公开(公告)号：US07513999B2

公开(公告)日：2009-04-07

申请号：US11880694

申请日：2007-07-24

申请人： Malcolm Ezekiel Fabiyi ,  Richard Novak

发明人： Malcolm Ezekiel Fabiyi ,  Richard Novak

IPC分类号： C02F3/00

CPC分类号： C02F3/12 ,  C02F1/78 ,  C02F3/1221 ,  C02F2209/06 ,  C02F2303/06 ,  C02F2303/12 ,  Y02W10/15

摘要： A system and method for the ozone treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to an activated sludge treatment basin. The high selectivity reactor is adapted to receive a stream containing sludge diverted directly or indirectly from the activated sludge treatment basin. The disclosed wastewater treatment system and method is adapted to inject a chemical agent, such as ozone-enriched gas, into the diverted stream for treatment within the high selectivity reactor for purposes of sludge reduction, foam control, or bulking control. The treated stream is then returned to the activated sludge treatment basin.

摘要翻译： 公开了臭氧处理废水的系统和方法。 公开的废水处理系统包括与活性污泥处理池相连的高选择性反应器。 高选择性反应器适于接收含有从活性污泥处理池直接或间接转移的污泥的物流。 所公开的废水处理系统和方法适于在用于污泥减少，泡沫控制或膨胀控制的目的的高选择性反应器内将用于诸如富含臭氧的气体的化学试剂注入到转向流中用于处理。 然后将处理过的物流返回到活性污泥处理池。

公开(公告)号：US20060011214A1

公开(公告)日：2006-01-19

申请号：US11176406

申请日：2005-07-07

申请人： Zhi Liu ,  Ismail Kashkoush ,  Alan Walter ,  Richard Novak

发明人： Zhi Liu ,  Ismail Kashkoush ,  Alan Walter ,  Richard Novak

IPC分类号： C03C23/00 ,  B08B3/00

CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D3/042 ,  C11D11/0047 ,  H01L21/28167 ,  H01L21/28238 ,  H01L21/67051

摘要： A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIO3 and dilute chemistries. In one aspect, the invention is a method comprising: (a) supporting in a process chamber at least one semiconductor wafer having a silicon foundation with a silicon-dioxide layer in at least one pre-gate structure; (b) applying an aqueous solution of hydrofluoric acid in deionized (DI) water to the semiconductor wafer to remove the silicon dioxide layer and form a gate; (c) applying ozonated deionized water (DIO3) to the semiconductor wafer to remove particles from the gate and passivate the silicon foundation; (d) applying a dilute solution of hydrofluoric acid and hydrochloric acid in DI water to the semiconductor wafer to remove any silicon dioxide layer that may have formed in the gate from the application of the DIO3 and to remove any metal contaminants; and (e) applying DIO3 to the semiconductor wafer to grow a new layer of silicon dioxide on the silicon foundation in the gate.

摘要翻译： 一种用于清洁半导体晶片的系统和方法，其中消除了使用SCI和SC2并用DIO 3 3和稀释化学物质代替。 一方面，本发明是一种方法，其包括：（a）在处理室中至少一个半导体晶片支撑，所述至少一个半导体晶片具有至少一个预栅极结构中的具有二氧化硅层的硅基底; （b）将氢氟酸的水溶液在去离子（DI）水中加入到半导体晶片中以除去二氧化硅层并形成栅极; （c）将氧化的去离子水（DIO 3 3）施加到半导体晶片以从栅极去除颗粒并钝化硅基底; （d）将氢氟酸和盐酸的稀释溶液在去离子水中加到半导体晶片上以除去在施加DIO 3 3时可能在栅极中形成的任何二氧化硅层，并除去 任何金属污染物; 和（e）向半导体晶片施加DIO 3，以在栅极的硅基底上生长新的二氧化硅层。

公开(公告)号：US06863836B2

公开(公告)日：2005-03-08

申请号：US10634440

申请日：2003-08-05

申请人： Richard Novak ,  Ismail Kashkoush

发明人： Richard Novak ,  Ismail Kashkoush

IPC分类号： G03F7/42 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： G03F7/423

摘要： A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

摘要翻译： 通过使用喷射器板从半导体晶片去除光致抗蚀剂的方法。 根据本发明的方法，至少一个半导体晶片被定位在喷雾器板上方的处理罐中。 将臭氧和去离子水的混合物在分配器板下方的一个位置处引入工艺罐中。 然后以增加的流速将臭氧和去离子水的混合物通过分布器板穿过晶片，同时将晶片浸没在去离子水和臭氧的混合物中。

