公开(公告)号：US20130320410A1

公开(公告)日：2013-12-05

申请号：US13484047

申请日：2012-05-30

Applicant: Jr-Jung Lin ,  Chih-Han Lin ,  Jin-Aun Ng ,  Ming-Ching Chang ,  Chao-Cheng Chen

Inventor： Jr-Jung Lin ,  Chih-Han Lin ,  Jin-Aun Ng ,  Ming-Ching Chang ,  Chao-Cheng Chen

IPC: H01L29/78 ,  H01L21/283

CPC classification number: H01L29/78 ,  H01L21/283 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/66545

Abstract: The invention relates to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first rectangular gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first rectangular gate electrode; and a second dielectric material adjacent to the other 3 sides of the first rectangular gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first rectangular gate electrode.

Abstract translation: 本发明涉及集成电路制造，更具体地涉及金属栅电极。 半导体器件的示例性结构包括：包括主表面的衬底; 主表面上的第一矩形栅电极，包括第一层多层材料; 与第一矩形栅电极的一侧相邻的第一电介质材料; 以及与所述第一矩形栅电极的其他3侧相邻的第二电介质材料，其中所述第一电介质材料和所述第二电介质材料共同围绕所述第一矩形栅电极。

公开(公告)号：US08507979B1

公开(公告)日：2013-08-13

申请号：US13563470

申请日：2012-07-31

Applicant: Yuan-Sheng Huang ,  Ming-Ching Chang ,  Chao-Cheng Chen

Inventor： Yuan-Sheng Huang ,  Ming-Ching Chang ,  Chao-Cheng Chen

IPC: H01L29/66

CPC classification number: H01L29/4966 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/78

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a semiconductor substrate and forming a gate trench therein. The method also includes filling in the gate trench partially with a work-function (WF) metal stack, and filling in the remaining gate trench with a dummy-filling-material (DFM) over the WF metal stack. A sub-gate trench is formed by etching-back the WF metal stack in the gate trench, and is filled with an insulator cap to form an isolation region in the gate trench. The DFM is fully removed to from a MG-center trench (MGCT) in the gate trench, which is filled with a fill metal.

Abstract translation: 公开了制造半导体集成电路（IC）的方法。 该方法包括提供半导体衬底并在其中形成栅极沟槽。 该方法还包括用工作功能（WF）金属堆叠部分地填充栅极沟槽，并且在WF金属堆叠上用虚拟填充材料（DFM）填充剩余的栅极沟槽。 通过蚀刻在栅极沟槽中的WF金属堆叠形成子栅极沟槽，并且填充有绝缘体帽以在栅极沟槽中形成隔离区域。 DFM从栅极沟槽中的MG-中心沟槽（MGCT）被完全去除，其填充有填充金属。

公开(公告)号：US20130138499A1

公开(公告)日：2013-05-30

申请号：US13308386

申请日：2011-11-30

Applicant: Peter Henry Tu ,  Mark Lewis Grabb ,  Xiaoming Liu ,  Ting Yu ,  Yi Yao ,  Dashan Gao ,  Ming-Ching Chang

Inventor： Peter Henry Tu ,  Mark Lewis Grabb ,  Xiaoming Liu ,  Ting Yu ,  Yi Yao ,  Dashan Gao ,  Ming-Ching Chang

IPC: G06Q30/02

Abstract: An advertising system is disclosed. In one embodiment, the system includes an advertising display configured to provide an advertisement to potential customers and a camera configured to capture images of the potential customers when the potential customers pass the advertising display. The system may also include an image processing system having a processor and a memory. The memory may include application instructions for execution by the processor, and the image processing system may be configured to execute the application instructions to derive usage characteristics of the potential customers with respect to the advertising display through analysis of the captured images. Additional methods, systems, and articles of manufacture are also disclosed.

Abstract translation: 公开了广告系统。 在一个实施例中，系统包括被配置为向潜在客户提供广告的广告显示器和被配置为当潜在客户通过广告显示时捕获潜在客户的图像的照相机。 该系统还可以包括具有处理器和存储器的图像处理系统。 存储器可以包括用于由处理器执行的应用指令，并且图像处理系统可以被配置为执行应用指令以通过分析所捕获的图像来导出相对于广告显示的潜在客户的使用特性。 还公开了附加的方法，系统和制品。

公开(公告)号：US20100203734A1

公开(公告)日：2010-08-12

申请号：US12370152

申请日：2009-02-12

Applicant: Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

Inventor： Ming-Feng Shieh ,  Shinn-Sheng Yu ,  Anthony Yen ,  Ming-Ching Chang ,  Jeff J. Xu

IPC: H01L21/467

CPC classification number: H01L21/3086 ,  H01L21/3088 ,  H01L21/823828 ,  H01L21/823871 ,  Y10S438/947

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.

