公开(公告)号：US07826571B2

公开(公告)日：2010-11-02

申请号：US11543387

申请日：2006-10-05

Applicant: Jae-Kwon Kim ,  Yung-Soo Kim ,  Cheol-Woo You ,  Sung-Kwon Hong ,  Mazzarese David ,  Soong-Yoon Choi ,  Gun-Chul Hwang

Inventor： Jae-Kwon Kim ,  Yung-Soo Kim ,  Cheol-Woo You ,  Sung-Kwon Hong ,  Mazzarese David ,  Soong-Yoon Choi ,  Gun-Chul Hwang

IPC: H04L1/02

CPC classification number: H04B7/04 ,  H04L25/03006

Abstract: Detection of a signal in a receiver of a MIMO communication system includes a transmitter for signals transmission via K antennas and a receiver for receiving the signals via L reception antennas, such that L is greater than or equal to K and the system has a K×L-dimensional channel matrix, by converting the channel matrix into a plurality of matrixes having an upper triangle structure; dividing each of the matrixes into at least two sub-matrixes having a dimension lower than that of the channel matrix; detecting transmission symbols from corresponding antennas through decoding of a) lowest sub-matrix signal received which sub-matrix is constituted of components having only the channel characteristics of two antennas among the two sub-matrixes; and b) an upper sub-matrix signal using the transmission symbols; and outputting all of the detected transmission symbols, if transmission symbols by a highest sub-matrix among at least two sub-matrixes are detected.

Abstract translation: MIMO通信系统的接收机中的信号的检测包括用于经由K个天线的信号传输的发射机和用于经由L个接收天线接收信号的接收机，使得L大于或等于K，并且系统具有K× 通过将信道矩阵转换成具有上三角形结构的多个矩阵来生成L维信道矩阵; 将每个矩阵划分成具有小于信道矩阵的维度的至少两个子矩阵; 通过对所接收到的最小子矩阵信号进行解码来检测来自相应天线的传输符号，哪个子矩阵由仅具有两个子矩阵中的两个天线的信道特性的分量构成; 以及b）使用所述发送符号的上部子矩阵信号; 并且如果检测到在至少两个子矩阵中的最高子矩阵的传输符号，则输出所有检测到的传输符号。

公开(公告)号：US07814391B2

公开(公告)日：2010-10-12

申请号：US12399886

申请日：2009-03-06

Applicant: Young Woo Yun ,  Ki Jun Kim ,  Sung Lark Kwon ,  Young Jo Lee ,  Sung Kwon Hong

Inventor： Young Woo Yun ,  Ki Jun Kim ,  Sung Lark Kwon ,  Young Jo Lee ,  Sung Kwon Hong

IPC: H03M13/00

CPC classification number: H04L1/0071 ,  H03M13/11 ,  H03M13/271 ,  H03M13/2792 ,  H03M13/2903 ,  H03M13/2957 ,  H03M13/6362 ,  H03M13/6368 ,  H03M13/6375 ,  H03M13/6381 ,  H03M13/6508 ,  H04L1/0041 ,  H04L1/0066 ,  H04L1/0069 ,  H04L1/08 ,  H04W88/181

Abstract: A rate matching method is provided for a mobile communication system that performs an adjustment to a code rate based on an optimal level by puncturing or repetition to respective bit streams of transport channels. The rate matching method is preferably applicable to uplink and downlink rate matching for channel coding including turbo coding, convolutional coding and the like. The rate matching method for uplink can include executing coding for bits of a transport channel, and branching off the bits into a plurality of sequences, constructing a first interleaving pattern for the plurality of sequences, constructing a virtual interleaving pattern for at least one sequence based on a mapping rule with a corresponding first interleaving pattern and calculating different bit shifting values in each column of each virtual interleaving pattern. Then, a bit position to be punctured is determined in each constructed virtual interleaving pattern using the calculated bit shifting values.

公开(公告)号：US07795123B2

公开(公告)日：2010-09-14

申请号：US12345832

申请日：2008-12-30

Applicant: Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

Inventor： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/28035 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/4925

Abstract: The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH4) gas and nitrous oxide (N2O) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.

