Abstract:
A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system and to provide the first number of chip-select signals to the first number of ranks in response to the phase-locked clock signals, the received bank address signals, the received second number of chip-select signals, and at least one of the received row/column address signals.
Abstract:
A module is electrically connectable to a computer system. The module includes a first surface and a first plurality of circuit packages coupled to the first surface. The module further includes a second surface and a second plurality of circuit packages coupled to the second surface. The second surface faces the first surface. The module further includes at least one thermal conduit positioned between the first surface and the second surface. The at least one thermal conduit is in thermal communication with the first plurality of circuit packages and the second plurality of circuit packages.
Abstract:
A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module.
Abstract:
A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The plurality of memory devices has a first number of memory devices. The circuit comprises a logic element configurable to receive a set of input signals from the computer system. The circuit further comprising a register and a phase-lock loop circuit, the phase-lock loop circuit configurable to be operatively coupled to the plurality of memory devices, the logic element, and the register. The set of input signals corresponds to a second number of memory devices smaller than the first number of memory devices.
Abstract:
A module is electrically connectable to a computer system. The module includes a plurality of electrical contacts which are electrically connectable to the computer system. The module further includes a first surface and a first plurality of circuits coupled to the first surface. The first plurality of circuits is in electrical communication with the electrical contacts. The module further includes a second surface and a second plurality of circuits coupled to the second surface. The second plurality of circuits is in electrical communication with the electrical contacts. The second surface faces the first surface. The module further includes at least one thermally conductive layer positioned between the first surface and the second surface. The at least one thermally conductive layer is in thermal communication with the first plurality of circuits, the second plurality of circuits, and a first set of the plurality of electrical contacts.
Abstract:
A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The plurality of memory devices has a first number of memory devices. The circuit comprises a logic element configurable to receive a set of input signals from the computer system. The circuit further comprising a register and a phase-lock loop circuit, the phase-lock loop circuit configurable to be operatively coupled to the plurality of memory devices, the logic element, and the register. The set of input signals corresponds to a second number of memory devices smaller than the first number of memory devices.
Abstract:
A module is electrically connectable to a computer system. The module includes at least one multilayer structure having a plurality of electrical contacts which are electrically connectable to the computer system. The module further includes a first printed circuit board coupled to the at least one multilayer structure. The first printed circuit board has a first surface and a first plurality of components mounted on the first surface. The first plurality of components is in electrical communication with the electrical contacts. The module further includes a second printed circuit board coupled to the at least one multilayer structure. The second printed circuit board has a second surface and a second plurality of components mounted on the second surface. The second plurality of components is in electrical communication with the electrical contacts. The second surface of the second printed circuit board faces the first surface of the first printed circuit board. The module further includes at least one thermally conductive layer positioned between the first plurality of components and the second plurality of components. The at least one thermally conductive layer is in thermal communication with the first plurality of components, the second plurality of components, and the electrical contacts.
Abstract:
A load-reducing memory module includes a plurality of memory components such as DRAMs. The memory components are organized into sets or ranks such that they can be accessed simultaneously for the full data bit-width of the memory module. A plurality of load reducing switching circuits is used to drive data bits from a memory controller to the plurality of memory components. The load reducing switching circuits are also used to multiplex the data lines from the memory components and drive the data bits to the memory controller.
Abstract:
A load-reducing memory module includes a plurality of memory components such as DRAMs. The memory components are organized into sets or ranks such that they can be accessed simultaneously for the full data bit-width of the memory module. A plurality of load reducing switching circuits is used to drive data bits from a memory controller to the plurality of memory components. The load reducing switching circuits are also used to multiplex the data lines from the memory components and drive the data bits to the memory controller.
Abstract:
A memory system and method utilizing one or more memory modules is provided. The memory module includes a plurality of memory devices and a controller configured to receive control information from a system memory controller and to produce module control signals. The memory module further includes a plurality of circuits, for example byte-wise buffers, which are configured to selectively isolate the plurality of memory devices from the system memory controller. The circuits are operable, in response to the module control signals, to drive write data from the system memory controller to the plurality of memory devices and to merge read data from the plurality of memory devices to the system memory controller. The circuits are distributed at corresponding positions separate from one another.