Real-time compensation for blue shift of electromechanical systems display devices
    12.
    发明授权
    Real-time compensation for blue shift of electromechanical systems display devices 有权
    实时补偿机电系统显示设备的蓝移

    公开(公告)号:US09325948B2

    公开(公告)日:2016-04-26

    申请号:US13675739

    申请日:2012-11-13

    Abstract: This disclosure provides systems, methods, and apparatus related to electromechanical systems display devices. In one aspect, an apparatus includes a display assembly, a sensor, and a processor. The display assembly may include an array of electromechanical systems display devices. The sensor may be configured to provide a signal indicative of an illumination angle, a viewing angle, or both, with respect to a line perpendicular to the display assembly. The processor may be configured to receive the signal from the sensor, to determine the illumination angle and/or viewing angle, and to process image data to compensate for the determined illumination angle and/or viewing angle. In one implementation, the image data is processed to compensate for a shift in a wavelength of light reflected from at least one of the electromechanical systems display devices that would have occurred as a result of a non-normal illumination and/or viewing angle.

    Abstract translation: 本公开提供了与机电系统显示装置相关的系统,方法和装置。 一方面,一种装置包括显示组件,传感器和处理器。 显示组件可以包括机电系统显示装置的阵列。 传感器可以被配置为相对于垂直于显示组件的线提供指示照明角度,视角或两者的信号。 处理器可以被配置为从传感器接收信号,以确定照明角度和/或视角,并且处理图像数据以补偿确定的照明角度和/或视角。 在一个实施方案中,处理图像数据以补偿由于非正常照明和/或视角而产生的至少一个机电系统显示装置反射的光的波长偏移。

    LASER ANNEALING TECHNIQUE FOR METAL OXIDE TFT
    13.
    发明申请
    LASER ANNEALING TECHNIQUE FOR METAL OXIDE TFT 有权
    用于金属氧化物膜的激光退火技术

    公开(公告)号:US20160086802A1

    公开(公告)日:2016-03-24

    申请号:US14495586

    申请日:2014-09-24

    Abstract: This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.

    Abstract translation: 本公开提供了用于在薄膜晶体管(TFT)中退火氧化物半导体的方法和装置。 在一个方面,该方法包括提供在基板上形成的部分制造的TFT结构的基板。 部分制造的TFT结构可以包括在氧化物半导体层上的氧化物半导体层和电介质氧化物层。 氧化物半导体层通过在环境条件下用红外激光器将电介质氧化物层加热到低于氧化物半导体层的熔融温度的温度来退火。 红外激光辐射可以被电介质氧化物层基本上吸收,并且可以在与电介质氧化物层接触的界面处从氧化物半导体层去除不想要的缺陷。

    ABSORBER STACK FOR MULTI-STATE INTERFEROMETRIC MODULATORS
    15.
    发明申请
    ABSORBER STACK FOR MULTI-STATE INTERFEROMETRIC MODULATORS 审中-公开
    用于多状态干涉仪调制器的绝缘堆叠

    公开(公告)号:US20150355454A1

    公开(公告)日:2015-12-10

    申请号:US14295965

    申请日:2014-06-04

    Abstract: Various implementations described herein involve multi-state interferometric modulators (MS-IMODs) without dielectric layers capable of affecting optical performance formed on the mirrors. The MS-IMODs disclosed herein may include a novel combination of high refractive index and low refractive index layers in the absorber stack. Some such MS-IMODs include absorber stacks having an absorber layer, a first high-index layer disposed between the absorber layer and the substrate, a low-index layer disposed between the absorber layer and the first high-index layer and a second high-index layer disposed on a side of the absorber layer facing the mirror. The absorber stack and the mirror may define a gap therebetween and may be capable of being positioned in a plurality of positions relative to one another to form a plurality of gap heights. In some implementations, the closest position corresponds with a black state gap height.

