公开(公告)号：US08874416B2

公开(公告)日：2014-10-28

申请号：US13308124

申请日：2011-11-30

Applicant: Krishna Vepa ,  Parris C. M. Hawkins ,  Andreas Neuber

Inventor： Krishna Vepa ,  Parris C. M. Hawkins ,  Andreas Neuber

IPC: G06G7/48 ,  G05B19/418 ,  G06Q10/04

CPC classification number: G05B19/4187 ,  G05B2219/45031 ,  G06Q10/04 ,  Y02P80/40 ,  Y02P90/18 ,  Y02P90/205

Abstract: A resource usage optimization server determines a degradation caused by a first resource. The resource usage optimization server determines a cleaning caused by a second resource. The resource usage optimization server calculates a ratio of the degradation and the cleaning.

Abstract translation: 资源使用优化服务器确定由第一资源引起的恶化。 资源使用优化服务器确定由第二资源引起的清理。 资源使用优化服务器计算劣化和清洁的比例。

公开(公告)号：US20120143574A1

公开(公告)日：2012-06-07

申请号：US13308124

申请日：2011-11-30

Applicant: Krishna Vepa ,  Parris C.M. Hawkins ,  Andreas Neuber

Inventor： Krishna Vepa ,  Parris C.M. Hawkins ,  Andreas Neuber

IPC: G06F17/10

CPC classification number: G05B19/4187 ,  G05B2219/45031 ,  G06Q10/04 ,  Y02P80/40 ,  Y02P90/18 ,  Y02P90/205

Abstract: A resource usage optimization server determines a degradation caused by a first resource. The resource usage optimization server determines a cleaning caused by a second resource. The resource usage optimization server calculates a ratio of the degradation and the cleaning.

Abstract translation: 资源使用优化服务器确定由第一资源引起的恶化。 资源使用优化服务器确定由第二资源引起的清理。 资源使用优化服务器计算劣化和清洁的比例。

公开(公告)号：US07727782B2

公开(公告)日：2010-06-01

申请号：US11823061

申请日：2007-06-25

Applicant: Yashraj K. Bhatnagar ,  Krishna Vepa

Inventor： Yashraj K. Bhatnagar ,  Krishna Vepa

IPC: H01L21/66

CPC classification number: G01N21/9501

Abstract: An apparatus and method for inspecting wafers at a reclaim factory is described. Embodiments of the invention describe an apparatus in which a wafer ID and wafer thickness may be simultaneously measured. A wafer is placed onto a sloped surface and positioned by aligning a notch in the wafer with a pin located on the surface, and by propping the wafer against a pair of laterally opposite restraints. In one embodiment, a foot-switch is used to trigger the simultaneous wafer ID and wafer thickness measurements.

Abstract translation: 描述了在回收工厂检查晶片的装置和方法。 本发明的实施例描述了可以同时测量晶片ID和晶片厚度的装置。 将晶片放置在倾斜表面上并通过将晶片中的凹口与位于表面上的销对准并且通过将晶片抵靠一对横向相对的约束来支撑而定位。 在一个实施例中，脚踏开关用于触发同时晶片ID和晶片厚度测量。

公开(公告)号：US07695982B2

公开(公告)日：2010-04-13

申请号：US11737708

申请日：2007-04-19

Applicant: Hong Wang ,  Krishna Vepa ,  Paul V. Miller

Inventor： Hong Wang ,  Krishna Vepa ,  Paul V. Miller

IPC: H01L21/00

CPC classification number: H01L21/31111 ,  H01L21/02079 ,  H01L21/31053 ,  Y10S438/911 ,  Y10S438/951

Abstract: A wafer comprising a low-k dielectric layer is refurbished for reuse. Initially, a removable layer is provided on the wafer. The low-k dielectric layer is formed over the removable layer. The overlying low-k dielectric layer is removed from the wafer by etching away the removable layer by at least partially immersing the wafer in an etching solution. Thereafter, another low-k dielectric layer can be formed over another removable layer.

