Abstract:
This disclosure provides systems, methods and apparatus for a ledge-free display. In one aspect, row driver circuits and column driver circuits may be provided from the backside of the display to reduce the size of the bezel around the display and eliminate the need for a bonding ledge for a ledge-free display.
Abstract:
This disclosure provides systems, methods, and apparatus related to electromechanical systems display devices. In one aspect, an apparatus includes a display assembly, a sensor, and a processor. The display assembly may include an array of electromechanical systems display devices. The sensor may be configured to provide a signal indicative of an illumination angle, a viewing angle, or both, with respect to a line perpendicular to the display assembly. The processor may be configured to receive the signal from the sensor, to determine the illumination angle and/or viewing angle, and to process image data to compensate for the determined illumination angle and/or viewing angle. In one implementation, the image data is processed to compensate for a shift in a wavelength of light reflected from at least one of the electromechanical systems display devices that would have occurred as a result of a non-normal illumination and/or viewing angle.
Abstract:
This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.
Abstract:
This disclosure provides systems, methods and apparatus for an arrangement of pixels and interconnects in a display. In one aspect, polarities of pixels may be in a dot inversion configuration, or checkerboard pattern, to reduce the visibility of flicker. Various interconnect alternatively couple between modules in different columns or rows to provide dot inversion.
Abstract:
Various implementations described herein involve multi-state interferometric modulators (MS-IMODs) without dielectric layers capable of affecting optical performance formed on the mirrors. The MS-IMODs disclosed herein may include a novel combination of high refractive index and low refractive index layers in the absorber stack. Some such MS-IMODs include absorber stacks having an absorber layer, a first high-index layer disposed between the absorber layer and the substrate, a low-index layer disposed between the absorber layer and the first high-index layer and a second high-index layer disposed on a side of the absorber layer facing the mirror. The absorber stack and the mirror may define a gap therebetween and may be capable of being positioned in a plurality of positions relative to one another to form a plurality of gap heights. In some implementations, the closest position corresponds with a black state gap height.
Abstract:
This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for selecting a temporal modulation method according to an analysis of image data and for controlling a pixel array according to the temporal modulation method. The analysis may involve analyzing at least one of image content data or image gamut data.
Abstract:
This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).
Abstract:
This disclosure provides systems, methods and apparatus for a laminated film enclosing an array of microelectromechanical systems (MEMS) structures. In one aspect, a MEMS apparatus includes a substrate having a device region and an edge region surrounding the device region and an array of MEMS structures on the substrate at the device region. A protective layer is disposed over the array of MEMS structures. A laminated film is disposed over the protective layer and in contact with the substrate to form a seal at the edge region, where the laminated film forms a cavity between the substrate and the laminated film at the device region. The laminated film includes a moisture barrier layer facing away from the array of MEMS structures, and a desiccant layer facing toward the array of MEMS structures.
Abstract:
This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having one or more flexible support posts. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, one or more flexible support posts over the substrate, and a movable electrode over the stationary electrode and supported by the one or more flexible support posts. The movable electrode is configured to move across a gap between the movable electrode and the stationary electrode upon electrostatic actuation, where the one or more flexible support posts include a first organic material and can be configured to compress to permit the movable electrode to move across the gap.
Abstract:
This disclosure provides systems, methods and apparatus for a compact 3-D coplanar transmission line (CTL). In one aspect, the CTL has a proximal end and a distal end separated, in a first plane, by a distance D, the first plane being parallel to a layout area of a substrate. The plane is defined by mutually orthogonal axes x and z The CTL provides a conductive path having pathlength L. D is substantially aligned along axis z, L is at least 1.5×D, and the CPW is configured such that at least one third of the pathlength L is disposed along one or more directions having a substantial component orthogonal to the first plane. Less than one third of the pathlength L is disposed in a direction having a substantial component parallel to axis x.