Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
    1.
    发明申请
    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
    通过分层纳米生成制造先进的热电材料

    公开(公告)号:US20090185942A1

    公开(公告)日:2009-07-23

    申请号:US12315520

    申请日:2008-12-04

    IPC分类号: B22F1/00

    摘要: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

    摘要翻译: 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构,这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器(voigen)的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用(电子冷却),医学和科学应用(生物分析装置,医学成像系统),电信以及国防和军事应用(夜视设备)。

    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
    2.
    发明授权
    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
    通过分层纳米生成制造先进的热电材料

    公开(公告)号:US08083986B2

    公开(公告)日:2011-12-27

    申请号:US12315520

    申请日:2008-12-04

    IPC分类号: B28B1/00

    摘要: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

    摘要翻译: 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构,这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器(voigen)的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用(电子冷却),医学和科学应用(生物分析装置,医学成像系统),电信以及国防和军事应用(夜视设备)。

    Fabrication of metal nanoshells
    4.
    发明申请
    Fabrication of metal nanoshells 有权
    金属纳米壳的制造

    公开(公告)号:US20080014621A1

    公开(公告)日:2008-01-17

    申请号:US11827567

    申请日:2007-07-12

    IPC分类号: C12P3/00

    摘要: Metal nanoshells are fabricated by admixing an aqueous solution of metal ions with an aqueous solution of apoferritin protein molecules, followed by admixing an aqueous solution containing an excess of an oxidizing agent for the metal ions. The apoferritin molecules serve as bio-templates for the formation of metal nanoshells, which form on and are bonded to the inside walls of the hollow cores of the individual apoferritin molecules. Control of the number of metal atoms which enter the hollow core of each individual apoferritin molecule provides a hollow metal nonparticle, or nanoshell, instead of a solid spherical metal nanoparticle.

    摘要翻译: 通过将金属离子的水溶液与脱铁铁蛋白分子的水溶液混合,然后混合含有过量的氧化剂的水溶液作为金属离子来制造金属纳米壳。 脱铁铁蛋白分子用作用于形成金属纳米壳的生物模板,其形成在并结合到单个脱铁铁蛋白分子的中空核心的内壁上。 控制进入每个脱铁铁蛋白分子的中空芯的金属原子的数量提供中空金属非粒子,或纳米壳,而不是固体球形金属纳米颗粒。

    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof
    7.
    发明授权
    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof 有权
    超异质外延半导体材料的混合带隙工程及其产品

    公开(公告)号:US08226767B2

    公开(公告)日:2012-07-24

    申请号:US12254134

    申请日:2008-10-20

    IPC分类号: C30B25/18

    CPC分类号: G01N23/207

    摘要: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

    摘要翻译: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数,为每种组合提供了新的带隙工程图。 对于先前测试的材料,使用已知的带隙图,可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中,该分析使得可以配制新的超异质外延半导体系统,例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。

    Micro spectrometer for parallel light and method of use
    8.
    发明授权
    Micro spectrometer for parallel light and method of use 有权
    微光谱仪用于平行光和使用方法

    公开(公告)号:US08059273B2

    公开(公告)日:2011-11-15

    申请号:US12496788

    申请日:2009-07-02

    IPC分类号: G01J3/28

    摘要: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

    摘要翻译: 光谱仪系统包括用于准直光的光学组件,具有多个同轴对准的环形光栅的微环格栅组件,限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者,光栅可以电连接到能量供应并且例如用交流电压通电,以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光,将准直光引导到微环格栅组件上,以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点,并使用光子检测器检测光谱特性。

    Hybrid Bandgap Engineering For Super-Hetero-Epitaxial Semiconductor Materials, and Products Thereof
    10.
    发明申请
    Hybrid Bandgap Engineering For Super-Hetero-Epitaxial Semiconductor Materials, and Products Thereof 有权
    超异质外延半导体材料的混合带隙工程及其产品

    公开(公告)号:US20090220047A1

    公开(公告)日:2009-09-03

    申请号:US12254134

    申请日:2008-10-20

    IPC分类号: G01N23/20 H01B1/02 G06F17/10

    CPC分类号: G01N23/207

    摘要: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

    摘要翻译: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数,为每种组合提供了新的带隙工程图。 对于先前测试的材料,使用已知的带隙图,可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中,该分析使得可以配制新的超异质外延半导体系统,例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。