。 半导体膜是SiGe系化合物的非晶质膜或SiGe系化合物的微晶膜。 等离子体CVD通过改变施加的电力的接通或关闭时间来产生等离子体并间歇地供电来控制半导体膜的厚度方向上的带隙。 功率的ON时间和OFF时间落在占空比ON时间/（ON时间+ OFF时间）×100（％）为10％以上且50％以下的范围内。

公开(公告)号：US20120052619A1

公开(公告)日：2012-03-01

申请号：US13318259

申请日：2010-04-28

申请人： Yasuaki Ishikawa ,  Shinya Honda ,  Makoto Higashikawa

发明人： Yasuaki Ishikawa ,  Shinya Honda ,  Makoto Higashikawa

IPC分类号： H01L31/18 ,  H01L21/20

CPC分类号： H01L31/204 ,  C23C16/22 ,  C23C16/515 ,  H01L31/1812 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for forming a semiconductor film suitable for a practical photoelectric conversion device having favorable photoelectric conversion efficiency and adapted to volume production and increased substrate area, and a method for manufacturing a photoelectric conversion device including the semiconductor film are provided. The method for forming a semiconductor film manufactures the semiconductor film including amorphous structure by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD method controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.

摘要翻译： 一种形成适合于具有良好的光电转换效率并且适于批量生产和增加的衬底面积的实用光电转换装置的半导体膜的方法，以及一种制造包括该半导体膜的光电转换装置的方法。 形成半导体膜的方法通过等离子体CVD法制造包括非晶结构的半导体膜。 半导体膜是SiGe系化合物的非晶质膜或SiGe系化合物的微晶膜。 等离子体CVD法通过改变施加的电力的导通或截止时间来产生等离子体并间歇地供电，来控制半导体膜的厚度方向的带隙。 功率的ON时间和OFF时间落在占空比ON时间/（ON时间+ OFF时间）×100（％）为10％以上且50％以下的范围内。