Abstract:
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.
Abstract:
An speed sensor for a rotating shaft includes a plurality of magnetic portions on the shaft that output a magnetic field from each of the magnetic portions, wherein the magnetic portions are integrally formed in the shaft by magnetically polarizing the shaft material itself. At least one magnetic field sensor is positioned proximate to the shaft for detecting the magnetic field from each of the magnetic portions and for outputting a signal corresponding to the angular speed of the shaft as the shaft rotates. The signal is useful for calculating the angular speed of the shaft, and the calculated angular speed value is useful for things like adjusting the angular speed of the shaft, monitoring the performance of the system in which the shaft is used, and for other purposes.
Abstract:
A cap assembly having a storage chamber for a secondary ingredient, which is adapted to a mouth of a container, comprising: a body having a mouth; a chamber part having a storage space for secondary ingredient in the body and a hole formed at the lower end thereof; said chamber part is sealed by a movable working member and is opened when the movable working member is removed from the hole upon removing the cap so that the secondary ingredient may be mixed with the first ingredient in the container, said the movable working member being adapted to maintain the opened hole, after moving to open the hole, thereby effectively mixing of the different ingredients.
Abstract:
The storage chamber for secondary material applicable to the discharging direction of contents stored in the container consists of body with storage space and inseparable operating section mounted around the globe. If above operating section moves up, opening and closing hole made or formed in the storage space of storage is opened and contents stored in the storage space is dropped and mixed with contents stored in the container. The mixed contents are discharged via a vent mounted on the top of operating section. A vent is not opened until the operating section is opened, and closing section of opening and closing hole is provided so that the opening and closing hole may not be not clogged after being opened.
Abstract:
Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.
Abstract:
Provided is a method for selectively functionalizing unmodified solid surface, not oxidized and nitrified, into an aldehyde group, and a method for immobilizing an active material such as bio material or functional material on the functionalized aldehyde solid surface through strong and stable chemical bonding. Differently from a conventional method immobilizing deoxyribonucleic acid (DNA) using a cross linker, the method of the present invention does not require a cross linker reaction step to thereby shorten a process. Also, since a cross linker is absent, the monomolecular layer on the surface of a device is thin, which reduces a perturbation effect by molecular layer. This is useful in fabrication of molecular electronic devices and bio-active devices. In addition, since the bio material or functional material is selectively immobilized only on the unmodified surface, the present invention can functionalize only a specific solid surface and develop a highly sensitive sensor and an improved functional device.
Abstract:
A structure for mixing different materials in a pouch container includes a spout main body provided with a spout hole through which mixture of first and second materials is exhausted. A cap is removably coupled on an outer portion of the spout hole. The first material is stored therein. A seal member is coupled to a lower end of the tube portion.
Abstract:
A system and method to detect angular rotation, linear displacement and/or surface deformations is presented. The method is based on the ability of a linear polarized light to interact with magnetic materials and to change its polarization angle due to Faraday effect. A basic structure of the system consists of a magneto-optic (MO) film with a two-domain structure and a single domain wall which are generated by gradient magnetic field produced by opposite polarity permanent magnets placed near the film. An AC magnetic field applied perpendicular to the MO film surface causes the magnetic domain wall in the MO film to oscillate at the same frequency. This leads to a detected output AC modulated signal. By measuring the temporal changes in this signal, information on angular rotation, linear displacement and/or surface deformation can be obtained.
Abstract:
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
Abstract:
Provided are a field effect transistor and a method of fabricating the same, wherein the field effect transistor is formed which has a hyperfine channel length by employing a technique for forming a sidewall spacer and adjusting the deposition thickness of a thin film. In the field effect transistor of the present invention, a source junction and a drain junction are thin, and the overlap between the source and the gate and between the drain and the gate is prevented, thereby lowering parasitic resistance. Further, the gate electric field is easily introduced to the drain extending region, so that the carrier concentration is effectively controlled in the channel at the drain. Also, the drain extending region is formed to be thinner than the source, so that the short channel characteristic is excellent.