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公开(公告)号：US11651977B2
公开(公告)日：2023-05-16
申请号：US17217019
申请日：2021-03-30
Inventor： Shanyu Wang , Chun Yan
IPC: H01L21/3065 , H01L21/67 , H01J37/32 , H01L21/3213 , H01L21/02
CPC classification number: H01L21/67069 , H01J37/321 , H01J37/32357 , H01J37/32449 , H01J37/32788 , H01L21/02071 , H01L21/32136 , H01J2237/334
Abstract: Methods for processing a workpiece are provided. Conducting a thermal treatment on a workpiece are provided. The workpiece contains at least one layer of metal. The method can include generating one or more species from a process gas. The process gas can include hydrogen or deuterium. The method can include filtering the one or more species to create a filtered mixture and exposing the workpiece to the filtered mixture. An oxidation process on a workpiece are provided. The method can be conducted at a process temperature of less than 350° C.
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公开(公告)号：US20230091035A1
公开(公告)日：2023-03-23
申请号：US17994985
申请日：2022-11-28
Inventor： Martin L. Zucker , Peter J. Lembesis , Ted Tevis , Ryan M. Pakulski , Michael X. Yang
IPC: H01J37/32 , H01L21/677 , H01L21/68 , B25J11/00 , B25J15/00 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/02
Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.
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公开(公告)号：US20230005772A1
公开(公告)日：2023-01-05
申请号：US17489226
申请日：2021-09-29
Inventor： Mengyang Xin , Fei Yu , Gonglin Luo
IPC: H01L21/677 , H01L21/687 , B25J19/00
Abstract: The present disclosure provides a transfer apparatus and a processing system. The transfer apparatus includes a first transfer assembly configured to transfer a first workpiece to a chamber. The transfer apparatus includes a second transfer assembly configured to transfer a second workpiece from the chamber. The transfer apparatus includes an isolation assembly disposed between the first transfer assembly and the second transfer assembly and configured to isolate energy transfer between the first workpiece and the second workpiece. The transfer apparatus further includes a support assembly configured to restrict the isolation assembly between the first transfer assembly and the second transfer assembly.
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公开(公告)号：US11521847B2
公开(公告)日：2022-12-06
申请号：US16861345
申请日：2020-04-29
Inventor： Michael X. Yang , Christian Pfahler , Alexandr Cosceev
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.
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公开(公告)号：US20220223405A1
公开(公告)日：2022-07-14
申请号：US17706090
申请日：2022-03-28
Inventor： Shuang Meng , Shawming Ma , Michael X. Yang
Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.
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Patent Agency Ranking
公开(公告)号：US20220187021A1
公开(公告)日：2022-06-16
申请号：US17546497
申请日：2021-12-09
Inventor： Manuel Sohn , Alex Wansidler , Dieter Hezler , Joseph Cibere , Rolf Bremensdorfer , Martin Zucker , Pete Lembesis , Michael Yang
Abstract: A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a rotation system configured to rotate the workpiece support, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more gas exhaust ports for removing gas from the processing chamber such that a vacuum pressure can be maintained, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.
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公开(公告)号：US11276560B2
公开(公告)日：2022-03-15
申请号：US17001751
申请日：2020-08-25
Inventor： Tsai Wen Sung , Chun Yan , Michael X. Yang
IPC: H01J37/32 , H01L21/311
Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.
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公开(公告)号：US20220059363A1
公开(公告)日：2022-02-24
申请号：US17405142
申请日：2021-08-18
Inventor： Manuel Sohn , Rolf Bremensdorfer , Dieter Hezler
IPC: H01L21/324 , H01L21/66 , H01L21/67
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.
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公开(公告)号：US11257696B2
公开(公告)日：2022-02-22
申请号：US16782110
申请日：2020-02-05
Inventor： Michael Yang , Ryan Pakulski
IPC: H01L21/67 , H01L21/677
Abstract: Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The plasma processing system can include a loadlock chamber. The loadlock chamber can include a workpiece column configured to support a plurality of workpieces in a stacked arrangement. The system can further include at least two process chambers. The at least two process chambers can have at least two processing stations. Each processing station can have a workpiece support for supporting a workpiece during processing in the process chamber. The system further includes a transfer chamber in process flow communication with the loadlock chamber and the process chamber. The transfer chamber includes a rotary robot. The rotary robot can be configured to transfer a plurality of workpieces from the stacked arrangement in the loadlock chamber to the at least two processing stations.
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公开(公告)号：US11257680B2
公开(公告)日：2022-02-22
申请号：US17001728
申请日：2020-08-25
Inventor： Qi Zhang , Xinliang Lu
IPC: H01L21/3065 , H01J37/32 , G03F7/42
Abstract: Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.
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