公开(公告)号：US20050026435A1

公开(公告)日：2005-02-03

申请号：US10909764

申请日：2004-08-02

申请人： Gim-Syang Chen ,  Ismail Kashkoush ,  Richard Novak

发明人： Gim-Syang Chen ,  Ismail Kashkoush ,  Richard Novak

IPC分类号： B08B3/12 ,  B08B7/00 ,  B08B7/02 ,  C23F1/00 ,  G03F20060101 ,  G03F7/42 ,  H01L21/306 ,  G03F9/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： G03F7/423 ,  G03F7/428

摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

摘要翻译： 一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时 应用兆声波能量。 本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。 该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

公开(公告)号：US06840250B2

公开(公告)日：2005-01-11

申请号：US10117778

申请日：2002-04-05

申请人： Ismail Kashkoush ,  Richard Novak ,  Tom Mancuso ,  Jim Vadimsky

发明人： Ismail Kashkoush ,  Richard Novak ,  Tom Mancuso ,  Jim Vadimsky

IPC分类号： B08B3/12 ,  H01L21/00 ,  B08B7/04

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A process tank for processing a plurality of wafers having a diameter, the process tank comprising: two substantially vertical side walls being a first distance apart; wherein the first distance is substantially equal to the diameter of the wafer; two upwardly angled walls positioned between the side walls; a first transducer array coupled to a first of the upwardly angled walls, the first transducer array extending a length less than the diameter of the wafer; and a second transducer array coupled to a second of the upwardly angled walls, the second transducer array extending a length less than the diameter of the wafer. It is preferred that the process tank further comprise a fluid inlet positioned between the upwardly angled walls. In another aspect, the invention is a method of processing wafers comprising: filling the process tank described above with a wafer processing liquid through the tank inlet; submerging a wafer carrier holding a plurality wafers into the tank; and applying megasonic energy to the liquid through the first and second transducer arrays for a predetermined time and in a predetermined pattern.

摘要翻译： 一种用于处理具有直径的多个晶片的处理罐，所述处理罐包括：两个基本上垂直的侧壁，其间隔开第一距离; 其中所述第一距离基本上等于所述晶片的直径; 位于侧壁之间的两个向上倾斜的壁; 耦合到所述向上倾斜的第一壁的第一换能器阵列，所述第一换能器阵列延伸的长度小于所述晶片的直径; 以及耦合到所述向上倾斜的壁中的第二个的第二换能器阵列，所述第二换能器阵列延伸的长度小于所述晶片的直径。 优选地，处理罐还包括位于向上成角度的壁之间的流体入口。 另一方面，本发明是一种处理晶片的方法，其特征在于，包括：用晶片处理液体通过所述槽入口填充上述处理槽; 将保持多个晶片的晶片载体浸入所述槽中; 以及通过所述第一和第二换能器阵列在预定时间内以预定模式对所述液体施加兆声波能量。

公开(公告)号：US06818563B2

公开(公告)日：2004-11-16

申请号：US10366054

申请日：2003-02-13

申请人： Richard Novak ,  Ismail Kashkoush ,  Gim-Syang Chen ,  Dennis Nemeth

发明人： Richard Novak ,  Ismail Kashkoush ,  Gim-Syang Chen ,  Dennis Nemeth

IPC分类号： H01L21302

CPC分类号： G03F7/423 ,  Y10T117/10

摘要： A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

摘要翻译： 公开了一种从半导体晶片去除光致抗蚀剂的方法，其中至少一个具有至少一层光致抗蚀剂的半导体晶片位于处理槽中; 向所述处理罐提供臭氧气体; 并且所述半导体晶片经由至少一个喷嘴用臭氧和去离子水的混合物喷射。 该过程中的温度保持在或高于环境温度。 供给到罐的臭氧气体优选地处于所述处理罐内的压力下，并且喷嘴优选以5至10个大气压的喷嘴压力喷射去离子水和臭氧的混合物。 在另一个实施例中，本发明是用于执行该过程的装置。

公开(公告)号：US06766818B2

公开(公告)日：2004-07-27

申请号：US10117725

申请日：2002-04-05

申请人： Ismail Kashkoush ,  Richard Novak ,  Timothy J. Helmer

发明人： Ismail Kashkoush ,  Richard Novak ,  Timothy J. Helmer

IPC分类号： G05D1108

CPC分类号： G05D11/138 ,  Y10T137/0329 ,  Y10T137/2509

摘要： A system and method for ensuring constant concentration ratios in multi-fluid mixtures used in wafer processing steps. In one aspect the invention is a method for supplying a multi-fluid mixture to a process tank comprising: transporting a first fluid through a first supply line having means to control mass flow rate of the first fluid; transporting a second fluid through a second supply line having means to control mass flow rate of the second fluid; converging the first and second fluids to form a multi-fluid mixture; repetitively measuring the concentration levels of the first and second fluids in the multi-fluid mixture with a sensor; and upon the sensor detecting undesirable concentration levels of either the first or second fluid in the multi-fluid mixture, automatically adjusting the mass flow rate of at least one of the first and second fluids to achieve desired concentration levels.

