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    REDUNDANCY CIRCUITS
    11.
    发明申请
    REDUNDANCY CIRCUITS 有权
    冗余电路

    公开(公告)号：US20110241764A1

    公开(公告)日：2011-10-06

    申请号：US12844454

    申请日：2010-07-27

    Applicant: Ki Hoon Lee

    Inventor： Ki Hoon Lee

    IPC: H03K19/003

    CPC classification number: H03K19/00392

    Abstract: In one embodiment, a redundancy circuit may include a comparison unit configured to record a first repair address through fuse cutting, compare a comparison address with the first repair address, and output a comparison result signal; a first fuse enable unit configured to output a first fuse enable signal for repairing the first repair address; a second fuse enable unit configured to output a second fuse enable signal for repairing a second repair address; a first determination unit configured to output a first repair determination signal in response to receipt of the first fuse enable signal and the comparison result signal; and a second determination unit configured to output a second repair determination signal in response to receipt of an inverted signal of a value of the comparison result signal corresponding to the certain bit, remaining bits, and the second fuse enable signal.

    Abstract translation: 在一个实施例中，冗余电路可以包括比较单元，其被配置为通过熔丝切割记录第一修复地址，将比较地址与第一修复地址进行比较，并输出比较结果信号; 第一熔丝使能单元，被配置为输出用于修复所述第一修复地址的第一熔丝使能信号; 第二熔丝使能单元，被配置为输出用于修复第二修复地址的第二熔丝使能信号; 第一确定单元，被配置为响应于接收到所述第一熔丝使能信号和所述比较结果信号而输出第一修复确定信号; 以及第二确定单元，被配置为响应于与特定比特，剩余比特和第二保险丝使能信号相对应的比较结果信号的值的反相信号而输出第二修复确定信号。

    Method of depositing thin film
    13.
    发明授权
    Method of depositing thin film 失效
    沉积薄膜的方法

    公开(公告)号：US07785664B2

    公开(公告)日：2010-08-31

    申请号：US11571547

    申请日：2005-12-14

    Applicant: Tae Wook Seo ,  Young Hoon Park ,  Ki Hoon Lee ,  Sahng Kyoo Lee

    Inventor： Tae Wook Seo ,  Young Hoon Park ,  Ki Hoon Lee ,  Sahng Kyoo Lee

    IPC: C23C16/06 ,  C23C16/34

    CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/76861

    Abstract: A method is provided for depositing thin films in which the thin films are continuously deposited into one chamber and 1-6 wafers are loaded into the chamber. In the method, a process gap between a shower head or a gas injection unit and a substrate is capable of being controlled. The method comprises (a) loading at least one substrate into the chamber, (b) depositing the Ti thin film onto the substrate, adjusted so that a first process gap is maintained, (c) moving a wafer block so that the first process gap is changed into a second process gap in order to control the process gap of the substrate upon which the Ti thin film is deposited, (d) depositing the TiN thin film onto the substrate, moved to set the second process gap, and (e) unloading the substrate upon which the Ti/TiN thin films are deposited.

    Abstract translation: 提供了一种用于沉积薄膜的方法，其中薄膜连续沉积到一个室中，并且将1-6个晶片装入室中。 在该方法中，能够控制淋浴喷头或气体喷射单元与基板之间的处理间隙。 该方法包括：（a）将至少一个衬底装载到腔室中，（b）将Ti薄膜沉积到衬底上，进行调整，使得保持第一工艺间隙;（c）移动晶片块使得第一工艺间隙 改变为第二工艺间隙，以便控制沉积Ti薄膜的衬底的工艺间隙，（d）将TiN薄膜沉积到衬底上，移动以设定第二工艺间隙，（e） 卸载沉积有Ti / TiN薄膜的基板。

    Method of Depositing Thin Film and Method of Manufacturing Semiconductor Using the Same
    15.
    发明申请
    Method of Depositing Thin Film and Method of Manufacturing Semiconductor Using the Same 有权
    沉积薄膜的方法及使用其制造半导体的方法

    公开(公告)号：US20080166887A1

    公开(公告)日：2008-07-10

    申请号：US11720450

    申请日：2005-11-28

    Applicant: Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    Inventor： Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    IPC: H01L21/31

    CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/3146 ,  Y10S438/952

    Abstract: Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

    Abstract translation: 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法，通过增加抗蚀性而具有高选择性，同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括（a）在基底的底膜上沉积碳抗反射膜; 和（b）在碳抗反射膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F 或aC：Si，具有高选择性，使用原子层沉积工艺，厚度为1至100nm。 因此，在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜，并且碳抗反射膜的密度和压缩应力增加，从而增加蚀刻选择性。

