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    Methods for Preparation of High-Purity Polysilicon Rods Using a Metallic Core Means
    11.
    发明申请
    Methods for Preparation of High-Purity Polysilicon Rods Using a Metallic Core Means 有权
    使用金属核心手段制备高纯度多晶硅棒的方法

    公开(公告)号：US20100221454A1

    公开(公告)日：2010-09-02

    申请号：US12160837

    申请日：2007-05-21

    Applicant: Hee Young Kim ,  Kyung Koo Yoon ,  Young Ki Park ,  Won Choon Choi ,  Sang Jin Moon

    Inventor： Hee Young Kim ,  Kyung Koo Yoon ,  Young Ki Park ,  Won Choon Choi ,  Sang Jin Moon

    IPC: C23C16/24 ,  C23C16/46

    CPC classification number: C23C16/4581 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2913

    Abstract: The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means (C) is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means (E), heating the core means (C) by supplying electricity through the electrode means (E), and supplying a reaction gas (Gf) into the inner space (Ri) for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means (C). According to the present invention, the deposition output (D) and the core means (C) can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element (Ca) can be minimized, thereby a high-purity silicon can be prepared in a more economic and convenient way.

    Abstract translation: 本发明涉及一种使用金属芯装置制备多晶硅棒的方法，包括：在用于制备硅棒的沉积反应器的内部空间中安装芯装置，其中芯装置（C）由成形 金属芯体表面上的一个或多个分离层，并连接到电极装置（E），通过电极装置（E）供电来加热芯装置（C），并且将 反应气体（Gf）进入用于硅沉积的内部空间（Ri）中，从而在芯装置（C）的表面上沿向外的方向形成沉积输出。 根据本发明，沉积输出（D）和芯装置（C）可以容易地从通过硅沉积过程获得的硅棒输出分离，并且由金属芯的杂质引起的沉积输出的污染 元素（Ca）可以最小化，从而可以以更经济和方便的方式制备高纯度硅。

    EMERGENCY LIGHTING DEVICE
    12.
    发明申请
    EMERGENCY LIGHTING DEVICE 审中-公开
    紧急照明设备

    公开(公告)号：US20070097687A1

    公开(公告)日：2007-05-03

    申请号：US11307902

    申请日：2006-02-27

    Applicant: SANG-JIN MOON

    Inventor： SANG-JIN MOON

    IPC: F21V23/04

    CPC classification number: G08B5/36 ,  G08B7/06

    Abstract: Disclosed herein is an emergency lighting device. The emergency lighting device of the present invention includes a power supply unit, a sensing unit, an output unit, an input unit and an emergency lamp control unit. The present invention provides an emergency lighting device, which uses a remote controller to more easily examine whether auxiliary power is normally supplied, and sets an examination time, thus improving convenience in the use of the emergency lighting device.

    Abstract translation: 这里公开了一种应急照明装置。 本发明的应急照明装置包括电源单元，感测单元，输出单元，输入单元和应急灯控制单元。 本发明提供一种应急照明装置，其使用遥控器更容易地检查辅助电力是否正常供电，并设置检查时间，从而提高了应急照明装置的使用的便利性。

    Device for manufacturing semiconductor or metallic oxide ingot
    14.
    发明授权
    Device for manufacturing semiconductor or metallic oxide ingot 有权
    用于制造半导体或金属氧化物晶锭的装置

    公开(公告)号：US09528195B2

    公开(公告)日：2016-12-27

    申请号：US14239227

    申请日：2012-08-17

    Applicant: Sang Jin Moon ,  Won Wook So ,  Dong Soon Park ,  Myung Hoi Koo

    Inventor： Sang Jin Moon ,  Won Wook So ,  Dong Soon Park ,  Myung Hoi Koo

    IPC: C30B35/00 ,  C30B11/00 ,  C30B29/06 ,  C30B29/20 ,  C30B29/40 ,  B29C39/38 ,  B29C39/44

    CPC classification number: C30B11/003 ,  B29C39/38 ,  B29C39/44 ,  C30B11/006 ,  C30B29/06 ,  C30B29/20 ,  C30B29/40 ,  Y10T117/1092

    Abstract: Provided is an apparatus for manufacturing a semiconductor or metal oxide ingot by sequentially inducing a liquid-to-solid phase transition of a liquid raw material following a solidification direction, the apparatus including: a crucible containing a semiconductor or metal oxide raw material; a cooling unit spaced apart from the crucible at a predetermined distance in a vertical direction, when a height direction of the crucible is designated by the vertical direction and a direction perpendicular to the vertical direction is designated by a horizontal direction; a first heating unit spaced apart from the crucible at a predetermined distance in the horizontal direction and surrounding a circumferential surface of the crucible; and an insulating member provided between the crucible and the cooling unit in the horizontal direction, a position of the insulating member being shifted by a shifting unit.

