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    COPOLYMERS FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH PATTERN FORMED THEREUPON, METHOD FOR EVALUATING COPOLYMERS, AND METHOD FOR ANALYZING COPOLYMER COMPOSITIONS
    1.
    发明申请
    COPOLYMERS FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH PATTERN FORMED THEREUPON, METHOD FOR EVALUATING COPOLYMERS, AND METHOD FOR ANALYZING COPOLYMER COMPOSITIONS 有权
    用于制备它的共聚物及其制备方法，耐蚀组合物，用于形成图案的基板的生产方法，用于评价共聚物的方法和分析共聚物组合物的方法

    公开(公告)号：US20130224654A1

    公开(公告)日：2013-08-29

    申请号：US13879737

    申请日：2011-10-14

    申请人： Atsushi Yasuda ,  Tomoya Oshikiri ,  Hikaru Momose

    发明人： Atsushi Yasuda ,  Tomoya Oshikiri ,  Hikaru Momose

    IPC分类号： G03F7/004

    CPC分类号： G03F7/004 ,  C08F2/00 ,  C08F120/28 ,  C08F220/18 ,  C08F220/20 ,  C08F220/28 ,  C08F2220/283 ,  C08F2400/02 ,  G01N24/085 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20

    摘要： A target variable analysis unit (11) calculates the triad fractions of monomer units in the composition of a known polymer sample from the copolymerization reactivity ratios of the monomer units to obtain a target variable. A waveform processing unit (12) processes NMR measurements, signals, etc. An explanatory variable analysis unit (13) obtains explanatory variables from the amount of chemical shift and signal strength in the NMR measurements of the known sample. A model generation unit (14) determines the regression equation of the regression model of the target variable and the explanatory variables by partial least squares regression, and obtains regression model coefficients. A sample analysis unit (15) uses the regression model to calculate the triad fractions for an unknown copolymer sample from the amount of chemical shift and signal strength in the NMR measurements of the unknown copolymer sample. By using a copolymer for lithography in which the total of the triad fractions obtained in this way is not more than 20 mole % in the copolymer, a resist composition with excellent solubility and sensitivity can be manufactured.

    摘要翻译： 目标可变分析单元（11）根据单体单元的共聚反应性比率计算已知聚合物样品的组成中单体单元的三单元组分数，以获得目标变量。 波形处理单元（12）处理NMR测量，信号等。解释变量分析单元（13）从已知样本的NMR测量中的化学位移和信号强度的量中获得解释变量。 模型生成单元（14）通过偏最小二乘回归确定目标变量回归模型的回归方程和解释变量，得到回归模型系数。 样品分析单元（15）使用回归模型从未知共聚物样品的NMR测量中的化学位移和信号强度的量来计算未知共聚物样品的三单元组分数。 通过使用共聚物，其中在共聚物中以这种方式获得的三单元组分数的总和不超过20摩尔％，可以制造出具有优异的溶解度和灵敏度的抗蚀剂组合物。

    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
    3.
    发明申请
    RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER 有权
    耐腐蚀聚合物，耐腐蚀组合物，形成图案的方法和起始化合物用于生产耐候聚合物

    公开(公告)号：US20090198065A1

    公开(公告)日：2009-08-06

    申请号：US12411703

    申请日：2009-03-26

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C07D211/00 ,  C07C69/608 ,  C07C69/74 ,  C07D307/02 ,  C07D309/02 ,  C07D311/78 ,  C07C323/00 ,  C07C69/96

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。

    (Meth)acrylate, raw material alcohol for the (meth)acrylate, method of producing the (meth)acrylate and the alcohol, polymer produced by polymerizing the (meth)acrylate, chemically amplified resist composition, and method of the formation of a pattern
    4.
    发明授权
    (Meth)acrylate, raw material alcohol for the (meth)acrylate, method of producing the (meth)acrylate and the alcohol, polymer produced by polymerizing the (meth)acrylate, chemically amplified resist composition, and method of the formation of a pattern 有权
    （甲基）丙烯酸酯，（甲基）丙烯酸酯的原料醇，（甲基）丙烯酸酯和醇的制造方法，聚合（甲基）丙烯酸酯，化学放大型抗蚀剂组合物，形成图案的方法

    公开(公告)号：US07339014B2

    公开(公告)日：2008-03-04

    申请号：US10974876

    申请日：2004-10-28

    申请人： Yoshihiro Kamon ,  Tadayuki Fujiwara ,  Hideaki Kuwano ,  Hikaru Momose ,  Atsushi Koizumi

    发明人： Yoshihiro Kamon ,  Tadayuki Fujiwara ,  Hideaki Kuwano ,  Hikaru Momose ,  Atsushi Koizumi

    IPC分类号： C08F24/00 ,  C08F34/02

    CPC分类号： G03F7/0397 ,  C07D307/88 ,  C07D307/93 ,  C08F220/18 ,  C08F220/28

    摘要： A (meth)acrylate represented by the following formula (1): wherein each of R1, R2, R3 and R4 represents a hydrogen atom, a methyl group or an ethyl group; either one of X1 or X2 represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A1 and A2 represent hydrogen atoms, or A1 and A2 form —O—, —CH2— or —CH2CH2—, which can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol; a polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition.