    Method of depositing Ge-Sb-Te thin film
    17.
    发明授权
    Method of depositing Ge-Sb-Te thin film 有权
    Ge-Sb-Te薄膜沉积方法

    公开(公告)号：US08029859B2

    公开(公告)日：2011-10-04

    申请号：US11507829

    申请日：2006-08-22

    Applicant: Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    Inventor： Jung-Wook Lee ,  Byung-Chul Cho ,  Ki-Hoon Lee ,  Tae-Wook Seo

    IPC: C23C16/00 ,  H05H1/24 ,  C23C16/06

    CPC classification number: C23C16/45523 ,  C23C16/30

    Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

    Abstract translation: 提供了一种沉积Ge-Sb-Te薄膜的方法，包括：Ge-Sb-Te薄膜形成步骤，用于进料和吹扫包括Ge，Sb和Te中任一种的第一前体;第二前体，包括 Ge，Sb和Te中的另一个，和包含Ge，Sb和Te中的另一个的第三前体进入并安装晶片的腔室，并在晶片上形成Ge-Sb-Te薄膜; 以及在供给第一至第三前体中的任何一个的同时进料反应气体的反应气体供给步骤。

    COMMUNICATION METHOD IN WIRELESS NETWORK
    18.
    发明申请
    COMMUNICATION METHOD IN WIRELESS NETWORK 有权
    无线网络中的通信方法

    公开(公告)号：US20110219367A1

    公开(公告)日：2011-09-08

    申请号：US13063549

    申请日：2009-09-11

    Applicant: Ki Hoon Lee

    Inventor： Ki Hoon Lee

    IPC: G06F9/44

    CPC classification number: H04W8/245 ,  G06F8/65 ,  H04L67/34 ,  H04N21/43637 ,  H04N21/818 ,  H04W24/02

    Abstract: The present invention relates to a communication method for upgrading software in a wireless network. The communication method according to one aspect of the present invention relates to a communication method for upgrading software on a specific device on a wireless network, and comprises a step wherein a first message that includes information indicating versions of one or more pieces of software being used by said device is transmitted to a controller of said wireless network and a step wherein said device receives from said controller a second message that includes indication information indicating whether it is necessary to perform a software upgrade.

    Abstract translation: 本发明涉及一种用于升级无线网络中的软件的通信方法。 根据本发明的一个方面的通信方法涉及一种用于在无线网络上的特定设备上升级软件的通信方法，并且包括以下步骤：其中包括指示正在使用的一个或多个软件的版本的信息的第一消息 通过所述设备被发送到所述无线网络的控制器，并且其中所述设备从所述控制器接收包括指示是否需要执行软件升级的指示信息的第二消息的步骤。

    Method of depositing thin film and method of manufacturing semiconductor using the same
    19.
    发明授权
    Method of depositing thin film and method of manufacturing semiconductor using the same 有权
    沉积薄膜的方法和使用其制造半导体的方法

    公开(公告)号：US07842606B2

    公开(公告)日：2010-11-30

    申请号：US11720450

    申请日：2005-11-28

    Applicant: Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    Inventor： Ki Hoon Lee ,  Young Hoon Park ,  Sahng Kyoo Lee ,  Tae Wook Seo ,  Ho Seung Chang

    IPC: H01L21/4763 ,  H01L21/02

    CPC classification number: G03F7/091 ,  H01L21/0276 ,  H01L21/3146 ,  Y10S438/952

    Abstract: Disclosed herein are a method of depositing a thin film and a method of manufacturing a semiconductor using the same, having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of depositing a thin film according to the invention includes (a) depositing an carbon anti-reflective film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the carbon anti-reflective film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from 1 to 100 nm using an atomic layer deposition process. Therefore, an ultrathin film having etching resistance is formed on or in the carbon anti-reflective film and the density and compressive stress of the carbon anti-reflective film are increased, thus increasing etching selectivity.

    Abstract translation: 本文公开了一种沉积薄膜的方法和使用该薄膜的半导体的制造方法，通过增加抗蚀性而具有高选择性，同时将与抗反射性相关联的消光系数保持为低。 根据本发明的沉积薄膜的方法包括（a）在基底的底膜上沉积碳抗反射膜; 和（b）在碳抗反射膜的表面或内部添加含有氮（N），氟（F）或硅（Si）的化合物，沉积a：N，aC：F 或aC：Si，具有高选择性，使用原子层沉积工艺，厚度为1至100nm。 因此，在碳抗反射膜上或碳抗反射膜上形成具有耐腐蚀性的超薄膜，并且碳抗反射膜的密度和压缩应力增加，从而增加蚀刻选择性。

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