公开(公告)号：US07659206B2

公开(公告)日：2010-02-09

申请号：US11359301

申请日：2006-02-21

申请人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

发明人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/316

CPC分类号： H01L21/31111 ,  H01L21/02079

摘要： A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

摘要翻译： 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳，并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者，剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中，赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

公开(公告)号：US20060240675A1

公开(公告)日：2006-10-26

申请号：US11359301

申请日：2006-02-21

申请人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

发明人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Venkata Balagani

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31111 ,  H01L21/02079

摘要： A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

摘要翻译： 处理衬底的方法包括在衬底上沉积碳氧化硅并从衬底去除碳氧化硅。 衬底上的碳氧化硅通过暴露于加热基底的通电含氧气体而脱碳，并将碳氧化硅层转化为氧化硅层。 通过暴露于含氟工艺气体的等离子体来除去氧化硅。 或者，剩余的氧化硅可以通过含氟酸性浴除去。 在另一个版本中，赋予含氟气体和含氧气体的等离子体以从基底去除碳氧化硅。

公开(公告)号：US20070099310A1

公开(公告)日：2007-05-03

申请号：US11265237

申请日：2005-11-02

申请人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

发明人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： H01L21/00 ,  G06F19/00

CPC分类号： H01L21/67294 ,  H01L21/67288

摘要： Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.

摘要翻译： 用于测试半导体制造工具的测试衬底通过从数据库读取在每个测试衬底上执行的工艺步骤并从多个填充工艺中选择回收过程来回收。 回收过程可以包括用于回收每个测试基底的晶格缺陷或金属污染物还原处理。 将每个测试基底分选并放入一组具有分配给该组的测试底物的共同缺陷或污染物还原处理的测试基底。 描述和要求保护附加的特征。

公开(公告)号：US07657390B2

公开(公告)日：2010-02-02

申请号：US11265237

申请日：2005-11-02

申请人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

发明人： Krishna Vepa ,  Yashraj Bhatnagar ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： G06F19/00

CPC分类号： H01L21/67294 ,  H01L21/67288

摘要： Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.

摘要翻译： 用于测试半导体制造工具的测试衬底通过从数据库读取在每个测试衬底上执行的工艺步骤并从多个填充工艺中选择回收过程来回收。 回收过程可以包括用于回收每个测试基底的晶格缺陷或金属污染物还原处理。 将每个测试基底分选并放入一组具有分配给该组的测试底物的共同缺陷或污染物还原处理的测试基底。 描述和要求保护附加的特征。

公开(公告)号：US20090061545A1

公开(公告)日：2009-03-05

申请号：US12177752

申请日：2008-07-22

申请人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang ,  Christophe Maleville

发明人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang ,  Christophe Maleville

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US07402520B2

公开(公告)日：2008-07-22

申请号：US10998289

申请日：2004-11-26

申请人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

发明人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： H01L21/461

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US20060115986A1

公开(公告)日：2006-06-01

申请号：US10998289

申请日：2004-11-26

申请人： Raymond Donohoe ,  Krishna Vepa ,  Paul Miller ,  Ronald Rayandayan ,  Hong Wang

发明人： Raymond Donohoe ,  Krishna Vepa ,  Paul Miller ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US07951718B2

公开(公告)日：2011-05-31

申请号：US12033727

申请日：2008-02-19

申请人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

发明人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： H01L21/302

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US20080138987A1

公开(公告)日：2008-06-12

申请号：US12033727

申请日：2008-02-19

申请人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

发明人： Raymond John Donohoe ,  Krishna Vepa ,  Paul V. Miller ,  Ronald Rayandayan ,  Hong Wang

IPC分类号： H01L21/302

CPC分类号： H01L21/76254 ,  H01L21/02032 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/76251 ,  Y10S438/974

摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.

摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

公开(公告)号：US07456113B2

公开(公告)日：2008-11-25

申请号：US11146574

申请日：2005-06-06

申请人： Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

发明人： Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

IPC分类号： H01L21/461

CPC分类号： H01L21/67051 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02052

摘要： The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide.The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.

摘要翻译： 本发明是在单晶片清洗工艺中使用新型清洗溶液的方法。 根据本发明，该方法包括以单晶片模式使用清洁溶液，并且清洁溶液至少包含氢氧化铵（NH 4 OH），过氧化氢（H 2 N 2 O） > O 2），水（H 2 O 2 O）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 此外，本发明还教导了一种将氨基氢氧化物，过氧化氢和螯合剂步骤与短HF步骤组合的方法，其方法是使整个方法有效地除去铝和铁污染物，而不会蚀刻，从而最小化处理时间 很多氧化物。 单晶片清洗工艺也可以用来提高高品质再生晶片的产量。