公开(公告)号：US08450213B2

公开(公告)日：2013-05-28

申请号：US13086021

申请日：2011-04-13

Applicant: Gregory De Brabander ,  Mark Nepomnishy

Inventor： Gregory De Brabander ,  Mark Nepomnishy

IPC: H01L21/308

CPC classification number: H01L41/053 ,  B41J2/14209 ,  B41J2/14233 ,  B41J2/1609 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14266 ,  H01L29/06 ,  H01L41/098 ,  H01L41/331

Abstract: Processes for making a membrane having a curved feature are disclosed. Recesses each in the shape of a reversed, truncated pyramid are formed in a planar substrate surface by KOH etching through a mask. An oxide layer is formed over the substrate surface. The oxide layer can be stripped leaving rounded corners between different facets of the recesses in the substrate surface, and the substrate surface can be used as a profile-transferring substrate surface for making a membrane having concave curved features. Alternatively, a handle layer is attached to the oxide layer and the substrate is removed until the backside of the oxide layer becomes exposed. The exposed backside of the oxide layer includes curved portions protruding away from the handle layer, and can provide a profile-transferring substrate surface for making a membrane having convex curved features.

公开(公告)号：US08404132B2

公开(公告)日：2013-03-26

申请号：US13077154

申请日：2011-03-31

Applicant: Gregory De Brabander ,  Mark Nepomnishy

Inventor： Gregory De Brabander ,  Mark Nepomnishy

IPC: B32B37/02 ,  B32B38/10 ,  B32B37/06 ,  B32B37/14 ,  C23F1/00

CPC classification number: B81B3/0021 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/053 ,  B81C2201/0195 ,  B81C2203/036

Abstract: Processes for making a membrane having a curved feature are disclosed. A profile-transferring substrate surface having a curved feature is created by vacuum bonding a membrane to a top surface of a substrate, where the top surface has a cavity formed therein. The surface of the membrane is exposed to a fluid pressure such that the membrane deforms and the undersurface of the membrane touches the bottom of the cavity. The curved feature formed in the deformed membrane can be made permanent by annealing the bonding areas between membrane and substrate. A uniform layer of material deposited over the exposed surface of the membrane will include a curved feature at the location where the membrane has bent into the cavity. After at least one layer of material has been uniformed deposited on the membrane, the cavity can be etched open from the bottom to remove the membrane from the underside.

Abstract translation: 公开了制造具有弯曲特征的膜的方法。 具有弯曲特征的轮廓转印衬底表面是通过将膜真空粘合到衬底的顶表面而形成的，其中顶表面形成有空腔。 膜的表面暴露于流体压力，使得膜变形并且膜的下表面接触腔的底部。 形成在变形的膜中的弯曲特征可以通过退火膜和基底之间的结合区域而被永久化。 沉积在膜的暴露表面上的均匀的材料层将在膜已经弯曲到腔中的位置处包括弯曲特征。 在将至少一层材料均匀地沉积在膜上之后，可以从底部刻蚀空腔以从下侧去除膜。

公开(公告)号：US20130052826A1

公开(公告)日：2013-02-28

申请号：US13221702

申请日：2011-08-30

Applicant: Mark Nepomnishy ,  Shinya Sugimoto ,  Yasuhisa Kaneko

Inventor： Mark Nepomnishy ,  Shinya Sugimoto ,  Yasuhisa Kaneko

IPC: H01L21/311

CPC classification number: G21K1/025 ,  G21K1/06 ,  G21K2207/005

Abstract: Semiconductor substrates with high aspect ratio recesses formed therein are described. The high aspect ratio recesses have bottom surface profile characteristics that promote formation of initial growth sites of plated metal as compared to the side surfaces of the recesses. Processes for making and plating the recesses are also disclosed. The metal-plated high aspect ratio recesses can be used as X-ray gratings in Phase Contrast X-ray imaging apparatuses.

Abstract translation: 描述了形成有高纵横比凹槽的半导体衬底。 与纵向凹槽的侧表面相比，高纵横比凹槽具有底表面轮廓特征，促进电镀金属的初始生长位置的形成。 还公开了用于制造和电镀凹槽的工艺。 镀金的高宽比凹槽可用作相位对比X射线成像设备中的X射线光栅。

公开(公告)号：US20110181664A1

公开(公告)日：2011-07-28

申请号：US12695062

申请日：2010-01-27

Applicant: Mark Nepomnishy ,  Gregory De Brabander

Inventor： Mark Nepomnishy ,  Gregory De Brabander

IPC: B41J2/16 ,  H01L21/306

CPC classification number: B41J2/162 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642

Abstract: A method of forming a nozzle plate of a fluid ejection device includes performing a first etch from a first side of a wafer to form a tapered region, forming an oxide layer in the tapered region such that a depth of the oxide layer on the tapered walls is greater than a depth of the oxide layer on the floor, performing a second etch from the first side to remove the oxide layer from the floor and a portion of the oxide layer from the tapered wall, and performing a third etch from the first side to form an outlet passage having a straight wall.

