公开(公告)号：US20090122596A1

公开(公告)日：2009-05-14

申请号：US12073678

申请日：2008-03-07

Applicant: In-Jun Hwang ,  Hyung-soon Shin ,  Seung-Jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： In-Jun Hwang ,  Hyung-soon Shin ,  Seung-Jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

IPC: G11C11/14

CPC classification number: G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

Abstract translation: 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两个操作模式中的每一个，并且响应于所述至少两个操作模式定义连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

公开(公告)号：US20070183188A1

公开(公告)日：2007-08-09

申请号：US11657646

申请日：2007-01-25

Applicant: Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

Inventor： Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-Jun Hwang

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C19/0808

Abstract: Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.

Abstract translation: 示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。 一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位 阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

公开(公告)号：US09773972B1

公开(公告)日：2017-09-26

申请号：US15420091

申请日：2017-01-30

Applicant: Ki-woong Kim ,  Kee-won Kim ,  Se-chung Oh ,  Yong-sung Park ,  Ju-hyun Kim

Inventor： Ki-woong Kim ,  Kee-won Kim ,  Se-chung Oh ,  Yong-sung Park ,  Ju-hyun Kim

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.

公开(公告)号：US09508925B2

公开(公告)日：2016-11-29

申请号：US14816410

申请日：2015-08-03

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/222 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract translation: 提供了一种磁存储器件。 磁存储器件包括第一磁化层，布置在第一磁化层上的隧道势垒，设置在隧道势垒上的第二磁化层，以及设置在第二磁化层的侧壁的至少一部分上的自旋电流辅助层 。

公开(公告)号：US20140231941A1

公开(公告)日：2014-08-21

申请号：US14182660

申请日：2014-02-18

Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

IPC: H01L43/02

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/325 ,  H01F10/3286 ,  H01L27/228

Abstract: Magnetoresistive structures, memory devices including the same, and methods of manufacturing the magnetoresistive structures and the memory devices, include a plurality of free layers each having a magnetization direction that is changeable, a separation layer covering at least two of the plurality of free layers, and at least one pinned layer opposing the plurality of free layers. The separation layer is between the at least one pinned layer and the plurality of free layers. The at least one pinned layer has a magnetization direction that is fixed.

Abstract translation: 磁阻结构，包括其的存储器件以及制造磁阻结构和存储器件的方法包括多个具有可变化的磁化方向的自由层，分离层覆盖多个自由层中的至少两个， 以及与多个自由层相对的至少一个钉扎层。 分离层位于至少一个钉扎层和多个自由层之间。 所述至少一个钉扎层具有固定的磁化方向。

公开(公告)号：US20140211552A1

公开(公告)日：2014-07-31

申请号：US14162144

申请日：2014-01-23

Applicant: Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

Inventor： Ung-hwan PI ,  Kwang-seok KIM ,  Kee-won KIM ,  Sung-chul LEE ,  Young-man JANG

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/18 ,  H01L27/222 ,  H01L43/08

Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Abstract translation: 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。

公开(公告)号：US08754717B2

公开(公告)日：2014-06-17

申请号：US13096627

申请日：2011-04-28

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H03B15/00 ,  B82Y25/00

CPC classification number: H03B15/006 ,  B82Y25/00

Abstract: An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

Abstract translation: 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。

公开(公告)号：US08437160B2

公开(公告)日：2013-05-07

申请号：US11978583

申请日：2007-10-30

Applicant: In-jun Hwang ,  Sung-hoon Choa ,  Young-jin Cho ,  Kee-won Kim

Inventor： In-jun Hwang ,  Sung-hoon Choa ,  Young-jin Cho ,  Kee-won Kim

IPC: G11C5/02

CPC classification number: G11C5/02 ,  G11C11/16 ,  G11C19/0808 ,  G11C2213/71 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551

Abstract: Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.

Abstract translation: 本发明提供一种多层存储装置，其特征在于，包括具有垂直堆叠的多个存储单元和多个存储单元行的存储单元组，以及与所述存储单元组连接的多个晶体管，其中， 连接到包含在多个存储单元行中的至少两行的存储单元，并通过公共线连接。 公共线可以是栅线或位线。

公开(公告)号：US08427246B2

公开(公告)日：2013-04-23

申请号：US12929932

申请日：2011-02-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L43/08 ,  H03B15/006

Abstract: Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

Abstract translation: 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

公开(公告)号：US08411498B2

公开(公告)日：2013-04-02

申请号：US12923377

申请日：2010-09-17

Applicant: Kwang-seok Kim ,  Kee-won Kim ,  Sun-ae Seo ,  Seung-kyo Lee ,  Young-man Jang

Inventor： Kwang-seok Kim ,  Kee-won Kim ,  Sun-ae Seo ,  Seung-kyo Lee ,  Young-man Jang

IPC: G11C11/14

CPC classification number: H01L27/228 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

Abstract: Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.

Abstract translation: 提供垂直磁隧道结（MTJ）装置，制造垂直MTJ装置的方法，包括垂直MTJ装置的电子装置和制造电子装置的方法，垂直MTJ装置包括钉扎层，隧穿层和自由层 。 被钉扎层和自由层中的至少一个包括包含无定形垂直磁各向异性（PMA）材料的多层结构。