摘要翻译： 用于确保在晶片加工步骤中使用的多流体混合物中的恒定浓度比的系统和方法。 在一个方面，本发明是一种用于将多流体混合物供应到处理罐的方法，包括：通过具有控制第一流体的质量流量的装置的第一供应管线输送第一流体; 通过具有控制第二流体的质量流量的装置的第二供应管线输送第二流体; 会聚第一和第二流体以形成多流体混合物; 用传感器重复地测量多流体混合物中的第一和第二流体的浓度水平; 并且在所述传感器检测到所述多流体混合物中的第一或第二流体的不期望的浓度水平时，自动调节所述第一和第二流体中的至少一个的质量流率以达到期望的浓度水平。

公开(公告)号：US08741066B2

公开(公告)日：2014-06-03

申请号：US12070620

申请日：2008-02-19

申请人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

发明人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

IPC分类号： B08B3/12 ,  B08B3/08

CPC分类号： H01L21/02052

摘要： A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

摘要翻译： 用于清洁晶片的方法/方法，其通过在施加标准清洁剂1之前执行预蚀刻然后钝化晶片表面来消除和/或减少由标准清洁1引起的点蚀。该方法/方法可能特别适用于 高级前端线后CPM清洗。 在一个实施例中，本发明是一种处理衬底的方法，包括：a）提供至少一个衬底; b）通过施加蚀刻溶液蚀刻所述基板的表面; c）通过施加臭氧钝化衬底的蚀刻表面; 以及d）通过施加包含氢氧化铵和过氧化氢的水溶液来清洁基材的钝化表面。

公开(公告)号：US20080105614A1

公开(公告)日：2008-05-08

申请号：US11880694

申请日：2007-07-24

申请人： Malcolm Ezekiel Fabiyi ,  Richard Novak

发明人： Malcolm Ezekiel Fabiyi ,  Richard Novak

IPC分类号： C02F3/12

CPC分类号： C02F3/12 ,  C02F1/78 ,  C02F3/1221 ,  C02F2209/06 ,  C02F2303/06 ,  C02F2303/12 ,  Y02W10/15

摘要： A system and method for the ozone treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to an activated sludge treatment basin. The high selectivity reactor is adapted to receive a stream containing sludge diverted directly or indirectly from the activated sludge treatment basin. The disclosed wastewater treatment system and method is adapted to inject a chemical agent, such as ozone-enriched gas, into the diverted stream for treatment within the high selectivity reactor for purposes of sludge reduction, foam control, or bulking control. The treated stream is then returned to the activated sludge treatment basin.

摘要翻译： 公开了臭氧处理废水的系统和方法。 公开的废水处理系统包括与活性污泥处理池相连的高选择性反应器。 高选择性反应器适于接收含有从活性污泥处理池直接或间接转移的污泥的物流。 所公开的废水处理系统和方法适于在用于污泥减少，泡沫控制或膨胀控制的目的的高选择性反应器内将用于诸如富含臭氧的气体的化学试剂注入到转向流中用于处理。 然后将处理过的物流返回到活性污泥处理池。

公开(公告)号：US20080078719A1

公开(公告)日：2008-04-03

申请号：US11591894

申请日：2006-11-02

申请人： Malcolm Ezekiel Fabiyi ,  Richard Novak

发明人： Malcolm Ezekiel Fabiyi ,  Richard Novak

IPC分类号： C02F3/02

CPC分类号： C02F3/006 ,  C02F1/441 ,  C02F1/444 ,  C02F1/78 ,  C02F3/1221 ,  C02F3/1273 ,  C02F11/06 ,  Y02W10/15

摘要： A system and method for the treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to a wastewater treatment reactor, such as an activated sludge treatment basin, membrane bioreactor or sequencing batch reactor. The high selectivity reactor is adapted to receive a liquid stream containing biosolids diverted directly or indirectly from the wastewater treatment reactor. The wastewater treatment system also includes a chemical injection subsystem operatively coupled to the high selectivity reactor and adapted to inject a chemical, such as ozone-enriched gas, into the diverted liquid stream to effect highly selective treatment of the diverted stream. The treated liquid stream is subsequently sent via a return line to the continuously stirred tank reactor or other discharge point.

摘要翻译： 公开了一种处理废水的系统和方法。 所公开的废水处理系统包括连接到废水处理反应器的高选择性反应器，例如活性污泥处理池，膜生物反应器或顺序间歇反应器。 高选择性反应器适于接收含有直接或间接从废水处理反应器转移的生物固体的液体物流。 废水处理系统还包括操作性地耦合到高选择性反应器并适于将诸如富含臭氧的气体的化学品注入转向的液体流中以实现对转向流的高度选择性处理的化学注入子系统。 经处理的液体流随后通过回流管线输送到连续搅拌的釜式反应器或其他排放点。