Abstract translation: 本发明公开了一种形成栅电极的方法，根据本发明的方法包括以下步骤：使用硅烷（SiH4）气和一氧化二氮（N2O）气形成下一非晶硅层; 在所述下部非晶硅层上形成上部非晶硅层; 并通过热过程使下部和上部非晶硅层结晶。

公开(公告)号：USRE41590E1

公开(公告)日：2010-08-24

申请号：US12059996

申请日：2008-03-31

Applicant: Young Woo Yun ,  Sung Kwon Hong ,  Sung Lark Kwon ,  Young Jo Lee ,  Ki Jun Kim

Inventor： Young Woo Yun ,  Sung Kwon Hong ,  Sung Lark Kwon ,  Young Jo Lee ,  Ki Jun Kim

IPC: H03M13/03

CPC classification number: H04L1/0069 ,  H04L1/004

Abstract: A method for matching a rate in a mobile communication system causes puncturing or repetition in a fixed pattern, in which puncturing or repetition is applied to each bitstream on transport channels supporting different services in a next generation mobile communication system of the W-CDMA (Wideband Code Division Multiple Access) system. The method comprises the steps of (1) subjecting a bitstream on a transport channel for use in supporting a particular service to channel coding, (2) determining an initial error offset value for use in avoiding all the puncturing only in a particular bitstream among one or more than one bitstreams produced by the channel coding, (3) periodically subtracting a decrement from the determined initial error offset value, for puncturing a bit at a relevant position when a result of the subtraction satisfies a puncturing condition, (4) adding an update error parameter determined as the maximum bit size among TF (Transport Format) transportable during one TTI (Transport Time Interval) of the transport channel after the puncturing to a result of the subtraction, for updating an initial error offset value, and (5) periodically subtracting a decrement from the updated initial error offset value, for determining a position of a relevant bit to be punctured at the next time.

公开(公告)号：US07746815B2

公开(公告)日：2010-06-29

申请号：US11526125

申请日：2006-09-22

Applicant: Basak Can ,  Hiroyuki Yomo ,  Elisabeth de Carvalho ,  Kathiravetpillai Sivanesan ,  Do-Young Kim ,  Marcos Daniel Katz ,  Dong-Seek Park ,  Sung-Kwon Hong

Inventor： Basak Can ,  Hiroyuki Yomo ,  Elisabeth de Carvalho ,  Kathiravetpillai Sivanesan ,  Do-Young Kim ,  Marcos Daniel Katz ,  Dong-Seek Park ,  Sung-Kwon Hong

IPC: H04J3/08

CPC classification number: H04L27/2608 ,  H04B7/026 ,  H04B7/15557 ,  H04L1/20 ,  H04L25/247

Abstract: A hybrid forwarding apparatus and method for cooperative relaying in an OFDM network are provided. In a hybrid forwarding apparatus in a relay terminal, a forwarding scheme selector selects a forwarding scheme for transmission. An amplify and forward (AF) block amplifies data received from the forwarding scheme selector, if an AF scheme is selected. A decode and forward (DF) block decodes and encodes data received from the forwarding scheme selector, if a DF scheme is selected. A multiplexer provides the output data of the AF block and the DF block to an OFDM modulator.

Abstract translation: 提供了一种用于OFDM网络中的协同中继的混合转发装置和方法。 在中继终端的混合转发装置中，转发方案选择器选择用于传输的转发方案。 如果选择了AF方案，则放大和转发（AF）块放大从转发方案选择器接收的数据。 如果选择DF方案，解码和转发（DF）块对从转发方案选择器接收的数据进行解码和编码。 复用器将AF块和DF块的输出数据提供给OFDM调制器。

公开(公告)号：US07741170B2

公开(公告)日：2010-06-22

申请号：US11264028

申请日：2005-11-02

Applicant: Kwon Hong ,  Kwan-Yong Lim

Inventor： Kwon Hong ,  Kwan-Yong Lim

IPC: H01L21/8238

CPC classification number: H01L21/28273 ,  H01L29/513 ,  H01L29/7881

Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

Abstract translation: 提供了一种非易失性存储器件中的电介质结构及其制造方法。 介电结构包括：第一氧化物层; 形成在所述第一氧化物层上的第一高k电介质膜，其中所述第一高k电介质膜包括介电常数约为9或更高的材料和至少两种所述材料的化合物中的一种; 以及形成在第一高k电介质膜上的第二氧化物层。

公开(公告)号：US07648923B2

公开(公告)日：2010-01-19

申请号：US11963907

申请日：2007-12-24

Applicant: Eun-Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

Inventor： Eun-Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC: H01L21/31

CPC classification number: H01L21/3144 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/02337 ,  H01L27/11517

Abstract: A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer.

