公开(公告)号：US08059273B2

公开(公告)日：2011-11-15

申请号：US12496788

申请日：2009-07-02

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

IPC: G01J3/28

CPC classification number: G01J3/18 ,  G01J3/02 ,  G01J3/0229 ,  G01J2003/1861 ,  G02F1/134309

Abstract: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

Abstract translation: 光谱仪系统包括用于准直光的光学组件，具有多个同轴对准的环形光栅的微环格栅组件，限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者，光栅可以电连接到能量供应并且例如用交流电压通电，以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光，将准直光引导到微环格栅组件上，以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点，并使用光子检测器检测光谱特性。

公开(公告)号：US07769135B2

公开(公告)日：2010-08-03

申请号：US12288380

申请日：2008-10-20

Applicant: Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

Inventor： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

IPC: G01N23/20

CPC classification number: G01N23/207

Abstract: A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

公开(公告)号：US20090220047A1

公开(公告)日：2009-09-03

申请号：US12254134

申请日：2008-10-20

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

IPC: G01N23/20 ,  H01B1/02 ,  G06F17/10

CPC classification number: G01N23/207

Abstract: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Abstract translation: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数，为每种组合提供了新的带隙工程图。 对于先前测试的材料，使用已知的带隙图，可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中，该分析使得可以配制新的超异质外延半导体系统，例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。

公开(公告)号：US20090185942A1

公开(公告)日：2009-07-23

申请号：US12315520

申请日：2008-12-04

Applicant: Sang Hyouk Choi, SR. ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

Inventor： Sang Hyouk Choi, SR. ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

IPC: B22F1/00

CPC classification number: C22C1/04 ,  B22F2998/00 ,  B22F1/0018

Abstract: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

Abstract translation: 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

公开(公告)号：US5261757A

公开(公告)日：1993-11-16

申请号：US770509

申请日：1991-10-03

Applicant: James R. Elliott, Jr. ,  Mark T. Lord

Inventor： James R. Elliott, Jr. ,  Mark T. Lord

IPC: H04H20/95 ,  H04L1/00 ,  H04S1/00 ,  F16B3/06

CPC classification number: H04S1/007 ,  H04L1/0082 ,  H04H20/95 ,  H04L2001/0094 ,  Y10T403/14 ,  Y10T403/18 ,  Y10T403/20 ,  Y10T403/69

Abstract: A device for mounting a data transmission apparatus to a rotating, tapered and instrumented shaft is provided. This device permits attachment without interfering with shaft rotation or the accuracy of data output, and prevents both radial and axial slippage of the data transmission apparatus. The mounting device consists of a sleeve assembly which is attached to the shaft with clamps that are situated at some distance removed from the instrumented area of the shaft. The data transmission device is secured to the sleeve such that the entire assembly rotates with the shaft. Shim adjustments between sleeve sections assure that a minimum compressive load is transferred to the instrumented area of the shaft and a rubber lining is affixed to a large portion of the interior surface of the sleeve to absorb vibration.

公开(公告)号：US4154491A

公开(公告)日：1979-05-15

申请号：US787686

申请日：1977-04-14

Applicant: William J. Derner ,  James R. Elliott

Inventor： William J. Derner ,  James R. Elliott

IPC: F16C19/26 ,  F16C33/46 ,  F16C43/04

CPC classification number: F16C33/4623 ,  F16C19/26 ,  F16C43/04

Abstract: A bearing assembly retainer ring has pockets for holding cylindrical rollers in arcuately spaced relationship about a central axis of the retainer ring. Each pocket has two end faces that are spaced axially of the retainer ring and two side faces that are spaced laterally of the axial spacing between the two end faces. The pocket extends radially through inner and outer peripheral edges of the retainer ring to receive a roller therein having a diameter which is greater than the radial span of the pocket end faces so that the roller extends beyond the inner and outer peripheral edges of the retainer ring. The axial spacing between the pocket end faces is slightly greater than the axial length of the roller to provide restricted clearances between the ends of the roller and the end faces of the pocket when the roller is centered within the pocket. Chamfers are provided on the end faces of the pockets at the inner and outer peripheral edges thereof. These chamfers enable the roller to pivot within the pocket from a position wherein the roller is aligned axially between the pocket end faces to a cocked position wherein both end faces of the pocket contact the roller and/or the side faces of the pocket contact the roller to resist further pivotal movement.