    Abstract translation: 本文描述的各种实施方式涉及不具有能够影响形成在反射镜上的光学性能的电介质层的多状态干涉式调制器(MS-IMOD)。 本文公开的MS-IMOD可以包括在吸收体堆叠中的高折射率和低折射率层的新颖组合。 一些这样的MS-IMOD包括具有吸收层的吸收体层,设置在吸收层和衬底之间的第一高折射率层,设置在吸收层和第一高折射率层之间的低折射率层, 折射率层设置在面向反射镜的吸收体层的一侧。 吸收体堆和反射镜可以限定它们之间的间隙,并且可以相对于彼此定位在多个位置以形成多个间隙高度。 在一些实施方案中,最接近的位置对应于黑色状态间隙高度。

    Image-dependent temporal slot determination for multi-state IMODs
    16.
    发明授权
    Image-dependent temporal slot determination for multi-state IMODs 有权
    多状态IMOD的图像相关时隙确定

    公开(公告)号:US09190013B2

    公开(公告)日:2015-11-17

    申请号:US13759271

    申请日:2013-02-05

    Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for selecting a temporal modulation method according to an analysis of image data and for controlling a pixel array according to the temporal modulation method. The analysis may involve analyzing at least one of image content data or image gamut data.

    Abstract translation: 本公开提供了系统,方法和装置,包括在计算机存储介质上编码的计算机程序,用于根据图像数据的分析选择时间调制方法,并根据时间调制方法控制像素阵列。 分析可以涉及分析图像内容数据或图像色域数据中的至少一个。

    Metal oxide layer composition control by atomic layer deposition for thin film transistor
    17.
    发明授权
    Metal oxide layer composition control by atomic layer deposition for thin film transistor 有权
    金属氧化物层组成通过原子层沉积控制薄膜晶体管

    公开(公告)号:US09171960B2

    公开(公告)日:2015-10-27

    申请号:US13750959

    申请日:2013-01-25

    Abstract: This disclosure provides systems, methods and apparatus for a thin film transistor (TFT) device on a substrate. In one aspect, the TFT device includes a gate electrode, an oxide semiconductor layer, and a gate insulator between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer includes at least two metal oxides, with the two metal oxides having a varying concentration relative to one another between a lower surface and an upper surface of the oxide semiconductor layer. The TFT device also includes a source metal adjacent to a portion of the oxide semiconductor layer and a drain metal adjacent to another portion of the oxide semiconductor layer. The composition of the oxide semiconductor layer can be precisely controlled by a sequential deposition technique using atomic layer deposition (ALD).

    Abstract translation: 本公开提供了用于衬底上的薄膜晶体管(TFT)器件的系统,方法和装置。 在一个方面,TFT器件包括栅电极,氧化物半导体层和栅电极和氧化物半导体层之间的栅极绝缘体。 氧化物半导体层包括至少两种金属氧化物,其中两种金属氧化物在氧化物半导体层的下表面和上表面之间具有相对于彼此变化的浓度。 TFT器件还包括与氧化物半导体层的一部分相邻的源极金属和与氧化物半导体层的另一部分相邻的漏极金属。 可以通过使用原子层沉积(ALD)的顺序沉积技术精确地控制氧化物半导体层的组成。

    MEMS encapsulation by multilayer film lamination
    18.
    发明授权
    MEMS encapsulation by multilayer film lamination 有权
    MEMS封装通过多层膜层压

    公开(公告)号:US09156678B2

    公开(公告)日:2015-10-13

    申请号:US14104915

    申请日:2013-12-12

    CPC classification number: B81B7/0058 B81B7/0038 B81C1/00333 B81C2203/0172

    Abstract: This disclosure provides systems, methods and apparatus for a laminated film enclosing an array of microelectromechanical systems (MEMS) structures. In one aspect, a MEMS apparatus includes a substrate having a device region and an edge region surrounding the device region and an array of MEMS structures on the substrate at the device region. A protective layer is disposed over the array of MEMS structures. A laminated film is disposed over the protective layer and in contact with the substrate to form a seal at the edge region, where the laminated film forms a cavity between the substrate and the laminated film at the device region. The laminated film includes a moisture barrier layer facing away from the array of MEMS structures, and a desiccant layer facing toward the array of MEMS structures.

