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    Method for fabricating photo sensor
    11.
    发明授权
    Method for fabricating photo sensor 有权
    光传感器的制造方法

    公开(公告)号：US07790487B2

    公开(公告)日：2010-09-07

    申请号：US12211106

    申请日：2008-09-16

    Applicant: Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

    Inventor： Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

    IPC: H01L21/00

    CPC classification number: H01L31/095 ,  H01L27/1288 ,  H01L27/14692

    Abstract: A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.

    Abstract translation: 在非晶硅薄膜晶体管板上制造光电传感器的方法包括：形成具有底电极，富硅介电层和顶电极的光传感器，使得光传感器具有高可靠性。 该制造方法与薄膜晶体管的制造工艺兼容。

    PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME
    15.
    发明申请
    PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME 审中-公开
    照片敏感单元和像素结构和液晶显示面板

    公开(公告)号：US20090283772A1

    公开(公告)日：2009-11-19

    申请号：US12405992

    申请日：2009-03-17

    Applicant: An-Thung Cho ,  Wen-Jen Chiang ,  Chia-Tien Peng ,  Chrong-Jung Lin ,  Kun-Chih Lin ,  Ya-Chin King ,  Chih-Wei Chao ,  Feng-Yuan Gan

    Inventor： An-Thung Cho ,  Wen-Jen Chiang ,  Chia-Tien Peng ,  Chrong-Jung Lin ,  Kun-Chih Lin ,  Ya-Chin King ,  Chih-Wei Chao ,  Feng-Yuan Gan

    IPC: H01L33/00

    CPC classification number: H01L27/1446 ,  H01L27/1214 ,  H01L31/153

    Abstract: A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a display unit and a photo sensitive unit. The display unit includes an active device and a pixel electrode. The active device is disposed on the substrate, and the pixel electrode is electrically connected to the active device. The photo sensitive unit includes a photocurrent readout unit, a shielding electrode, a photosensitive dielectric layer, and a transparent electrode. The shielding electrode is electrically connected to the photocurrent readout unit, and the photosensitive dielectric layer is disposed on the shielding electrode. The transparent electrode is disposed on the photosensitive dielectric layer that is interposed between the shielding electrode and the transparent electrode.

    Abstract translation: 提供适合于设置在基板上的像素结构。 像素结构包括显示单元和光敏单元。 显示单元包括有源器件和像素电极。 有源器件设置在衬底上，并且像素电极电连接到有源器件。 光敏单元包括光电流读出单元，屏蔽电极，光敏介电层和透明电极。 屏蔽电极电连接到光电流读出单元，并且光敏介电层设置在屏蔽电极上。 透明电极设置在介于屏蔽电极和透明电极之间的光敏电介质层上。

    METHOD FOR FABRICATING PHOTO SENSOR
    16.
    发明申请
    METHOD FOR FABRICATING PHOTO SENSOR 有权
    制作照相传感器的方法

    公开(公告)号：US20090280606A1

    公开(公告)日：2009-11-12

    申请号：US12211106

    申请日：2008-09-16

    Applicant: Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

    Inventor： Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

    IPC: H01L21/00

    CPC classification number: H01L31/095 ,  H01L27/1288 ,  H01L27/14692

    Abstract: A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.

    Abstract translation: 在非晶硅薄膜晶体管板上制造光电传感器的方法包括：形成具有底电极，富硅介电层和顶电极的光传感器，使得光传感器具有高可靠性。 该制造方法与薄膜晶体管的制造工艺兼容。

    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF
    17.
    发明申请
    PHOTO DETECTOR AND METHOD FOR FORMING THEREOF 有权
    照片检测器及其形成方法

    公开(公告)号：US20080284341A1

    公开(公告)日：2008-11-20

    申请号：US11776559

    申请日：2007-07-12

    Applicant: Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    Inventor： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

    IPC: H01L31/075 ,  H01L31/18 ,  H05B41/36

    CPC classification number: H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

    Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

    Abstract translation: 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

    Method of fabricating polysilicon film by excimer laser crystallization process
    18.
    发明授权
    Method of fabricating polysilicon film by excimer laser crystallization process 有权
    通过准分子激光结晶法制造多晶硅膜的方法

    公开(公告)号：US07071083B2

    公开(公告)日：2006-07-04

    申请号：US10604687

    申请日：2003-08-11

    Applicant: Kun-chih Lin

    Inventor： Kun-chih Lin

    IPC: H01L21/36 ,  H01L21/20

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026

    Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process. First, a substrate comprising a first region and a second region is provided. An amorphous silicon layer and a mask layer are formed on the substrate in sequence. Then, a photo-etching process is performed to remove the mask layer in the first region. A heat-retaining capping layer is formed on the mask layer and the amorphous silicon layer. After that, an excimer laser crystallization process is performed so that the amorphous silicon layer in the first region is crystallized into a polysilicon film.

    Abstract translation: 通过准分子激光结晶法制造多晶硅膜的方法。 首先，提供包括第一区域和第二区域的基板。 依次在基板上形成非晶硅层和掩模层。 然后，进行光蚀刻处理以去除第一区域中的掩模层。 在掩模层和非晶硅层上形成保温覆盖层。 之后，进行准分子激光结晶处理，使得第一区域中的非晶硅层结晶成多晶硅膜。

    Thin film transistor with buffer layer for promoting electron mobility
    19.
    发明授权
    Thin film transistor with buffer layer for promoting electron mobility 有权
    具有缓冲层的薄膜晶体管，用于促进电子迁移率

    公开(公告)号：US06984848B2

    公开(公告)日：2006-01-10

    申请号：US10754060

    申请日：2004-01-07

    Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

    Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

    IPC: H01L29/04

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

    Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

    Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

    Method of fabricating polysilicon film by excimer laser crystallization process
    20.
    发明授权
    Method of fabricating polysilicon film by excimer laser crystallization process 有权
    通过准分子激光结晶法制造多晶硅膜的方法

    公开(公告)号：US06964831B2

    公开(公告)日：2005-11-15

    申请号：US10604485

    申请日：2003-07-25

    Applicant: Kun-chih Lin

    Inventor： Kun-chih Lin

    IPC: G03F9/00 ,  H01L21/20 ,  H01L21/336 ,  H01L23/544 ,  H01L29/786 ,  G03C5/00

    CPC classification number: H01L21/02686 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L23/544 ,  H01L29/6675 ,  H01L29/78672 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S430/146 ,  H01L2924/00

    Abstract: A method of fabricating a polysilicon film by an excimer laser crystallization process is disclosed. First, a substrate with a first region, a second region surrounding the first region, and a third region is provided. An amorphous silicon film is formed on the substrate. A photo-etching process is performed to remove parts of amorphous silicon film in the third region to form an alignment mark. Then, a mask layer is formed on the amorphous silicon film and a second photo-etching process is performed to remove the mask layer in the first region to expose the amorphous silicon film in the first region. After that, an excimer laser irradiation process is performed so that the amorphous silicon film in the first region is crystallized and becomes a polysilicon film.

    Abstract translation: 公开了一种通过准分子激光结晶方法制造多晶硅膜的方法。 首先，提供具有第一区域的基板，围绕第一区域的第二区域和第三区域。 在基板上形成非晶硅膜。 执行光蚀刻工艺以去除第三区域中的非晶硅膜的部分以形成对准标记。 然后，在非晶硅膜上形成掩模层，进行第二光蚀刻工艺以去除第一区域中的掩模层，以暴露第一区域中的非晶硅膜。 之后，进行准分子激光照射处理，使得第一区域中的非晶硅膜结晶化，成为多晶硅膜。

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