Abstract translation: 轴承组件保持环具有用于围绕保持环的中心轴线以弓形间隔的关系保持圆柱形辊的凹槽。 每个凹槽具有两个端面，该端面在保持环的轴向间隔开，并且两个侧面与两个端面之间的轴向间隔横向隔开。 口袋径向延伸通过保持环的内周边缘和外周边缘，以容纳其中具有大于口袋端面的径向跨度的直径的辊，使得辊延伸超过保持环的内外边缘 。 袋体端面之间的轴向间距略大于辊子的轴向长度，以便当辊子在口袋内居中时，在滚筒端部和袋口端面之间提供有限的间隙。 在其内周和外周缘处，在凹穴的端面设置有倒角。 这些倒角使得辊能够在凹穴内从一个位置轴向枢转，其中辊子位于口袋端面之间的轴向对准位置，其中口袋的两个端面接触辊子和/或口袋的侧面接触辊子 抵抗进一步的关键运动。

公开(公告)号：US20120200696A1

公开(公告)日：2012-08-09

申请号：US13020194

申请日：2011-02-03

Applicant: Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

Inventor： Yeonjoon Park ,  Sang Hyouk Choi ,  Glen C. King ,  James R. Elliott ,  Albert L. Dimarcantonio

IPC: H04N7/18

CPC classification number: G01P5/26 ,  G01P5/00 ,  G01S1/14 ,  G01S17/95 ,  Y02A90/19

Abstract: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

Abstract translation: 锁定成像系统被配置为检测空气中的干扰。 该系统包括飞机，干涉仪和伸缩成像相机。 飞机包括机身和一对机翼。 飞机配置为在空中飞行。 干涉仪可操作地设置在飞机上并且被配置用于通过沿着两条路径将光束分成两束而产生干涉图案，并且在飞行中在飞机的前飞行路径中的接合点处重新组合两个波束。 伸缩成像照相机被配置为在接合点捕获光束的图像。 所述伸缩成像照相机被配置为基于在所述连接点检测到的所述图像的折射率来检测光路中的空气中的干扰。

公开(公告)号：US08174695B2

公开(公告)日：2012-05-08

申请号：US12508018

申请日：2009-07-23

Applicant: Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

Inventor： Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

IPC: G01J3/28

CPC classification number: G01J3/2823 ,  G01J3/02 ,  G01J3/0256 ,  G01J3/18 ,  G01N21/6452 ,  G01N21/6454 ,  G01N21/648 ,  G01N2021/6421 ,  G01N2021/6478 ,  G02B5/188

Abstract: A spectrometer system includes an array of micro-zone plates (MZP) each having coaxially-aligned ring gratings, a sample plate for supporting and illuminating a sample, and an array of photon detectors for measuring a spectral characteristic of the predetermined wavelength. The sample plate emits an evanescent wave in response to incident light, which excites molecules of the sample to thereby cause an emission of secondary photons. A method of detecting the intensity of a selected wavelength of incident light includes directing the incident light onto an array of MZP, diffracting a selected wavelength of the incident light onto a target focal point using the array of MZP, and detecting the intensity of the selected portion using an array of photon detectors. An electro-optic layer positioned adjacent to the array of MZP may be excited via an applied voltage to select the wavelength of the incident light.