Abstract translation: 包括低k电介质层的晶片被翻新以重新使用。 最初，在晶片上设置可移除层。 低k电介质层形成在可移除层上。 通过至少部分地将晶片浸入蚀刻溶液中，通过蚀刻除去可去除层而从晶片上去除覆盖的低k电介质层。 此后，可以在另一可移除层上形成另一低k电介质层。

公开(公告)号：US07659206B2

公开(公告)日：2010-02-09

申请号：US11359301

申请日：2006-02-21

Applicant: Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

Inventor： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/316

CPC classification number: H01L21/31111 ,  H01L21/02079

Abstract: A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

Abstract translation: 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳，并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者，剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中，赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

公开(公告)号：US07657390B2

公开(公告)日：2010-02-02

申请号：US11265237

申请日：2005-11-02

Applicant: Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

Inventor： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

IPC: G06F19/00

CPC classification number: H01L21/67294 ,  H01L21/67288

Abstract: Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.

Abstract translation: 用于测试半导体制造工具的测试衬底通过从数据库读取在每个测试衬底上执行的工艺步骤并从多个填充工艺中选择回收过程来回收。 回收过程可以包括用于回收每个测试基底的晶格缺陷或金属污染物还原处理。 将每个测试基底分选并放入一组具有分配给该组的测试底物的共同缺陷或污染物还原处理的测试基底。 描述和要求保护附加的特征。

公开(公告)号：US20060240675A1

公开(公告)日：2006-10-26

申请号：US11359301

申请日：2006-02-21

Applicant: Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

Inventor： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31111 ,  H01L21/02079

Abstract: A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

Abstract translation: 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳，并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者，剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中，赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

公开(公告)号：US06672943B2

公开(公告)日：2004-01-06

申请号：US09845710

申请日：2001-04-30

Applicant: Michael Vogtmann ,  Krishna Vepa ,  Michael Wisnieski

Inventor： Michael Vogtmann ,  Krishna Vepa ,  Michael Wisnieski

IPC: B24G100

CPC classification number: B24D7/06 ,  B24B7/228 ,  H01L2223/54493

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus (100) includes a first spindle (110) having an eccentric-shaped abrasive matrix (112) coupled thereto and a second spindle (116) adapted to hold a substrate (118) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center (134) for only a portion of the time during grinding operations.

Abstract translation: 本发明提供了示例性的方法，系统和装置，其通过避免或减少对晶片的过度研磨损伤来在磨削操作之后提供改进的衬底特性。 在一个实施例中，磨削装置（100）包括具有与其联接的偏心形磨料矩阵（112）的第一心轴（110）和适于保持要研磨的衬底（118）的第二心轴（116）。 第二主轴偏离所述第一主轴，使得研磨基体仅在研磨操作期间的一部分时间通过基板表面中心（134）。

公开(公告)号：US20100249968A1

公开(公告)日：2010-09-30

申请号：US12730969

申请日：2010-03-24

Applicant: Andreas Neuber ,  Parth Sethia ,  Parris C.M. Hawkins ,  Krishna Vepa ,  Raymond Murray

Inventor： Andreas Neuber ,  Parth Sethia ,  Parris C.M. Hawkins ,  Krishna Vepa ,  Raymond Murray

IPC: G06F19/00 ,  G06F3/048

CPC classification number: G06Q50/04 ,  G06Q10/06 ,  Y02P90/30

Abstract: A method and system for factory resource optimization identification is described herein. In one embodiment, an expected usage rate is determined for a resource in a manufacturing facility and an actual usage rate is determined for the resource in the manufacturing facility. A comparison between the expected usage rate and the actual usage rate is facilitated. A determination is made, based on the comparison, of whether a variance between the expected usage rate and the actual usage rate exceeds a threshold. A notification is provided if the variance exceeds the threshold.

Abstract translation: 本文描述了用于工厂资源优化识别的方法和系统。 在一个实施例中，为制造设施中的资源确定预期使用率，并且确定制造设施中的资源的实际使用率。 预期使用率与实际使用率之间的比较是有利的。 基于比较来确定预期使用率和实际使用率之间的差异是否超过阈值。 如果方差超过阈值，则提供通知。

公开(公告)号：US20090061545A1

公开(公告)日：2009-03-05

申请号：US12177752

申请日：2008-07-22

Applicant: Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang ,  Christophe Maleville

Inventor： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang ,  Christophe Maleville

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

Abstract: A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

Abstract translation: 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。