Uplink ACK/NACK signaling in carrier aggregation environment
    11.
    发明授权
    Uplink ACK/NACK signaling in carrier aggregation environment 失效
    载波聚合环境中的上行ACK / NACK信令

    公开(公告)号:US08553635B2

    公开(公告)日:2013-10-08

    申请号:US13139429

    申请日:2009-12-22

    Abstract: An uplink ACK/NACK signaling method and apparatus in carrier aggregation environment are disclosed. The method for performing a HARQ procedure by a user equipment in a wireless communication system includes receiving one or more control channels carrying downlink scheduling information from a base station (BS), wherein each control channel carries information indicating a total number of control channels transmitted from the BS to the UE, and determining whether the total number of control channels transmitted to the UE is identical to the number of control channels received at the UE.

    Abstract translation: 公开了载波聚合环境中的上行ACK / NACK信令方法和装置。 用于在无线通信系统中由用户设备执行HARQ过程的方法包括从基站(BS)接收携带下行链路调度信息的一个或多个控制信道,其中每个控制信道携带指示从 BS发送给UE,并确定发送给UE的控制信道的总数是否与在UE处接收的控制信道的数量相同。

    Nanowire memory device and method of manufacturing the same
    18.
    发明授权
    Nanowire memory device and method of manufacturing the same 有权
    纳米线记忆装置及其制造方法

    公开(公告)号:US08293654B2

    公开(公告)日:2012-10-23

    申请号:US13425807

    申请日:2012-03-21

    Abstract: A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

    Abstract translation: 提供了一种纳米线存储器件及其制造方法。 存储器件包括:衬底; 形成在所述基板上的第一电极; 从所述第一电极的端部延伸的第一纳米线; 形成在所述第一电极上以与所述第一电极重叠的第二电极; 以及从与第一电极的端部对应的第二电极的端部沿与第一纳米线相同的方向延伸的第二纳米线,其中在第一和第二电极之间存在绝缘层。

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