PIXEL STRUCTURE OF REFLECTIVE TYPE ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF MAKING THE SAME
    11.
    发明申请
    PIXEL STRUCTURE OF REFLECTIVE TYPE ELECTROPHORETIC DISPLAY DEVICE AND METHOD OF MAKING THE SAME 审中-公开
    反射型电泳显示装置的像素结构及其制造方法

    公开(公告)号:US20130087792A1

    公开(公告)日:2013-04-11

    申请号:US13434779

    申请日:2012-03-29

    IPC分类号: H01L29/786 H01L33/60

    CPC分类号: H01L27/1288

    摘要: The present invention provides a method of making a pixel structure of a reflective type electrophoretic display device. First, a first metal pattern layer, an insulating layer, a semiconductor pattern layer and a second metal pattern layer are formed sequentially on a substrate. Next, a passivation layer is formed on the substrate, the semiconductor pattern layer and the second metal pattern layer, and an organic photoresist layer is formed on the passivation layer, wherein the organic photoresist layer has a first contact hole exposing the passivation layer. Then, the organic photoresist layer is utilized as a mask to remove the exposed passivation layer and to form a second contact hole in the passivation layer to expose the second metal pattern layer. Subsequently, a third metal pattern layer and a transparent conductive pattern are formed sequentially on the organic photoresist pattern layer and the exposed second metal pattern layer.

    摘要翻译: 本发明提供一种制造反射型电泳显示装置的像素结构的方法。 首先,在基板上依次形成第一金属图案层,绝缘层,半导体图案层和第二金属图案层。 接下来,在衬底,半导体图案层和第二金属图案层上形成钝化层,在钝化层上形成有机光致抗蚀剂层,其中有机光致抗蚀剂层具有暴露钝化层的第一接触孔。 然后,将有机光致抗蚀剂层用作掩模以去除暴露的钝化层,并在钝化层中形成第二接触孔以露出第二金属图案层。 随后,在有机光致抗蚀剂图案层和暴露的第二金属图案层上顺序地形成第三金属图案层和透明导电图案。

    METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE AND STRUCTURE THEREOF
    12.
    发明申请
    METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE AND STRUCTURE THEREOF 失效
    制造薄膜晶体管阵列基板的方法及其结构

    公开(公告)号:US20120261666A1

    公开(公告)日:2012-10-18

    申请号:US13113033

    申请日:2011-05-21

    IPC分类号: H01L29/786 H01L21/336

    CPC分类号: H01L27/1288

    摘要: A method of manufacturing a thin film transistor array substrate and a structure of the same are disclosed. The manufacturing method merely requires two steps of mask fabrication to accomplish the manufacture of thin film transistor array, in which the manufacturing method utilizes a first mask fabrication step to define a pattern of a source electrode and a drain electrode of the thin film transistor, and a partially-exposed dielectric layer, and utilizes a second mask fabrication step to define an arrangement of a transparent conductive layer. The manufacturing method and structure can dramatically reduce the manufacturing cost of masks and simplify the whole manufacturing process.

    摘要翻译: 公开了制造薄膜晶体管阵列基板的方法及其结构。 该制造方法仅需要两个掩模制造步骤来实现薄膜晶体管阵列的制造,其中制造方法利用第一掩模制造步骤来限定薄膜晶体管的源电极和漏电极的图案,以及 部分曝光的介电层,并且利用第二掩模制造步骤来限定透明导电层的布置。 制造方法和结构可以显着降低面罩的制造成本,简化整个制造过程。

    PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF AND DISPLAY PANEL
    13.
    发明申请
    PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF AND DISPLAY PANEL 有权
    像素结构及其制作方法及显示面板

    公开(公告)号:US20100314634A1

    公开(公告)日:2010-12-16

    申请号:US12549370

    申请日:2009-08-28

    申请人: Hsien-Kun Chiu

    发明人: Hsien-Kun Chiu

    摘要: A pixel structure and a manufacturing method thereof and a display panel are provided. An electrode material layer, a shielding material layer, an inter-layer dielectric material layer, a semiconductor material layer and a photoresist-layer are sequentially formed on a substrate. The semiconductor material layer, the inter-layer dielectric material layer, the shielding material layer and the electrode material layer are patterned using the photoresist-layer as a mask to form a semiconductor pattern, an inter-layer dielectric pattern, a shielding pattern and a pixel electrode. A source/drain electrically connected to the pixel electrode and covering a portion of the semiconductor pattern is formed on the pixel electrode. A channel is another portion of the semiconductor uncovered by the source/drain. A dielectric layer covering the source/drain, the semiconductor pattern, the inter-layer dielectric pattern, the shielding pattern and the pixel electrode and a gate disposed on the dielectric layer above the channel are formed.

    摘要翻译: 提供像素结构及其制造方法和显示面板。 在基板上依次形成电极材料层,屏蔽材料层,层间电介质材料层,半导体材料层和光致抗蚀剂层。 使用光致抗蚀剂层作为掩模对半导体材料层,层间电介质材料层,屏蔽材料层和电极材料层进行构图,以形成半导体图案,层间电介质图案,屏蔽图案和 像素电极。 在像素电极上形成与像素电极电连接并覆盖半导体图案的一部分的源极/漏极。 通道是源极/漏极未覆盖的半导体的另一部分。 形成覆盖源极/漏极,半导体图案,层间电介质图案,屏蔽图案和像素电极的介电层以及设置在沟道上方的电介质层上的栅极。

    PIXEL STRUCTURE AND FABRICATING METHOD THEREOF
    14.
    发明申请
    PIXEL STRUCTURE AND FABRICATING METHOD THEREOF 审中-公开
    像素结构及其制作方法

    公开(公告)号:US20090085032A1

    公开(公告)日:2009-04-02

    申请号:US12014098

    申请日:2008-01-15

    IPC分类号: H01L33/00 H01L21/00

    CPC分类号: H01L27/1288 H01L27/1214

    摘要: A method of fabricating a pixel structure is provided. First, a semiconductor material layer and a first conductive layer are sequentially formed on a substrate. Next, a first patterned photoresist layer with a fillister is formed on the first conductive layer by a first mask. A semiconductor layer, a drain, and a source are formed by the first patterned photoresist layer. After removing the first patterned photoresist layer, a dielectric material layer covering the source, the drain, and the semiconductor layer is formed. A second conductive layer is formed on the dielectric material layer. Then, a second patterned photoresist layer with a salient is formed on the second conductive layer by a second mask. A gate and a dielectric layer are formed by the second patterned photoresist layer. After removing the second patterned photoresist layer, a pixel electrode electrically connected to the drain is formed above the substrate.

    摘要翻译: 提供了一种制造像素结构的方法。 首先,在衬底上依次形成半导体材料层和第一导电层。 接下来,通过第一掩模在第一导电层上形成具有填充物的第一图案化光致抗蚀剂层。 半导体层,漏极和源极由第一图案化光致抗蚀剂层形成。 在去除第一图案化光致抗蚀剂层之后,形成覆盖源极,漏极和半导体层的电介质材料层。 在介电材料层上形成第二导电层。 然后,通过第二掩模在第二导电层上形成具有凸起的第二图案化光致抗蚀剂层。 栅极和电介质层由第二图案化光致抗蚀剂层形成。 在去除第二图案化光致抗蚀剂层之后,在衬底上形成电连接到漏极的像素电极。