公开(公告)号：US07750367B2

公开(公告)日：2010-07-06

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US07642179B2

公开(公告)日：2010-01-05

申请号：US11199597

申请日：2005-08-08

申请人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

发明人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/30635

摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

公开(公告)号：US20070272944A1

公开(公告)日：2007-11-29

申请号：US11711711

申请日：2007-02-28

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L31/00

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US20060035447A1

公开(公告)日：2006-02-16

申请号：US11199597

申请日：2005-08-08

申请人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

发明人： Hajime Ikeda ,  Kazuya Notsu ,  Nobuhiko Sato ,  Shoji Nishida

IPC分类号： H01L21/20 ,  G12B21/02

CPC分类号： H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/3063 ,  H01L21/30635

摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。

公开(公告)号：US20060113635A1

公开(公告)日：2006-06-01

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L21/20 ,  H01L31/117

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US07238973B2

公开(公告)日：2007-07-03

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US20100136869A1

公开(公告)日：2010-06-03

申请号：US12627982

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

摘要翻译： 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US07407547B2

公开(公告)日：2008-08-05

申请号：US11270562

申请日：2005-11-10

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B11/02

CPC分类号： C30B19/068 ,  C30B19/02 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

摘要翻译： 用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。 衬底保持器包括连接器，接收部件和推动部件。 接收部件和推动部件彼此相对并且通过连接器连接。 推动部件保持基板的上部，而接收部件保持基板的下部。 将含有垂直保持的基板的基板保持器浸入溶液中。 接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

公开(公告)号：US07175706B2

公开(公告)日：2007-02-13

申请号：US10505979

申请日：2003-02-21

申请人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： C30B11/14

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

摘要翻译： 提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。 切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

公开(公告)号：US20050066881A1

公开(公告)日：2005-03-31

申请号：US10938509

申请日：2004-09-13

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Hiroshi Sato ,  Shoji Nishida

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： H01L31/182 ,  C30B28/08 ,  C30B28/10 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521 ,  Y10T117/1032 ,  Y10T117/1056

摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.

摘要翻译： 提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状 并且保持在比原料硅的熔点高的温度。 该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。