Abstract translation: 公开了一种制造闪速存储器件的方法。 该方法包括在半导体衬底上形成第一绝缘层; 在所述半导体衬底和所述第一绝缘层之间的界面处积累氮以在所述界面处形成第二绝缘层; 以及将氧注入到所述第二绝缘层中，以将所述第二绝缘层转换成第三绝缘层。

公开(公告)号：US20090166711A1

公开(公告)日：2009-07-02

申请号：US12345617

申请日：2008-12-29

Applicant: Kwon Hong

Inventor： Kwon Hong

IPC: H01L29/88 ,  H01L21/70

CPC classification number: H01L29/513 ,  H01L21/28273 ,  H01L21/3144

Abstract: The present invention discloses a tunnel insulating layer in a flash memory device and a method of forming the same, the method according to the present invention comprises the steps of forming a first oxide layer on a semiconductor substrate through a first oxidation process; forming a nitride layer on an interface between the semiconductor substrate and the first oxide layer through a first nitridation process; forming a second nitride layer on the first oxide layer through a second nitridation process; forming a second oxide layer on the second nitride layer through a second oxidation process; and forming a third nitride layer on the second oxide layer through a third nitridation process.

Abstract translation: 本发明公开了闪速存储器件中的隧道绝缘层及其形成方法，根据本发明的方法包括以下步骤：通过第一氧化工艺在半导体衬底上形成第一氧化物层; 通过第一氮化工艺在所述半导体衬底和所述第一氧化物层之间的界面上形成氮化物层; 通过第二氮化工艺在所述第一氧化物层上形成第二氮化物层; 通过第二氧化工艺在所述第二氮化物层上形成第二氧化物层; 以及通过第三次氮化处理在所述第二氧化物层上形成第三氮化物层。

公开(公告)号：US20090098738A1

公开(公告)日：2009-04-16

申请号：US11963907

申请日：2007-12-24

Applicant: Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

Inventor： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC: H01L21/314

CPC classification number: H01L21/3144 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/02337 ,  H01L27/11517

Abstract: A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer.

Abstract translation: 公开了一种制造闪速存储器件的方法。 该方法包括在半导体衬底上形成第一绝缘层; 在所述半导体衬底和所述第一绝缘层之间的界面处积累氮以在所述界面处形成第二绝缘层; 以及将氧注入到所述第二绝缘层中，以将所述第二绝缘层转换成第三绝缘层。

公开(公告)号：US07480341B2

公开(公告)日：2009-01-20

申请号：US11253398

申请日：2005-10-19

Applicant: Su-Ryong Jeong ,  Seok-Hyun Yoon ,  Sung-Kwon Hong ,  Young-Kwon Cho ,  Chang-Ho Suh

Inventor： Su-Ryong Jeong ,  Seok-Hyun Yoon ,  Sung-Kwon Hong ,  Young-Kwon Cho ,  Chang-Ho Suh

IPC: H04B7/02 ,  H04L1/02

CPC classification number: H04B7/0626 ,  H04B7/0417 ,  H04B7/061 ,  H04L1/0003 ,  H04L1/0009 ,  H04L1/0026 ,  H04L1/0656 ,  H04L25/0206 ,  H04L27/34

Abstract: A transmitting and receiving apparatus and method for optimizing performance of an adaptive modulation and coding (AMC) in a multiple input and multiple output antenna (MIMO) communication system. When the AMC is applied to the MIMO system, the optimal scheme is different depending on the MIMO channel situation, the maximum transmission power, and the maximum modulation order. The transmitting apparatus includes an ordering selector that selects a successive interference cancellation (SIC) scheme in order to obtain a maximum MIMO-AMC performance, and the receiving apparatus includes a channel quality information (CQI) generator corresponding to the SIC scheme selected at the transmitting apparatus.

Abstract translation: 一种用于优化多输入和多输出天线（MIMO）通信系统中的自适应调制和编码（AMC）的性能的发射和接收装置和方法。 当将AMC应用于MIMO系统时，根据MIMO信道情况，最大发射功率和最大调制次数，最优方案是不同的。 发送装置包括排序选择器，其选择连续的干扰消除（SIC）方案以获得最大的MIMO-AMC性能，并且接收装置包括对应于在发送时选择的SIC方案的信道质量信息（CQI）生成器 仪器。