Abstract translation: 光谱仪系统包括每个具有同轴对准的环形光栅的微区域阵列（MZP），用于支撑和照射样品的样品板，以及用于测量预定波长的光谱特性的光子检测器阵列。 样品板响应于入射光发射ev逝波，其激发样品的分子，从而引起次级光子的发射。 检测入射光的所选波长的强度的方法包括将入射光引导到MZP阵列上，使用MZP阵列将入射光的选定波长衍射到目标焦点，并检测所选择的 部分使用光子检测器阵列。 可以通过施加的电压激发邻近MZP阵列定位的电光层，以选择入射光的波长。

公开(公告)号：US08018815B2

公开(公告)日：2011-09-13

申请号：US12490747

申请日：2009-06-24

Applicant: Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

Inventor： Sang H. Choi ,  Yeonjoon Park ,  Glen C. King ,  James R. Elliott

IPC: G11B7/00

CPC classification number: G11B7/1353 ,  G11B7/1374 ,  G11B2007/0006 ,  G11B2007/13722

Abstract: An embodiment generally relates to an optical device suitable for use with an optical medium for the storage and retrieval of data. The optical device includes an illumination means for providing a beam of optical radiation of wavelength λ and an optical path that the beam of optical radiation follows. The optical device also includes a diffractive optical element defined by a plurality of annular sections. The plurality of annular sections having a first material alternately disposed with a plurality of annular sections comprising a second material. The diffractive optical element generates a plurality of focal points and densely accumulated ray points with phase contrast phenomena and the optical medium is positioned at a selected focal point or ray point of the diffractive optical element.

Abstract translation: 实施例一般涉及适合与光学介质一起使用以用于存储和检索数据的光学装置。 该光学装置包括用于提供波长λ的光束的照射装置和光辐射束跟随的光路。 光学装置还包括由多个环形部分限定的衍射光学元件。 所述多个环形部分具有交替设置有包括第二材料的多个环形部分的第一材料。 衍射光学元件产生具有相位对比现象的多个焦点和密集累积的光点，并且光学介质位于衍射光学元件的选定焦点或射线点处。

公开(公告)号：US07927963B2

公开(公告)日：2011-04-19

申请号：US12187415

申请日：2008-08-07

Applicant: Brennan J. Brown ,  James R. Elliott ,  Alvin J. Joseph ,  Edward J. Nowak

Inventor： Brennan J. Brown ,  James R. Elliott ,  Alvin J. Joseph ,  Edward J. Nowak

IPC: H01L21/76

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L21/764 ,  H01L27/12

Abstract: Disclosed are embodiments of a semiconductor structure, a design structure for the semiconductor structure and a method of forming the semiconductor structure. The embodiments reduce harmonics and improve isolation between the active semiconductor layer and the substrate of a semiconductor-on-insulator (SOI) wafer. Specifically, the embodiments incorporate a trench isolation region extending to a fully or partially amorphized region of the wafer substrate. The trench isolation region is positioned outside lateral boundaries of at least one integrated circuit device located at or above the active semiconductor layer of the SOI wafer and, thereby improves isolation. The fully or partially amorphized region of the substrate reduces substrate mobility, which reduces the charge layer at the substrate/BOX interface and, thereby reduces harmonics. Optionally, the embodiments can incorporate an air gap between the wafer substrate and integrated circuit device(s) in order to further improve isolation.

Abstract translation: 公开了半导体结构的实施例，半导体结构的设计结构和形成半导体结构的方法。 这些实施例减少谐波并改善有源半导体层和绝缘体上半导体（SOI）晶片的衬底之间的隔离。 具体地，实施例结合了延伸到晶片衬底的完全或部分非晶化区域的沟槽隔离区域。 沟槽隔离区位于位于SOI晶片的有源半导体层之上或之上的至少一个集成电路器件的横向边界的外侧，从而提高了隔离度。 衬底的完全或部分非晶化区域降低衬底迁移率，这降低了衬底/ BOX界面处的电荷层，从而减少了谐波。 可选地，实施例可以在晶片衬底和集成电路器件之间并入气隙，以进一步改善隔离。