摘要:
A resist resin containing a monomer unit selected from the group comprising a monomer unit represented by Formula (II): wherein a substituent R3 represents an alkyl group, or a functional group comprising an acid-deprotectable protecting group, m representing the number of R3 is 0 (non-substitution), 1, 2 or more, R3 may be different from each other, provided that m is 2 or more, and n represents an integer of 0 to 4, has no rough spots on the surface after etching and so has good dry etching resistance, and therefore the resist resin is preferably used as a photo resist for DUV.
摘要:
To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.
摘要:
A (meth)acrylate represented by the following formula (1): wherein each of R1, R2, R3 and R4 represents a hydrogen atom, a methyl group or an ethyl group; either one of X1 or X2 represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A1 and A2 represent hydrogen atoms, or A1 and A2 form —O—, —CH2— or —CH2CH2—, which can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol; a polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition.
摘要翻译:由下式(1)表示的(甲基)丙烯酸酯:其中R 1,R 2,R 3和R 0中的每一个 > 4表示氢原子,甲基或乙基; X 1或X 2中的任一个表示(甲基)丙烯酰氧基,另一个表示氢原子; A 1和A 2都代表氢原子,或者A 1和A 2 O 2 - , - O - CH 2 - 或-CH 2 CH 2 - ,其可以通过首先通过还原由Diels获得的加成产物来生产内酯来制备 - 1,3-二烯和马来酸酐之间的反应,然后水合内酯以产生醇,然后进行醇的(甲基)丙烯酸酯化; 通过(共)聚合本发明的(甲基)丙烯酸酯的单体组合物而制造的聚合物的透明性,耐干蚀刻性和在有机溶剂中的溶解性优异,因此优选用作化学增幅抗蚀剂的树脂 组成。
摘要:
A (meth)acrylate represented by the following formula (1): wherein each of R1, R2, R3 and R4 represents a hydrogen atom, a methyl group or an ethyl group; either one of X1 or X2 represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A1 and A2 represent hydrogen atoms, or A1 and A2 form —O—, —CH2— or —CH2CH2—, which can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol; a polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition.
摘要翻译:由下式(1)表示的(甲基)丙烯酸酯:其中R 1,R 2,R 3和R 0中的每一个 > 4表示氢原子,甲基或乙基; X 1或X 2中的任一个表示(甲基)丙烯酰氧基,另一个表示氢原子; A 1和A 2都代表氢原子,或者A 1和A 2 O 2 - , - O - CH 2 - 或-CH 2 CH 2 - ,其可以通过首先通过还原由Diels获得的加成产物来生产内酯来制备 - 1,3-二烯与马来酸酐之间的反应,然后水合内酯以产生醇,然后进行醇的(甲基)丙烯酸酯化; 通过(共)聚合本发明的(甲基)丙烯酸酯的单体组合物而制造的聚合物的透明性,耐干蚀刻性和在有机溶剂中的溶解性优异,因此优选用作化学增幅抗蚀剂的树脂 组成。
摘要:
A target variable analysis unit (11) calculates the triad fractions of monomer units in the composition of a known polymer sample from the copolymerization reactivity ratios of the monomer units to obtain a target variable. A waveform processing unit (12) processes NMR measurements, signals, etc. An explanatory variable analysis unit (13) obtains explanatory variables from the amount of chemical shift and signal strength in the NMR measurements of the known sample. A model generation unit (14) determines the regression equation of the regression model of the target variable and the explanatory variables by partial least squares regression, and obtains regression model coefficients. A sample analysis unit (15) uses the regression model to calculate the triad fractions for an unknown copolymer sample from the amount of chemical shift and signal strength in the NMR measurements of the unknown copolymer sample. By using a copolymer for lithography in which the total of the triad fractions obtained in this way is not more than 20 mole % in the copolymer, a resist composition with excellent solubility and sensitivity can be manufactured.
摘要:
A resist polymer (Y′), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y′): in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.
摘要:
The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
摘要:
A resist polymer (Y′), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by the following formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y′): [Chemical formula 1]in the formula (1), L is a divalent linear, branched, or cyclic C1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R11 is a g-valent linear, branched, or cyclic C 120 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.
摘要翻译:在DUV准分子激光光刻法,电子束光刻法等中用作抗蚀剂树脂的抗蚀剂聚合物(Y')含有聚合物(Y),其包含:具有内酯骨架的构成单元(A) 具有酸可消除基团的构成单元(B) 具有亲水基团的构成单元(C) 和具有由下式(1)表示的结构的构成单元(E),其中,构成单元(E)的含量相对于抗蚀剂聚合物(Y)的构成单位的总数为0.3摩尔%以上 '):式(1)中的[化学式1],L是可以具有取代基和/或杂原子的二价直链,支链或环状C 1-20烃基; R 11是可以具有取代基和/或杂原子的g价线性,支链或环状C 120烃基; g表示1〜24的整数。
摘要:
A 5-methylene-1,3-dioxolan-4-one derivative and a monomer and copolymer thereof and a resist composition containing the polymer or copolymer where the 5-methylene-1,3 -dioxolan-4-one derivative is of formula (1): wherein R1 represents a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms, or a linear or branched alkyl group containing 1 to 6 carbon atoms which has a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms as a substituent; R2 represents a hydrogen atom, or a linear or branched alkyl group containing 1 to 6 carbon atoms; or R1 and R2 represent a bridged cyclic hydrocarbon group containing 4 to 16 carbon atoms together with the carbon atom to which they are bound, provided that the alkyl group and the bridged cyclic hydrocarbon group may have at least one substituent selected from a group consisting of a linear or branched alkyl group containing 1 to 6 carbon atoms which may be optionally substituted, a hydroxy group, a carboxy group, an acyl group containing 2 to 6 carbon atoms, an alkoxy group containing 1 to 6 carbon atoms, and a carboxy group esterified with an alcohol containing 1 to 6 carbon atoms.
摘要:
To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.
摘要翻译:提供一种抗蚀剂聚合物,其包含作为结构单元的具有由式(1)或(2)表示的结构的酸可分解单元,其具有小的线边缘粗糙度,并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式(1)和(2)中,n表示2〜24的整数, 当n = 2时,J表示单键或可以具有取代基/杂原子的二价烃基,或当n> = 3时,表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂,链转移剂或聚合引发剂的残基; K 1和K 2各自表示选自亚烷基,亚环烷基,氧化烯,亚芳基,二价噻唑啉环,二价恶唑啉环和二价咪唑啉环中的至少一种。 L 1和L 2各自表示选自-C(O)O - , - C(O) - 和-OC(O) - 的至少一种。 M 1,M 2和M 3各自表示选自亚烷基,亚环烷基,氧化烯和亚芳基中的至少一种; Y,Y 1和Y 2各自表示酸可分解键; k1,k2,l1,l2,m1,m2,m3和n1各自表示0或1; R 1表示H或甲基。