公开(公告)号：US20060208273A1

公开(公告)日：2006-09-21

申请号：US10567482

申请日：2003-08-08

Applicant: Sang-Kyu Kang

Inventor： Sang-Kyu Kang

IPC: H01L33/00

CPC classification number: H01L33/08 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2 HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract translation: 本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。 本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO 2的间隙填充材料， ，Si 3 N 4，DBR（ZrO 2 / SiO 2 HfO 2）2， / SiO 2），聚酰胺等填充在微型发光柱之间的间隙中，通过CMP处理将发光体列阵列的顶面11和间隙填充材料平坦化， 则形成面积大的透明电极6，能够同时驱动所有的发光支柱。 另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

公开(公告)号：US20120117964A1

公开(公告)日：2012-05-17

申请号：US13189269

申请日：2011-07-22

Applicant: Dong Ho CHU ,  Sang Kyu Kang ,  Hyung Jin Kim ,  Guehyun Jung ,  Younsoo Im

Inventor： Dong Ho CHU ,  Sang Kyu Kang ,  Hyung Jin Kim ,  Guehyun Jung ,  Younsoo Im

IPC: F02B37/16

CPC classification number: F02M35/10157 ,  F02B33/44 ,  F02B33/446 ,  F02M35/10144 ,  F02M35/10236 ,  F02M35/10308 ,  Y02T10/144

Abstract: An intake system of an engine may include an intake line that is configured to supply cylinder of an engine with air, an exhaust line that exhaust gas combusted in the cylinder is exhausted, a housing disposed on the intake line and a compressor is disposed therein, the compressor is operated by a turbine disposed on an exhaust line, a recirculation line that recirculates the air from the intake line of a downstream side of the compressor to the intake line of an upstream side of the compressor, and an anti surge valve disposed on the recirculation line to open/close the recirculation line, wherein a length of a first section (l) that is straight from the anti surge valve is longer than two times the outlet diameter (d) of the anti surge valve in the recirculation line that is formed from the anti surge valve to an upstream side of the compressor.A distance (L) from the intake line that is connected to the recirculation line to the inlet of the housing may be longer than times the inlet diameter (D) of the housing that the compressor is disposed therein.Accordingly, while the intake air circulates the anti surge valve during a tip-out or acceleration period, the turbulent flow may be decreased and the flowing becomes smooth such that the noise is decreased and the emotional quality may be improved in the intake system of the engine.

Abstract translation: 发动机的进气系统可以包括：进气管，其被构造成供应发动机的气缸的空气;排气管，其中在所述气缸中燃烧的排气被排出;设置在所述进气管上的壳体和设置在其中的压缩机， 压缩机由设置在排气管上的涡轮机，使空气从压缩机的下游侧的进气管路再循环到压缩机的上游侧的进气管线的再循环管路，以及设置在压缩机的上游侧的防喘振阀 所述再循环管线用于打开/关闭所述再循环管线，其中从所述防喘振阀直线的第一部分（l）的长度长于所述再循环管线中的所述防喘振阀的出口直径（d）的两倍， 由防喘振阀形成到压缩机的上游侧。 与再循环管线连接到壳体入口的进气管线的距离（L）可以比压缩机设置在其中的壳体的入口直径（D）的时间长。 因此，在抽出或加速期间吸入空气使防喘振阀循环的同时，可以减少湍流，并且流动变得平滑，使得噪音降低，并且可以改善吸入系统的情绪质量 发动机。

公开(公告)号：US20110007576A1

公开(公告)日：2011-01-13

申请号：US12702809

申请日：2010-02-09

Applicant: Sang-kyu Kang ,  Ho-cheol Lee ,  Chi-sung Oh

Inventor： Sang-kyu Kang ,  Ho-cheol Lee ,  Chi-sung Oh

IPC: G11C7/10 ,  G11C7/00 ,  G11C8/00

CPC classification number: G11C7/1072 ,  G11C7/1006 ,  G11C7/1051 ,  G11C7/1057 ,  G11C7/1066 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096

Abstract: Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.

Abstract translation: 提供了包括多个输出缓冲器，选通控制单元和多个选通缓冲器的同步动态随机存取存储器（DRAM）半导体器件。 每个输出缓冲器都配置为输出一位数据。 选通控制单元被配置为响应于外部输入信号输出多个选通控制信号。 选通缓冲器连接到输出缓冲器和选通控制单元，并且每个选通缓冲器被配置为输出至少一个选通信号。 至少一些选通缓冲器响应于选通控制信号被激活，并且输出缓冲器响应于被激活的选通缓冲器输出的选通信号被激活。

公开(公告)号：US20090309107A1

公开(公告)日：2009-12-17

申请号：US12545795

申请日：2009-08-21

Applicant: Sang-Kyu Kang

Inventor： Sang-Kyu Kang

IPC: H01L33/00

CPC classification number: H01L33/08 ,  H01L33/32 ,  H01L33/42 ,  H01L33/44

Abstract: The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars 10 are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface 11 of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode 6 having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

Abstract translation: 本发明涉及一种高亮度的氮化物微型发光二极管（LED）及其制造方法。 本发明提供了一种具有高亮度的氮化物微型LED及其制造方法，其中在基板上形成多个微尺寸的发光柱10，诸如SiO2，Si3N4，DBR（ZrO2 / SiO2HfO2 / SiO 2），聚酰胺等填充在微尺寸的发光柱之间的间隙中，通过CMP处理使发光体列阵列的顶面11和间隙填充材料平坦化，然后将具有大尺寸的透明电极6 在其上形成区域，从而可以同时驱动所有发光柱。 另外，本发明提供了一种具有高亮度的氮化物微型LED，其中通过采用倒装芯片结构来增强微尺寸发光柱阵列上电极形成的均匀性。

公开(公告)号：US06407409B2

公开(公告)日：2002-06-18

申请号：US09836780

申请日：2001-04-16

Applicant: Hak Dong Cho ,  Sang Kyu Kang

Inventor： Hak Dong Cho ,  Sang Kyu Kang

IPC: H01L2922

CPC classification number: C30B25/00 ,  C30B25/02 ,  C30B29/406 ,  C30B29/60 ,  C30B29/64 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075

Abstract: A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.

Abstract translation: 提供了独立的单体晶体氮化镓（GaN）的同质外延生长的方法和装置，其中在反应器中成核GaN的步骤产生具有几个单层厚度的GaN成核层。 成核层得到稳定化，单晶体GaN从GaN成核层上的气相反应物生长。 反应器由超低氧不锈钢形成。