Keyboard
    11.
    发明授权
    Keyboard 有权
    键盘

    公开(公告)号:US08913013B2

    公开(公告)日:2014-12-16

    申请号:US13241261

    申请日:2011-09-23

    CPC classification number: G06F3/0202

    Abstract: A keyboard comprises a key module and a backlight module in which the key module comprises a light-transmissive key part and an electric circuit substrate, and the backlight module comprises a light guide plate, a reflection unit and at least one light source. The backlight module is disposed between the key part and the electric circuit substrate. Thus, lights emitted by the light source are projected into the light guide plate from the lateral side of the light guide plate, and the lights are reflected by the reflection unit for directly passing through the light output surface of the light guide plate and the key part.

    Abstract translation: 键盘包括键模块和背光模块,其中键模块包括透光键部分和电路基板,并且背光模块包括导光板,反射单元和至少一个光源。 背光模块设置在键部和电路基板之间。 因此,由光源发出的光从导光板的侧面突出到导光板中,光被反射单元反射,直接通过导光板的光输出面和键 部分。

    Method of joining superconductor materials
    12.
    发明授权
    Method of joining superconductor materials 有权
    超导材料接合方法

    公开(公告)号:US08808492B2

    公开(公告)日:2014-08-19

    申请号:US13490429

    申请日:2012-06-06

    Abstract: A method of joining superconductor materials is described. A microwave chamber including a first heat absorption plate and a second heat absorption plate corresponding to the first absorption plate is provided. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate in the microwave chamber. The first superconductor material and the second superconductor material have an overlapping region therebetween, and a pressure is applied to the first heat absorption plate and the second heat absorption plate. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.

    Abstract translation: 描述了连接超导材料的方法。 提供了包括第一吸热板和对应于第一吸收板的第二吸热板的微波室。 第一超导体材料和第二超导体材料设置在微波室中的第一吸热板和第二吸热板之间。 第一超导体材料和第二超导体材料之间具有重叠区域,并且向第一吸热板和第二吸热板施加压力。 微波功率供应到微波室。 第一吸热板和第二吸热板将微波功率转换为热能,以便在重叠区域处连接第一超导体材料和第二超导体材料。

    Purifying device for sludge under water and method for operating the same
    13.
    发明授权
    Purifying device for sludge under water and method for operating the same 失效
    水下污泥净化装置及其运行方法

    公开(公告)号:US08771509B2

    公开(公告)日:2014-07-08

    申请号:US13437934

    申请日:2012-04-03

    Abstract: The invention is directed to a purifying device for sludge under water and a method for operating the same. The device includes a main fixing frame having an accommodating portion assess to the outside, a hollow liquid container in the accommodating portion, wherein the liquid container is provided with a liquid-flow hole and at least a backwash hole, multiple filters on the liquid container, and a pump connected to the liquid-flow hole at the liquid container through a liquid pipeline. The method includes steps: moving the liquid container having the filters to an area having a liquid to be filtered; leading the liquid to flow into the liquid container through the filters filtering out solid particles contained in the liquid; and leading a fluid to flow into the liquid container such that the filters can be backwashed accompanying with an external cleaning device if the filters are clogged.

    Abstract translation: 本发明涉及一种用于水下污泥的净化装置及其操作方法。 该装置包括:主固定框架,具有向外部评估的容纳部分,容纳部分中的中空液体容器,其中液体容器设置有液体流通孔和至少反冲洗孔,液体容器上具有多个过滤器 以及通过液体管道连接到液体容器处的液体流通孔的泵。 该方法包括以下步骤:将具有过滤器的液体容器移动到具有待过滤液体的区域; 引导液体通过过滤器流入液体容器,过滤出包含在液体中的固体颗粒; 并引导流体流入液体容器,使得如果过滤器堵塞,则可以利用外部清洁装置将过滤器反洗。

    Constant current semiconductor device having a schottky barrier
    14.
    发明授权
    Constant current semiconductor device having a schottky barrier 失效
    具有肖特基势垒的恒流半导体器件

    公开(公告)号:US08742533B2

    公开(公告)日:2014-06-03

    申请号:US13219838

    申请日:2011-08-29

    Abstract: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.

