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公开(公告)号：US08530801B2
公开(公告)日：2013-09-10
申请号：US11922997
申请日：2006-06-30
IPC分类号： H05B3/06
CPC分类号： H01L21/67115 , C23C16/24 , C23C16/52 , C30B25/105 , C30B29/06 , C30B35/005 , H01L21/67288 , H01L21/68742
摘要： A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.
摘要翻译： 提供一种用于制造半导体晶片的方法和装置，用于提高半导体晶片的质量，此外，为了通过防止在半导体晶片的阶段产生翘曲来提高通过使用半导体晶片制造的半导体器件的质量 在对半导体晶片基板进行热处理时的放置工序。 通过放置装置进行放置处理，使得当晶片前表面温度和晶片背面温度之间的温度差变为最大时，以及在晶片中产生翘曲的时间在晶片的时间之前 与提升销或感受器接触（即，在温度处于600℃的红外温度区域的上限值之后的时间），并且提升销与晶片后表面接触。
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12.发明授权Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer 有权受体器件，外延晶片的制造装置以及外延晶片的制造方法公开(公告)号：US08372196B2
公开(公告)日：2013-02-12
申请号：US12610708
申请日：2009-11-02
IPC分类号： C30B21/02
CPC分类号： C23C16/4586 , C23C16/46 , C30B25/10 , C30B25/12
摘要： In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.
摘要翻译： 在用于制造具有与基座大致同心地安装的晶片的外延晶片的制造装置中，设置中心杆，以在基座的非安装表面的一侧沿上下方向延伸， 上端邻近基座的中心。 利用这种布置，朝向基座照射的一部分辐射光在到达基座的中心部分之前被中心棒漫反射，从而减少了照射到基座的中心部分的辐射光的量以及降低温度 的部分。 由于中心杆和基座不与表面接触，所以中心杆不会从基座受热，从而抑制温度在基座的中心部分局部减小。
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公开(公告)号：US20120015454A1
公开(公告)日：2012-01-19
申请号：US13206310
申请日：2011-08-09
CPC分类号： C23C16/24 , C23C16/4585 , C23C16/4586 , C30B23/063 , C30B25/12 , H01L21/68735
摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.
摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。
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公开(公告)号：US20100143579A1
公开(公告)日：2010-06-10
申请号：US12632032
申请日：2009-12-07
申请人： Kazuhiro NARAHARA
发明人： Kazuhiro NARAHARA
CPC分类号： C23C16/481 , C23C16/4583 , C23C16/52 , C30B25/10 , C30B25/16 , C30B29/06 , H01L21/67248
摘要： A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.
摘要翻译： 提供一种制造外延晶片的方法，其中外延层生长在基本上水平放置在基座上的硅晶片的主表面上。 该方法包括：外延层的生长步骤; 以及冷却具有外延层的外延晶片的冷却步骤。 冷却步骤包括：测量外延晶片的温度的晶片测量步骤; 基座测量步骤，用于测量所述基座的温度; 以及控制步骤，控制能够至少加热所述基座或所述外延晶片的加热器，使得所述外延晶片的温度与所述基座的温度之间的差异在预定范围内。
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公开(公告)号：US20070228524A1
公开(公告)日：2007-10-04
申请号：US11731268
申请日：2007-03-30
IPC分类号： H01L29/06
CPC分类号： H01L21/02052 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/68735
摘要： A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.
摘要翻译： 在硅晶片的制造过程中识别硅晶片的底面的作用。 并且还确定了优选的特征。 为了获得上述特征，提供了一种将在普通硅晶片的制造方法中实施的方法。 例如，该方法包括：用于清洁硅晶片的预清洁工艺，其具有加工成镜面光洁度的顶面和底面; 以及快速热处理或外延生长工艺，其中预清洗工艺包括氢氟酸（HF）工艺和随后的纯水（DIW）工艺。
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公开(公告)号：US20070227441A1
公开(公告)日：2007-10-04
申请号：US11731815
申请日：2007-03-30
CPC分类号： C23C16/24 , C23C16/4585 , C23C16/4586 , C30B23/063 , C30B25/12 , H01L21/68735
摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.
摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。
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