Abstract translation: 本公开提供了一种制造半导体器件的方法，该半导体器件包括在衬底上形成掩模层，在掩模层上形成具有第一虚拟特征和第二虚拟特征的虚设层，形成第一和第二间隔物顶部以覆盖顶部 分别形成第一和第二间隔套筒以分别围绕第一和第二虚拟特征的侧面部分，去除第一间隔物顶部和第一虚拟特征，同时保护第二虚拟特征，去除 第一间隔套筒的第一端部和第二端部，以形成间隔件翅片，并且使用间隔件翅片作为第一掩模元件并将第二虚拟特征图案化为掩模层作为第二掩模元件。

公开(公告)号：US08750566B2

公开(公告)日：2014-06-10

申请号：US13403030

申请日：2012-02-23

Applicant: Li Guan ,  Peter Henry Tu ,  Yi Yao ,  Ming-Ching Chang

Inventor： Li Guan ,  Peter Henry Tu ,  Yi Yao ,  Ming-Ching Chang

IPC: G06K9/00 ,  G06K9/32

CPC classification number: G06T7/55 ,  G06T7/97 ,  G06T2207/20228 ,  G06T2207/30244

Abstract: Homography-based imaging apparatus and method are provided. The apparatus may include a processor (44) coupled to process respective sequences of sky images respectively acquired by physical image acquisition devices 181 and 182 at respective spaced apart locations (e.g., P1, P2). The processor may include an image alignment module (32) configured to spatially relate respective views of at least one object (e.g., clouds, aerial vehicles) visible in the respective sequences of the sky images based on homography (42) of at least one astronomical image acquired at each spaced apart location. The astronomical image may include a number of spatial references corresponding to respective astronomical body positions located practically at infinity relative to a respective distance between the spaced apart locations. Further views (synthetic views) may be generated at selectable new locations (e.g., P3, P4, P5, P6), without actually having any physical image acquisition devices at such selectable locations.

Abstract translation: 提供基于成像的成像装置和方法。 该装置可以包括处理器（44），其被处理器（44）耦合以处理在相应的间隔开的位置（例如，P1，P2）处分别由物理图像采集装置181和182获取的天空图像的各个序列。 处理器可以包括图像对准模块（32），其被配置为基于至少一个天文学的同位素（42）空间上关联在天空图像的相应序列中可见的至少一个对象（例如，云，空中飞行器）的各个视图 在每个间隔开的位置获取图像。 天文图像可以包括对应于相对于相对于间隔开的位置之间的相应距离实际上位于无穷远处的相应天文体位置的多个空间参考。 可以在可选择的新位置（例如，P3，P4，P5，P6）处产生进一步视图（合成视图），而在这种可选择位置实际上没有任何物理图像采集装置。

公开(公告)号：US20130309834A1

公开(公告)日：2013-11-21

申请号：US13471649

申请日：2012-05-15

Applicant: Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Yuan-Sheng Huang ,  Ming-Chia Tai ,  Chao-Cheng Chen

Inventor： Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Yuan-Sheng Huang ,  Ming-Chia Tai ,  Chao-Cheng Chen

IPC: H01L21/283 ,  H01L21/02

CPC classification number: H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device, patterning a first hard mask to form a first recess in a high-resistor (Hi-R) stack, removing the first hard mask, forming a second recess in the Hi-R stack, forming a second hard mask in the second recess in the Hi-R stack. A HR can then be formed in the semiconductor substrate by the second hard mask and a gate trench etch.

Abstract translation: 公开了制造半导体集成电路（IC）的方法。 该方法包括接收半导体器件，图案化第一硬掩模以在高电阻（Hi-R）堆叠中形成第一凹槽，去除第一硬掩模，在Hi-R堆叠中形成第二凹槽，形成第二 硬掩模在Hi-R堆叠的第二个凹槽中。 然后可以通过第二硬掩模和栅沟​​槽蚀刻在半导体衬底中形成HR。

公开(公告)号：US20130223676A1

公开(公告)日：2013-08-29

申请号：US13403030

申请日：2012-02-23

Applicant: Li Guan ,  Peter Henry Tu ,  Yi Yao ,  Ming-Ching Chang

Inventor： Li Guan ,  Peter Henry Tu ,  Yi Yao ,  Ming-Ching Chang

IPC: G06K9/00

CPC classification number: G06T7/55 ,  G06T7/97 ,  G06T2207/20228 ,  G06T2207/30244

Abstract: Homography-based imaging apparatus and method are provided. The apparatus may include a processor (44) coupled to process respective sequences of sky images respectively acquired by physical image acquisition devices 181 and 182 at respective spaced apart locations (e.g., P1, P2). The processor may include an image alignment module (32) configured to spatially relate respective views of at least one object (e.g., clouds, aerial vehicles) visible in the respective sequences of the sky images based on homography (42) of at least one astronomical image acquired at each spaced apart location. The astronomical image may include a number of spatial references corresponding to respective astronomical body positions located practically at infinity relative to a respective distance between the spaced apart locations. Further views (synthetic views) may be generated at selectable new locations (e.g., P3, P4, P5, P6), without actually having any physical image acquisition devices at such selectable locations.