    摘要翻译： 由下式（1）表示的（甲基）丙烯酸酯：其中R 1，R 2，R 3和R 0中的每一个 > 4表示氢原子，甲基或乙基; X 1或X 2中的任一个表示（甲基）丙烯酰氧基，另一个表示氢原子; A 1和A 2都代表氢原子，或者A 1和A 2 O 2 - ， - O - CH 2 - 或-CH 2 CH 2 - ，其可以通过首先通过还原由Diels获得的加成产物来生产内酯来制备 - 1,3-二烯和马来酸酐之间的反应，然后水合内酯以产生醇，然后进行醇的（甲基）丙烯酸酯化; 通过（共）聚合本发明的（甲基）丙烯酸酯的单体组合物而制造的聚合物的透明性，耐干蚀刻性和在有机溶剂中的溶解性优异，因此优选用作化学增幅抗蚀剂的树脂 组成。

    (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns
    5.
    发明授权
    (Meth)acrylate esters, starting alcohols for the preparation thereof, processes for preparing both, polymers of the esters, chemically amplifiable resist compositions, and method for forming patterns 有权
    （甲基）丙烯酸酯，其制备原料醇，二者的制备方法，酯的聚合物，化学可放大的抗蚀剂组合物和形成图案的方法

    公开(公告)号：US07041838B2

    公开(公告)日：2006-05-09

    申请号：US10433570

    申请日：2001-12-05

    申请人： Yoshihiro Kamon ,  Tadayuki Fujiwara ,  Hideaki Kuwano ,  Hikaru Momose ,  Atsushi Koizumi

    发明人： Yoshihiro Kamon ,  Tadayuki Fujiwara ,  Hideaki Kuwano ,  Hikaru Momose ,  Atsushi Koizumi

    IPC分类号： C07D407/00

    CPC分类号： G03F7/0397 ,  C07D307/88 ,  C07D307/93 ,  C08F220/18 ,  C08F220/28

    摘要： A (meth)acrylate represented by the following formula (1): wherein each of R1, R2, R3 and R4 represents a hydrogen atom, a methyl group or an ethyl group; either one of X1 or X2 represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A1 and A2 represent hydrogen atoms, or A1 and A2 form —O—, —CH2— or —CH2CH2—, which can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol; a polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition.

    摘要翻译： 由下式（1）表示的（甲基）丙烯酸酯：其中R 1，R 2，R 3和R 0中的每一个 > 4表示氢原子，甲基或乙基; X 1或X 2中的任一个表示（甲基）丙烯酰氧基，另一个表示氢原子; A 1和A 2都代表氢原子，或者A 1和A 2 O 2 - ， - O - CH 2 - 或-CH 2 CH 2 - ，其可以通过首先通过还原由Diels获得的加成产物来生产内酯来制备 - 1,3-二烯与马来酸酐之间的反应，然后水合内酯以产生醇，然后进行醇的（甲基）丙烯酸酯化; 通过（共）聚合本发明的（甲基）丙烯酸酯的单体组合物而制造的聚合物的透明性，耐干蚀刻性和在有机溶剂中的溶解性优异，因此优选用作化学增幅抗蚀剂的树脂 组成。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    6.
    发明授权
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US08241829B2

    公开(公告)日：2012-08-14

    申请号：US10592057

    申请日：2005-03-08

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或表示当n≥3时可具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3和n1各自表示0或1; R1表示H或甲基。

    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer
    9.
    发明授权
    Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer 有权
    抗蚀剂聚合物，抗蚀剂组合物，图案形成方法和用于生产抗蚀剂聚合物的起始化合物

    公开(公告)号：US08614283B2

    公开(公告)日：2013-12-24

    申请号：US13032299

    申请日：2011-02-22

    申请人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    发明人： Hikaru Momose ,  Atsushi Ootake ,  Tadashi Nakamura ,  Akifumi Ueda

    IPC分类号： C08F22/14 ,  C08F22/20 ,  C08F220/68 ,  C08F220/18 ,  C08F220/28

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F222/1006

    摘要： To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R1 represents H or a methyl group.

    摘要翻译： 提供一种抗蚀剂聚合物，其包含作为结构单元的具有由式（1）或（2）表示的结构的酸可分解单元，其具有小的线边缘粗糙度，并且在DUV准分子激光光刻技术中几乎没有缺陷。 在式（1）和（2）中，n表示2〜24的整数， 当n = 2时，J表示单键或可以具有取代基/杂原子的二价烃基，或当n> = 3时，表示可以具有取代基/杂原子的n价烃基; E表示聚合终止剂，链转移剂或聚合引发剂的残基; K1和K2各自表示选自亚烷基，亚环烷基，氧化烯，亚芳基，二价噻唑啉环，二价恶唑啉环和二价咪唑啉环中的至少一种。 L1和L2各自表示选自-C（O）O - ， - C（O） - 和-OC（O） - 的至少一种; M1，M2和M3各自表示选自亚烷基，亚环烷基，氧化烯和亚芳基中的至少一种; Y，Y 1和Y 2各自表示酸分解键; k1，k2，l1，l2，m1，m2，m3各自表示0或1; R1表示H或甲基。