Abstract translation: 形成流体喷射装置的喷嘴板的方法包括从晶片的第一侧进行第一蚀刻以形成锥形区域，在锥形区域中形成氧化物层，使得锥形壁上的氧化物层的深度 大于地板上的氧化物层的深度，从第一侧进行第二次蚀刻，从底部除去氧化物层和从锥形壁去除一部分氧化物层，并从第一侧进行第三次蚀刻 以形成具有直壁的出口通道。

公开(公告)号：US08641171B2

公开(公告)日：2014-02-04

申请号：US13484117

申请日：2012-05-30

Applicant: Gregory DeBrabander ,  Mark Nepomnishy

Inventor： Gregory DeBrabander ,  Mark Nepomnishy

IPC: B41J2/135

CPC classification number: B41J2/161 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00087

Abstract: Fluid ejection nozzles having a tapered section leading to a straight walled bore are described. Both the tapered section of the nozzle and the straight walled bore are formed from a single side of semiconductor layer so that the tapered section and the bore are aligned with one another, even when an array of nozzles are formed across a die and multiple dies are formed on a semiconductor substrate.

Abstract translation: 描述了具有导向直壁的锥形部分的流体喷射嘴。 喷嘴的锥形部分和直壁孔均由半导体层的单侧形成，使得锥形部分和孔彼此对准，即使在模具之间形成喷嘴阵列并且多个模具是 形成在半导体衬底上。

公开(公告)号：US08567910B2

公开(公告)日：2013-10-29

申请号：US12752062

申请日：2010-03-31

Applicant: Mark Nepomnishy ,  Gregory De Brabander ,  Andreas Bibl

Inventor： Mark Nepomnishy ,  Gregory De Brabander ,  Andreas Bibl

IPC: B41J2/14 ,  G01D15/00 ,  G11B5/127

CPC classification number: H01L29/66007 ,  B41J2/1606 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1642

Abstract: A method of forming a nozzle plate of a fluid ejection device includes etching a bore in the first side of the multi-layer substrate, depositing a liner in the bore, removing a layer from a second side of the multi-layer substrate, wherein the removing exposes a closed end of the liner, applying a non-wetting coating to the closed end of the liner and an area surrounding the closed end of the liner, and removing the closed end of the liner, wherein removing the closed end of the liner opens a nozzle.

Abstract translation: 形成流体喷射装置的喷嘴板的方法包括蚀刻多层基板的第一侧中的孔，在孔中沉积衬垫，从多层衬底的第二侧移除层，其中 去除暴露衬套的封闭端，将不湿润涂层施加到衬垫的封闭端和围绕衬套封闭端的区域，以及去除衬套的封闭端，其中移除衬套的封闭端 打开一个喷嘴。

公开(公告)号：US08551692B1

公开(公告)日：2013-10-08

申请号：US13460503

申请日：2012-04-30

Applicant: Gregory De Brabander ,  Mark Nepomnishy ,  John A. Higginson

Inventor： Gregory De Brabander ,  Mark Nepomnishy ,  John A. Higginson

IPC: B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/14233 ,  B41J2/162 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2002/14475 ,  B41J2202/11

Abstract: Techniques are provided for making a funnel-shaped nozzle in a semiconductor substrate. The funnel-shaped recess includes a straight-walled bottom portion and a curved top portion having a curved sidewall gradually converging toward and smoothly joined to the straight-walled bottom portion, and the curved top portion encloses a volume that is substantially greater than a volume enclosed by the straight-walled bottom portion.

Abstract translation: 提供了在半导体衬底中制作漏斗形喷嘴的技术。 漏斗状凹部包括直壁的底部部分和弯曲的顶部部分，该弯曲的顶部部分具有朝向并顺利地连接到直壁底部的弯曲侧壁，并且弯曲的顶部部分包围大体积大于体积的体积 由直壁底部包围。

公开(公告)号：US20120262029A1

公开(公告)日：2012-10-18

申请号：US13086021

申请日：2011-04-13

Applicant: Gregory De Brabander ,  Mark Nepomnishy

Inventor： Gregory De Brabander ,  Mark Nepomnishy

IPC: H01L41/04 ,  H01L29/06 ,  H01L21/308

CPC classification number: H01L41/053 ,  B41J2/14209 ,  B41J2/14233 ,  B41J2/1609 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14266 ,  H01L29/06 ,  H01L41/098 ,  H01L41/331

Abstract: Processes for making a membrane having a curved feature are disclosed. Recesses each in the shape of a reversed, truncated pyramid are formed in a planar substrate surface by KOH etching through a mask. An oxide layer is formed over the substrate surface. The oxide layer can be stripped leaving rounded corners between different facets of the recesses in the substrate surface, and the substrate surface can be used as a profile-transferring substrate surface for making a membrane having concave curved features. Alternatively, a handle layer is attached to the oxide layer and the substrate is removed until the backside of the oxide layer becomes exposed. The exposed backside of the oxide layer includes curved portions protruding away from the handle layer, and can provide a profile-transferring substrate surface for making a membrane having convex curved features.

