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公开(公告)号：US20070289359A1
公开(公告)日：2007-12-20
申请号：US11758299
申请日：2007-06-05
Applicant: Steven C. Shannon , Daniel J. Hoffman , Jeremiah T.P. Pender , Tarreg Mawari
Inventor： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T.P. Pender , Tarreg Mawari
IPC: G01N27/00
CPC classification number: H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
Abstract: Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform. In another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, and determining at least one characteristic of a plasma using model. In yet another embodiment, the method includes providing a plasma impedance model of a plasma as a function of frequency, measuring current and voltage for waveforms coupled to the plasma and having at least two different frequencies, and determining ion mass of a plasma from model and the measured current and voltage of the waveforms.
Abstract translation: 提供了确定等离子体特性的方法。 在一个实施例中，用于确定等离子体特性的方法包括获得与不同频率耦合到等离子体的第一和第二波形的电流和电压信息的度量，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性 。 在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，以及使用模型确定等离子体的至少一个特性。 在另一个实施例中，该方法包括提供作为频率的函数的等离子体的等离子体阻抗模型，测量耦合到等离子体并具有至少两个不同频率的波形的电流和电压，以及从模型确定等离子体的离子质量， 测量的电流和电压的波形。
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公开(公告)号：US20130192629A1
公开(公告)日：2013-08-01
申请号：US13740083
申请日：2013-01-11
Applicant: Vineet Mehta , Karl M. BROWN , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. PARKHE
Inventor： Vineet Mehta , Karl M. BROWN , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. PARKHE
IPC: B08B7/00
CPC classification number: B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
Abstract translation: 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。
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公开(公告)号：US08435379B2
公开(公告)日：2013-05-07
申请号：US11745451
申请日：2007-05-08
Applicant: Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
Inventor： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC: H01L21/306
CPC classification number: B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
Abstract translation: 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。
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14.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator 有权等离子体反应器，通过源功率或偏置功率RF发生器的同步调制实现等离子体负载阻抗调谐公开(公告)号：US08357264B2
公开(公告)日：2013-01-22
申请号：US12128963
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32183
Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.
Abstract translation: 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。
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15.发明授权Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权等离子体反应器，通过同步调制无与伦比的低功率射频发生器，实现等离子体负载阻抗调谐，实现工程瞬变公开(公告)号：US08337661B2
公开(公告)日：2012-12-25
申请号：US12128926
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32183
Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
Abstract translation: 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。
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Patent Agency Ranking
16.发明授权Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources 有权等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源公开(公告)号：US08018164B2
公开(公告)日：2011-09-13
申请号：US12129155
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC: H01J7/24
CPC classification number: H05H1/36 , H01J37/32082 , H01J37/32183 , H01J37/32935 , H05H1/46
Abstract: Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
Abstract translation: 诸如负载阻抗的等离子体特性的波动由控制器补偿，该控制器调制耦合到具有适于稳定等离子体特性的频率的等离子体的稳定RF发生器，控制器响应于等离子体特性的波动。
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17.发明授权Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity 有权在具有可变高度接地返回路径的等离子体反应器中处理工件的方法以控制等离子体离子密度均匀性公开(公告)号：US07968469B2
公开(公告)日：2011-06-28
申请号：US11733984
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165
Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率在第一VHF频率f1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极和 工件支撑电极为频率f1。 该方法还包括提供可变高度边缘的地面环形元件，并为频率f1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。
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18.发明授权Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources 失效通过在多个VHF源之间分配接地返回路径阻抗，在晶片上的等离子体工艺均匀性公开(公告)号：US07884025B2
公开(公告)日：2011-02-08
申请号：US11733767
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302
CPC classification number: C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
Abstract translation: 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。
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19.发明授权Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources 失效通过在多个VHF源之间分配功率来提高晶片上的等离子体工艺均匀性公开(公告)号：US07879731B2
公开(公告)日：2011-02-01
申请号：US11733764
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165
Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
Abstract translation: 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将相应的VHF频率f1和f2的相应RF功率源耦合到（a）电极中的相应电极或（b）共同的一个电极，其中f1足够高以产生中心高的不均匀 等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 该方法还包括调整f1频率处的RF参数与f2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。
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公开(公告)号：US07879185B2
公开(公告)日：2011-02-01
申请号：US10823371
申请日：2004-04-12
Applicant: Steven C. Shannon , John Holland
Inventor： Steven C. Shannon , John Holland
IPC: C23F1/00 , H01L21/306 , C23C16/00
CPC classification number: H01J37/32082 , H01J37/32183
Abstract: A dual frequency matching circuit for plasma enhanced semiconductor processing chambers having dual frequency cathodes is provided. The matching circuit includes two matching circuits with variable shunts combined to a common output. The matching circuit balances the load of the independent RF sources to that of the plasma in the processing chamber during operation.
Abstract translation: 提供了具有双频阴极的等离子体增强半导体处理室的双频匹配电路。 匹配电路包括两个具有可变分流的匹配电路，其组合到公共输出端。 匹配电路在操作期间将独立RF源的负载与处理室中的等离子体的负载平衡。
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