    Abstract translation: 本发明提供一种通过依次在固化方向上引起液体原料的液相 - 固相转变来制造半导体或金属氧化物锭的装置，该装置包括：含有半导体或金属氧化物原料的坩埚; 当坩埚的高度方向由垂直方向指定并且垂直于垂直方向的方向由水平方向指定时，在垂直方向上以预定距离与坩埚隔开预定距离的冷却单元; 第一加热单元，其在水平方向上以预定距离与坩埚隔开并围绕坩埚的圆周表面; 以及绝缘构件，其在水平方向上设置在所述坩埚和所述冷却单元之间，所述绝缘构件的位置被移动单元移位。

    ORGANIC SEMICONDUCTOR COMPOUND, METHOD FOR PREPARING SAME, AND ORGANIC SEMICONDUCTOR DEVICE EMPLOYING SAME
    15.
    发明申请
    ORGANIC SEMICONDUCTOR COMPOUND, METHOD FOR PREPARING SAME, AND ORGANIC SEMICONDUCTOR DEVICE EMPLOYING SAME 有权
    有机半导体化合物，其制备方法和使用其的有机半导体器件

    公开(公告)号：US20140046013A1

    公开(公告)日：2014-02-13

    申请号：US14114065

    申请日：2012-04-26

    Applicant: Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

    Inventor： Sang Jin Moon ,  Jong Cheol Lee ,  Won Suk Shin ,  Sang Kyu Lee

    IPC: H01L51/00

    CPC classification number: H01L51/0074 ,  C07D495/04 ,  H01L51/0036

    Abstract: Provided are an organic semiconductor compound, a method for preparing same, a polymer compound having the organic semiconductor compound of the present invention as a monomer, and an organic semiconductor device containing the polymer compound. Said organic semiconductor compound has side chains in the chemical structure thereof, and is highly soluble in a solvent, and therefore the organic semiconductor compound can be effectively used in solution-based processes. The organic semiconductor device containing the polymer compound according to the present invention yields high manufacturing efficiency

    Abstract translation: 提供有机半导体化合物，其制备方法，具有本发明的有机半导体化合物作为单体的高分子化合物和含有高分子化合物的有机半导体器件。 所述有机半导体化合物在其化学结构中具有侧链，并且在溶剂中高度可溶，因此有机半导体化合物可以有效地用于基于溶液的方法。 含有本发明的高分子化合物的有机半导体装置的制造效率高

    Conductive polymer containing carbazole, and organic photovoltaic device using same
    17.
    发明授权
    Conductive polymer containing carbazole, and organic photovoltaic device using same 有权
    含有咔唑的导电聚合物和使用其的有机光伏器件

    公开(公告)号：US08519068B2

    公开(公告)日：2013-08-27

    申请号：US13259867

    申请日：2010-03-31

    Applicant: Sang Jin Moon ,  Won Suk Shin ,  Won Wook So ,  Hye Young Lee ,  Kyu Nam Kim ,  Sung Cheol Yoon ,  Chang Jin Lee

    Inventor： Sang Jin Moon ,  Won Suk Shin ,  Won Wook So ,  Hye Young Lee ,  Kyu Nam Kim ,  Sung Cheol Yoon ,  Chang Jin Lee

    IPC: C08G73/06 ,  C08G75/06 ,  C08F283/00 ,  C08G73/00 ,  C08G75/00 ,  C08L81/00

    CPC classification number: H01L51/0043 ,  C08G61/123 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/3142 ,  C08G2261/3241 ,  C08G2261/3244 ,  C08G2261/3246 ,  C08G2261/91 ,  H01L51/0036 ,  H01L51/0094 ,  Y02E10/549

    Abstract: The present invention relates to a 2,7-carbazole-containing polymer represented by formula 1 and an organic photovoltaic device comprising the conductive polymer as a photoelectric conversion material. The conductive polymer has high photon absorption efficiency and improved hole mobility and is prepared by introducing a specific amount of a carbazole compound either into a polymer, consisting only of a donor functional group containing one or more aromatic monomers, or into a donor-acceptor type polymer comprising a repeating acceptor group introduced into a donor functional group. The conductive polymer can be used as a photoelectric conversion material for organic thin film transistors (OTFTs) or organic light-emitting diodes (OLEDs). Furthermore, the invention provides an organic photovoltaic device comprising the carbazole-containing conductive polymer as an electron donor, and thus can achieve high photoelectric conversion efficiency in organic thin film solar cells.