Abstract translation: 公开了制造具有弯曲特征的膜的方法。 通过通过掩模的KOH蚀刻，在平面基板表面中形成各自呈倒棱锥形的凹陷。 在衬底表面上形成氧化物层。 可以剥离氧化物层，在衬底表面中的凹槽的不同面之间留下圆角，并且衬底表面可以用作用于制造具有凹曲面特征的膜的轮廓转移衬底表面。 或者，将手柄层附接到氧化物层，并且去除衬底直到氧化物层的背面露出。 氧化物层的暴露背面包括远离手柄层突出的弯曲部分，并且可以提供用于制造具有凸形弯曲特征的膜的轮廓转移衬底表面。

公开(公告)号：US20120252221A1

公开(公告)日：2012-10-04

申请号：US13077531

申请日：2011-03-31

Applicant: Gregory De Brabander ,  Mark Nepomnishy

Inventor： Gregory De Brabander ,  Mark Nepomnishy

IPC: H01L21/3065

CPC classification number: B81C1/00103 ,  B81B2201/0257 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0353 ,  B81B2203/0376

Abstract: Processes for making a profile-transferring substrate surface and membranes having curved features are disclosed. A profile-transferring substrate surface having a curved feature is created by isotropic plasma etching through a shadow mask. The shadow mask has a through hole which has a lower portion adjacent to the bottom surface of the shadow mask and an upper portion that is above and narrower than the lower portion. The isotropic plasma etching through the shadow mask can create a curved dent in a planar substrate in a central portion of an area enclosed by the bottom opening. After the shadow mask is removed. A uniform layer of material deposited over the exposed surface of the substrate will include a curved feature at the location of the curved dent in the substrate surface.

Abstract translation: 公开了用于制造轮廓转印衬底表面的工艺和具有弯曲特征的膜。 通过荫罩的各向同性等离子体蚀刻产生具有弯曲特征的轮廓转印衬底表面。 荫罩具有通孔，该通孔具有与荫罩的底面相邻的下部，上部比下部窄。 通过荫罩的各向同性等离子体蚀刻可以在由底部开口包围的区域的中心部分中的平面基板中产生弯曲的凹陷。 阴影面具被删除后。 沉积在基板的暴露表面上的均匀的材料层将在基板表面中的弯曲凹陷的位置处包括弯曲特征。

公开(公告)号：US20120248063A1

公开(公告)日：2012-10-04

申请号：US13077154

申请日：2011-03-31

Applicant: Gregory De Brabander ,  Mark Nepomnishy

Inventor： Gregory De Brabander ,  Mark Nepomnishy

IPC: B32B37/02 ,  C23F1/00 ,  B32B38/10 ,  B32B37/06 ,  B32B37/14

CPC classification number: B81B3/0021 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2203/053 ,  B81C2201/0195 ,  B81C2203/036

Abstract: Processes for making a membrane having a curved feature are disclosed. A profile-transferring substrate surface having a curved feature is created by vacuum bonding a membrane to a top surface of a substrate, where the top surface has a cavity formed therein. The surface of the membrane is exposed to a fluid pressure such that the membrane deforms and the undersurface of the membrane touches the bottom of the cavity. The curved feature formed in the deformed membrane can be made permanent by annealing the bonding areas between membrane and substrate. A uniform layer of material deposited over the exposed surface of the membrane will include a curved feature at the location where the membrane has bent into the cavity. After at least one layer of material has been uniformed deposited on the membrane, the cavity can be etched open from the bottom to remove the membrane from the underside.

Abstract translation: 公开了制造具有弯曲特征的膜的方法。 具有弯曲特征的轮廓转印衬底表面是通过将膜真空粘合到衬底的顶表面而形成的，其中顶表面形成有空腔。 膜的表面暴露于流体压力，使得膜变形并且膜的下表面接触腔的底部。 形成在变形的膜中的弯曲特征可以通过退火膜和基底之间的结合区域而被永久化。 沉积在膜的暴露表面上的均匀的材料层将在膜已经弯曲到腔中的位置处包括弯曲特征。 在将至少一层材料均匀地沉积在膜上之后，可以从底部刻蚀空腔以从下侧去除膜。