摘要:
A system and method for the ozone treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to an activated sludge treatment basin. The high selectivity reactor is adapted to receive a stream containing sludge diverted directly or indirectly from the activated sludge treatment basin. The disclosed wastewater treatment system and method is adapted to inject a chemical agent, such as ozone-enriched gas, into the diverted stream for treatment within the high selectivity reactor for purposes of sludge reduction, foam control, or bulking control. The treated stream is then returned to the activated sludge treatment basin.
摘要:
A system and method for the ozone treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to an activated sludge treatment basin. The high selectivity reactor is adapted to receive a stream containing sludge diverted directly or indirectly from the activated sludge treatment basin. The disclosed wastewater treatment system and method is adapted to inject a chemical agent, such as ozone-enriched gas, into the diverted stream for treatment within the high selectivity reactor for purposes of sludge reduction, foam control, or bulking control. The treated stream is then returned to the activated sludge treatment basin.
摘要:
A system and method for the treatment of wastewater is disclosed. The disclosed wastewater treatment system includes a high selectivity reactor coupled to a wastewater treatment reactor, such as an activated sludge treatment basin, membrane bioreactor or sequencing batch reactor. The high selectivity reactor is adapted to receive a liquid stream containing biosolids diverted directly or indirectly from the wastewater treatment reactor. The wastewater treatment system also includes a chemical injection subsystem operatively coupled to the high selectivity reactor and adapted to inject a chemical, such as ozone-enriched gas, into the diverted liquid stream to effect highly selective treatment of the diverted stream. The treated liquid stream is subsequently sent via a return line to the continuously stirred tank reactor or other discharge point.
摘要:
A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.
摘要:
A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要:
A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor. In yet another aspect, the invention is a system for supplying a gas-liquid vapor to a process tank comprising: the apparatus of the present invention; gas supply means adapted to supply the gas to the tube; liquid supply means adapted to supply the liquid to the chamber; and gas-liquid transport means adapted to carry the gas-fluid vapor from the apparatus to the process tank.
摘要:
A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water. The system is comprised of a tank capable of holding the semiconductor wafers, a sparger plate within the tank, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank. No chiller is included in the system as required by the prior art.
摘要:
A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.
摘要:
A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要:
A system is provided for creating a personalized user interface on a mobile platform to deliver personalized information content to a personal electronic device (PED) of a user on-board the mobile platform. The system includes at least one portal operable to communicate with the user's PED and a first database operable to maintain a set of characteristics relating to the user, the mobile platform and/or other factors. A controller is in communication with the database, and the controller transmits to the PED of the user information content received from a second database of a central control station. The information content is provided in accordance with the characteristics stored in the first database, and thus forms personalized information content and advertisements for the user.