    Abstract translation: 本发明揭示半绝缘衬底上的N型或P型外延层的恒流半导体器件,该器件通过使用肖特基势垒在一定偏压下截止导通沟道中的电流并提供常数 作为第一电极的肖特基势垒部/欧姆接触部分之间的截止电压和击穿电压区域内的电流分别为第二电极,并且具有比双极型器件更低的截止电压(Vkp)的优异特性 并且通过积分几个恒定电流单元容易地获得更高的恒定电流(Ip)。

    Quantum dot thin film solar cell
    15.
    发明授权
    Quantum dot thin film solar cell 有权
    量子点薄膜太阳能电池

    公开(公告)号:US08658889B2

    公开(公告)日:2014-02-25

    申请号:US12781795

    申请日:2010-05-17

    Applicant: Kun-Ping Huang

    Inventor: Kun-Ping Huang

    Abstract: A quantum dot thin film solar cell is provided, which at least includes a first electrode layer, an optical active layer, and a second electrode layer sequentially deposited on a substrate. A plurality of quantum dots is formed in the optical active layer. Since the plurality of quantum dots and the optical active layer are formed through co-sputtering, an interface adhesion between the plurality of quantum dots and the optical active layer is good in this quantum dot thin film solar cell.

    Abstract translation: 提供量子点薄膜太阳能电池,其至少包括依次沉积在基板上的第一电极层,光学有源层和第二电极层。 在光学有源层中形成多个量子点。 由于通过共溅射形成多个量子点和光学有源层,因此在该量子点薄膜太阳能电池中,多个量子点与光学活性层之间的界面粘附性良好。

    EXHAUST GAS PROCESSING CONDUIT, MANUFACTURING APPARATUS AND GAS FLOW GUIDING METHOD THEREOF
    16.
    发明申请
    EXHAUST GAS PROCESSING CONDUIT, MANUFACTURING APPARATUS AND GAS FLOW GUIDING METHOD THEREOF 审中-公开
    排气加工管道,制造装置及其气体导向方法

    公开(公告)号:US20140041585A1

    公开(公告)日:2014-02-13

    申请号:US13571475

    申请日:2012-08-10

    CPC classification number: C23C14/56 C23C16/4412 Y10T137/0318 Y10T137/87571

    Abstract: An exhaust gas processing conduit includes a main pipe and a purge pipe. The main pipe has a first sidewall and a connecting port formed on the first sidewall. The purge pipe has one end connected to the first sidewall via the connecting port. The purge pipe has a second sidewall in contact with the first sidewall at an oblique angle. A gas provided by the purge pipe is injected along the first sidewall and into the main pipe so as to guide the gas flowing along a spiral route at the oblique angle. In addition, a manufacturing apparatus and a gas flow guiding method thereof are also disclosed in the invention.

    Abstract translation: 废气处理导管包括主管和净化管。 主管具有形成在第一侧壁上的第一侧壁和连接口。 吹扫管的一端通过连接口连接到第一侧壁。 吹扫管具有与倾斜角度与第一侧壁接触的第二侧壁。 由吹扫管提供的气体沿着第一侧壁注入主管,以引导沿着螺旋形路线以斜角流动的气体。 此外,本发明还公开了一种制造装置及其气体流动引导方法。

    WELL-THROUGH TYPE DIODE ELEMENT/COMPONENT AND MANUFACTURING METHOD FOR THEM
    19.
    发明申请
    WELL-THROUGH TYPE DIODE ELEMENT/COMPONENT AND MANUFACTURING METHOD FOR THEM 有权
    良好的二极管元件/组件及其制造方法

    公开(公告)号:US20130241056A1

    公开(公告)日:2013-09-19

    申请号:US13418452

    申请日:2012-03-13

    CPC classification number: H01L29/66136 H01L29/861 H01L29/8611

    Abstract: A well-through type diode element/component manufacturing method which has a pair (pairs) of first and said second electrodes of a diode element/component built on same plane by a process of metallization after a mode of well-through type to penetrate a PN junction depletion region/barrier region, and leads electrons of one of the electrodes to flow through the Depletion/Barrier region without hindrance; the present invention directly conduct the operations of insulation protecting, metallization and the process of elongate welding ball etc., it can independently complete a novel technique of Chip-Scale Package (CSP); it has the features of: grains being exactly the article produced, no need of connecting lines, low energy consumption, low cost and light, thin and small etc.

    Abstract translation: 一种通孔型二极管元件/元件制造方法,其具有通过在穿透型之后的金属化工艺在同一平面上构建的二极管元件/部件的一对(成对)第一和第二电极,以穿透 PN结耗尽区域/势垒区域,并且引导电极之一的电子不受阻碍地流过耗尽/屏障区域; 本发明直接进行绝缘保护,金属化和细长焊球等工艺,可以独立完成芯片级封装(CSP)的新技术; 它具有以下特点:谷物正好是产品生产,不需要连线,能耗低,成本低,重量轻,薄而小。

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