    Abstract translation: 本发明涉及由式1表示的2,7-咔唑聚合物和包含导电聚合物作为光电转换材料的有机光伏器件。 导电聚合物具有高的光子吸收效率和改善的空穴迁移率，并且通过将特定量的咔唑化合物引入仅由含有一个或多个芳族单体的供体官能团组成的聚合物中，或者进入供体 - 受体型 包含引入供体官能团的重复受体基团的聚合物。 导电聚合物可以用作有机薄膜晶体管（OTFT）或有机发光二极管（OLED）的光电转换材料。 此外，本发明提供一种包含含咔唑的导电聚合物作为电子给体的有机光伏器件，因此可以在有机薄膜太阳能电池中实现高的光电转换效率。

    HIGH-OUTPUT APPARATUS FOR MANUFACTURING A POLYCRYSTAL SILICON INGOT FOR A SOLAR CELL
    18.
    发明申请
    HIGH-OUTPUT APPARATUS FOR MANUFACTURING A POLYCRYSTAL SILICON INGOT FOR A SOLAR CELL 有权
    用于制造太阳能电池的多晶硅纳米管的高输出装置

    公开(公告)号：US20130036769A1

    公开(公告)日：2013-02-14

    申请号：US13643422

    申请日：2011-04-05

    Applicant: Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

    Inventor： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

    IPC: F27B14/14

    CPC classification number: H01L31/182 ,  C30B11/002 ,  C30B11/003 ,  C30B17/00 ,  C30B28/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

    Abstract: The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein.; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.

    Abstract translation: 本发明涉及一种用于制造太阳能电池用多晶硅锭的高输出装置，更具体地，涉及一种通过在真空室中加热和熔化原料硅然后冷却而制造多晶硅锭的装置 所述熔融硅，其中所述装置包括：多个坩埚，其布置成在所述真空室内彼此水平分离，并且其中每个所述原料硅被填充以制造多晶硅锭; 在每个坩埚的外侧设置加热装置，以加热每个坩埚并熔化填充在其中的原料硅; 以及用于冷却坩埚的冷却装置，以使由加热装置熔化的硅在一个方向上被冷却并形成多晶锭。

    Methods for preparation of high-purity polysilicon rods using a metallic core means
    20.
    发明授权
    Methods for preparation of high-purity polysilicon rods using a metallic core means 有权
    使用金属芯制备高纯度多晶硅棒的方法

    公开(公告)号：US08216643B2

    公开(公告)日：2012-07-10

    申请号：US12160837

    申请日：2007-05-21

    Applicant: Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi ,  Sang Jin Moon

    Inventor： Hee Young Kim ,  Kyung Koo Yoon ,  Yong Ki Park ,  Won Choon Choi ,  Sang Jin Moon

    IPC: C23C16/24

    CPC classification number: C23C16/4581 ,  C01B33/035 ,  C23C16/24 ,  Y10T428/2913

    Abstract: A method for preparing a polysilicon rod using a metallic core means, including: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, the core means being constituted by forming at least one separation layer on the surface of a metallic core element and being connected to an electrode means, heating the core means by supplying electricity through the electrode means, and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. The deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared more economically and conveniently.

    Abstract translation: 一种使用金属芯装置制备多晶硅棒的方法，包括：将芯装置安装在用于制备硅棒的沉积反应器的内部空间中，所述芯装置通过在至少一个分离层的表面上形成 金属芯元件，与电极装置连接，通过电极装置供电来加热芯装置，并将反应气体供给到用于硅沉积的内部空间中，从而在表面上形成向外的沉积输出 核心手段。 沉积输出和芯装置可以容易地从通过硅沉积过程获得的硅棒输出分离，并且可以最小化由金属芯元件的杂质引起的沉积输出的污染，从而高纯度的硅可以 准备更经济，便捷。

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