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公开(公告)号：US20100249968A1
公开(公告)日：2010-09-30
申请号：US12730969
申请日：2010-03-24
摘要： A method and system for factory resource optimization identification is described herein. In one embodiment, an expected usage rate is determined for a resource in a manufacturing facility and an actual usage rate is determined for the resource in the manufacturing facility. A comparison between the expected usage rate and the actual usage rate is facilitated. A determination is made, based on the comparison, of whether a variance between the expected usage rate and the actual usage rate exceeds a threshold. A notification is provided if the variance exceeds the threshold.
摘要翻译： 本文描述了用于工厂资源优化识别的方法和系统。 在一个实施例中，为制造设施中的资源确定预期使用率，并且确定制造设施中的资源的实际使用率。 预期使用率与实际使用率之间的比较是有利的。 基于比较来确定预期使用率和实际使用率之间的差异是否超过阈值。 如果方差超过阈值，则提供通知。
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公开(公告)号：US20120143574A1
公开(公告)日：2012-06-07
申请号：US13308124
申请日：2011-11-30
IPC分类号： G06F17/10
CPC分类号： G05B19/4187 , G05B2219/45031 , G06Q10/04 , Y02P80/40 , Y02P90/18 , Y02P90/205
摘要： A resource usage optimization server determines a degradation caused by a first resource. The resource usage optimization server determines a cleaning caused by a second resource. The resource usage optimization server calculates a ratio of the degradation and the cleaning.
摘要翻译： 资源使用优化服务器确定由第一资源引起的恶化。 资源使用优化服务器确定由第二资源引起的清理。 资源使用优化服务器计算劣化和清洁的比例。
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公开(公告)号：US08874416B2
公开(公告)日：2014-10-28
申请号：US13308124
申请日：2011-11-30
IPC分类号： G06G7/48 , G05B19/418 , G06Q10/04
CPC分类号： G05B19/4187 , G05B2219/45031 , G06Q10/04 , Y02P80/40 , Y02P90/18 , Y02P90/205
摘要： A resource usage optimization server determines a degradation caused by a first resource. The resource usage optimization server determines a cleaning caused by a second resource. The resource usage optimization server calculates a ratio of the degradation and the cleaning.
摘要翻译： 资源使用优化服务器确定由第一资源引起的恶化。 资源使用优化服务器确定由第二资源引起的清理。 资源使用优化服务器计算劣化和清洁的比例。
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公开(公告)号：US07951718B2
公开(公告)日：2011-05-31
申请号：US12033727
申请日：2008-02-19
IPC分类号： H01L21/302
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/304 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。
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公开(公告)号：US20080138987A1
公开(公告)日：2008-06-12
申请号：US12033727
申请日：2008-02-19
IPC分类号： H01L21/302
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/304 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。
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公开(公告)号：US20090088049A1
公开(公告)日：2009-04-02
申请号：US11863050
申请日：2007-09-27
IPC分类号： B24C1/08
摘要： Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.
摘要翻译： 本发明的实施例描述了通过用介质爆破去除表面膜来回收基底的方法。 提供具有表面膜的基板。 在基板上进行介质喷砂以从表面去除表面膜。 在一个实施例中，介质喷射从基板顶表面去除膜。 在另一个实施例中，介质喷射从基板顶表面和侧表面去除膜。
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公开(公告)号：US07402520B2
公开(公告)日：2008-07-22
申请号：US10998289
申请日：2004-11-26
IPC分类号： H01L21/461
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/304 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。
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公开(公告)号：US20060115986A1
公开(公告)日：2006-06-01
申请号：US10998289
申请日：2004-11-26
申请人： Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
发明人： Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/304 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
摘要翻译： 抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。 在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。 将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。 去除旋涂玻璃，并且转印晶片的前表面被抛光。 去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。
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公开(公告)号：US07775856B2
公开(公告)日：2010-08-17
申请号：US11863050
申请日：2007-09-27
IPC分类号： B24B1/00
摘要： Embodiments of the invention describe a method for reclaiming a substrate by removing surface films with media blasting. A substrate is provided having a surface film. Media blasting is performed on the substrate to remove the surface film from the surface. In one embodiment media blasting removes a film from the substrate top surface. In another embodiment media blasting removes a film from the substrate top surface and side surface.
摘要翻译： 本发明的实施例描述了通过用介质爆破去除表面膜来回收基底的方法。 提供具有表面膜的基板。 在基板上进行介质喷砂以从表面去除表面膜。 在一个实施例中，介质喷射从基板顶表面去除膜。 在另一个实施例中，介质喷射从基板顶表面和侧表面去除膜。
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公开(公告)号：US20070190799A1
公开(公告)日：2007-08-16
申请号：US11737708
申请日：2007-04-19
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A wafer comprising a low-k dielectric layer is refurbished for reuse. Initially, a removable layer is provided on the wafer. The low-k dielectric layer is formed over the removable layer. The overlying low-k dielectric layer is removed from the wafer by etching away the removable layer by at least partially immersing the wafer in an etching solution,. Thereafter, another low-k dielectric layer can be formed over another removable layer.
摘要翻译： 包括低k电介质层的晶片被翻新以重新使用。 最初，在晶片上设置可移除层。 低k电介质层形成在可移除层上。 通过至少部分地将晶片浸入蚀刻溶液中，通过蚀刻去除可去除层而从晶片上去除覆盖的低k电介质层。 此后，可以在另一可移除层上形成另一低k电介质层。
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