Abstract translation: 提供基于成像的成像装置和方法。 该装置可以包括处理器（44），其被处理器（44）耦合以处理在相应的间隔开的位置（例如，P1，P2）处分别由物理图像采集装置181和182获取的天空图像的各个序列。 处理器可以包括图像对准模块（32），其被配置为基于至少一个天文学的同位素（42）空间上关联在天空图像的相应序列中可见的至少一个对象（例如，云，空中飞行器）的各个视图 在每个间隔开的位置获取图像。 天文图像可以包括对应于相对于相对于间隔开的位置之间的相应距离实际上位于无穷远处的相应天文体位置的多个空间参考。 可以在可选择的新位置（例如，P3，P4，P5，P6）处产生其他视图（合成视图），而在这种可选择位置实际上没有任何物理图像采集装置。

公开(公告)号：US08489218B2

公开(公告)日：2013-07-16

申请号：US12905354

申请日：2010-10-15

Applicant: Bing-Hung Chen ,  Ming-Ching Chang

Inventor： Bing-Hung Chen ,  Ming-Ching Chang

IPC: G06F19/00 ,  G06Q10/06 ,  G05B19/418

CPC classification number: G06Q10/06 ,  G05B13/024 ,  G05B13/042 ,  G05B19/41875 ,  G05B2219/45031

Abstract: The present disclosure provides a method of chamber match. The method includes identifying a golden chamber designed operable to implement a semiconductor process; identifying a reference chamber designed operable for the semiconductor process; and extracting a matching index of a processing chamber relative to the golden chamber and the reference chamber using a dynamic variable analysis.

Abstract translation: 本公开提供了室匹配的方法。 该方法包括识别可操作以实现半导体工艺的金室; 识别设计用于半导体工艺的参考室; 以及使用动态变量分析提取处理室相对于黄金室和参考室的匹配指数。

公开(公告)号：US20130054377A1

公开(公告)日：2013-02-28

申请号：US13221896

申请日：2011-08-30

Applicant: Nils Oliver Krahnstoever ,  Peter Henry Tu ,  Ming-Ching Chang ,  Weina Ge

Inventor： Nils Oliver Krahnstoever ,  Peter Henry Tu ,  Ming-Ching Chang ,  Weina Ge

IPC: G06Q30/02 ,  G06K9/00

CPC classification number: G09F27/00

Abstract: An advertising system is disclosed. In one embodiment, the system includes an advertising station including a display and configured to provide advertising content to potential customers via the display and one or more cameras configured to capture images of the potential customers when proximate to the advertising station. The system may also include a data processing system to analyze the captured images to determine gaze directions and body pose directions for the potential customers, and to determine interest levels of the potential customers in the advertising content based on the determined gaze directions and body pose directions. Various other systems, methods, and articles of manufacture are also disclosed.

Abstract translation: 公开了广告系统。 在一个实施例中，系统包括广告站，其包括显示器并且被配置为经由显示器向潜在客户提供广告内容，以及一个或多个照相机，被配置为在靠近广告站时捕获潜在客户的图像。 系统还可以包括数据处理系统，以分析所捕获的图像，以确定潜在客户的凝视方向和身体姿势方向，并且基于确定的凝视方向和身体姿势方向来确定广告内容中的潜在客户的兴趣水平 。 还公开了各种其它系统，方法和制品。

公开(公告)号：US08273632B2

公开(公告)日：2012-09-25

申请号：US13281862

申请日：2011-10-26

Applicant: Yu Chao Lin ,  Ming-Ching Chang ,  Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

Inventor： Yu Chao Lin ,  Ming-Ching Chang ,  Yih-Ann Lin ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC: H01L21/336

CPC classification number: H01L21/32139 ,  H01L21/0276 ,  H01L21/28194 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/823437 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patternable layer over a substrate. The method includes forming a first layer over the patternable layer. The method includes forming a second layer over the first layer. The second layer is substantially thinner than the first layer. The method includes patterning the second layer with a photoresist material through a first etching process to form a patterned second layer. The method includes patterning the first layer with the patterned second layer through a second etching process to form a patterned first layer. The first and second layers have substantially different etching rates during the second etching process. The method includes patterning the patternable layer with the patterned first layer through a third etching process.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成可图案化层。 该方法包括在可图案层上形成第一层。 该方法包括在第一层上形成第二层。 第二层比第一层薄得多。 该方法包括通过第一蚀刻工艺用光致抗蚀剂材料图案化第二层以形成图案化的第二层。 该方法包括通过第二蚀刻工艺将具有图案化的第二层的第一层图案化以形成图案化的第一层。 第一和第二层在第二蚀刻工艺期间具有显着不同的蚀刻速率。 该方法包括通过第三蚀刻工艺对具有图案化的第一层的图案化层进行图案化。