    Abstract translation: 本公开提供了用于封装微机电系统(MEMS)结构阵列的层压膜的系统,方法和装置。 在一个方面,MEMS装置包括具有器件区域和围绕器件区域的边缘区域以及器件区域上的衬底上的MEMS结构阵列的衬底。 保护层设置在MEMS结构阵列上。 层叠膜设置在保护层上方并与基板接触以在边缘区域形成密封,其中层压膜在器件区域处在基板和层压膜之间形成空腔。 层压膜包括背离MEMS结构阵列的防潮层和面向MEMS结构阵列的干燥剂层。

    EMS DEVICE HAVING FLEXIBLE SUPPORT POSTS
    19.
    发明申请
    EMS DEVICE HAVING FLEXIBLE SUPPORT POSTS 有权
    EMS设备具有灵活的支持位置

    公开(公告)号:US20150277099A1

    公开(公告)日:2015-10-01

    申请号:US14564851

    申请日:2014-12-09

    Abstract: This disclosure provides apparatus, systems and methods for an electromechanical systems (EMS) device having one or more flexible support posts. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, one or more flexible support posts over the substrate, and a movable electrode over the stationary electrode and supported by the one or more flexible support posts. The movable electrode is configured to move across a gap between the movable electrode and the stationary electrode upon electrostatic actuation, where the one or more flexible support posts include a first organic material and can be configured to compress to permit the movable electrode to move across the gap.

    Abstract translation: 本公开提供了具有一个或多个柔性支撑柱的机电系统(EMS)装置的装置,系统和方法。 一方面,EMS装置包括衬底,衬底上的固定电极,衬底上的一个或多个柔性支撑柱以及固定电极上的可移动电极,并由一个或多个柔性支撑柱支撑。 可移动电极构造成在静电致动时跨越可移动电极和固定电极之间的间隙移动,其中一个或多个柔性支撑柱包括第一有机材料,并且可构造成压缩以允许可移动电极跨越 间隙。

    Compact 3-D coplanar transmission lines
    20.
    发明授权
    Compact 3-D coplanar transmission lines 有权
    紧凑型3-D共面传输线

    公开(公告)号:US09136574B2

    公开(公告)日:2015-09-15

    申请号:US13914474

    申请日:2013-06-10

    CPC classification number: H01P3/026 H01P3/003 H05K1/0237

    Abstract: This disclosure provides systems, methods and apparatus for a compact 3-D coplanar transmission line (CTL). In one aspect, the CTL has a proximal end and a distal end separated, in a first plane, by a distance D, the first plane being parallel to a layout area of a substrate. The plane is defined by mutually orthogonal axes x and z The CTL provides a conductive path having pathlength L. D is substantially aligned along axis z, L is at least 1.5×D, and the CPW is configured such that at least one third of the pathlength L is disposed along one or more directions having a substantial component orthogonal to the first plane. Less than one third of the pathlength L is disposed in a direction having a substantial component parallel to axis x.

    Abstract translation: 本公开提供了用于紧凑型3-D共面传输线(CTL)的系统,方法和装置。 在一个方面,CTL具有在第一平面中距离D分开的近端和远端,第一平面平行于衬底的布局区域。 平面由相互正交的轴x和z定义。CTL提供具有路径长度L的导电路径.D沿轴线z基本对准,L至少为1.5×D,并且CPW被配置为使得至少三分之一的 路径长度L沿着具有与第一平面正交的实质分量的一个或多个方向布置。 路径长度L的三分之一以具有平行于轴线x的基本分量的方向设置。

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