BIOSENSOR, MANUFACTURING METHOD THEREOF, AND BIOSENSING APPARATUS INCLUDING THE SAME
    5.
    发明申请
    BIOSENSOR, MANUFACTURING METHOD THEREOF, AND BIOSENSING APPARATUS INCLUDING THE SAME 审中-公开
    生物传感器,其制造方法和包括其的生物传感装置

    公开(公告)号:US20100013030A1

    公开(公告)日:2010-01-21

    申请号:US12443376

    申请日:2007-08-30

    IPC分类号: H01L29/66 H01L21/30

    摘要: Provided is a biosensor with a three-dimensional multi-layered structure, a method for manufacturing the biosensor, and a biosensing apparatus including the biosensor. The biosensing apparatus includes: a chamber having an inlet through which a fluid containing a biomaterial enters and an outlet through which the fluid exits; and a plurality of biosensors inserted and fixed in the chamber. Each biosensor includes: a support unit having a fluid channel through which a fluid containing a biomaterial flows; and a sensing unit disposed on the support unit in such a way that the sensing unit is exposed three-dimensionally in the fluid channel of the support unit, the sensing unit being surface-treated with a reactive material that is to react with the biomaterial flowing through the fluid channel.

    摘要翻译: 本发明提供具有三维多层结构的生物传感器,生物传感器的制造方法以及包括生物传感器的生物传感装置。 所述生物传感装置包括:具有入口的腔室,含有生物材料的流体通过所述入口进入,所述流体通过所述出口流出; 以及插入并固定在所述室中的多个生物传感器。 每个生物传感器包括:具有流体通道的支撑单元,含有生物材料的流体通过该流体通道流动; 以及感测单元,其以这样的方式设置在所述支撑单元上,使得所述感测单元在所述支撑单元的流体通道中三维地暴露,所述感测单元用反应性材料进行表面处理,所述反应性材料与所述生物材料流动 通过流体通道。

    Silicon-Based Light Emitting Diode Using Side Reflecting Mirror
    7.
    发明申请
    Silicon-Based Light Emitting Diode Using Side Reflecting Mirror 有权
    使用侧反射镜的硅基发光二极管

    公开(公告)号:US20080290360A1

    公开(公告)日:2008-11-27

    申请号:US12096751

    申请日:2006-04-25

    IPC分类号: H01L33/00

    摘要: A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.

    摘要翻译: 提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。 硅基发光二极管包括具有多个沟槽的p型硅衬底,形成在硅衬底的每个沟槽上的发光二极管层,发光二极管层包括有源层,n型 掺杂层和透明电极层,以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。 每个凹槽的侧表面与发光二极管层分离并用作反射镜。该侧表面被称为侧反射镜。

    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR
    10.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
    使用场效应晶体管测量电压点的方法和装置

    公开(公告)号:US20110139637A1

    公开(公告)日:2011-06-16

    申请号:US13058120

    申请日:2008-12-16

    IPC分类号: G01N27/403 G01N27/414

    CPC分类号: G01N27/4145

    摘要: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

    摘要翻译: 提供了使用场效应晶体管测量等电点的方法和装置。 该方法包括提供场效应晶体管,该场效应晶体管包括衬底,设置在衬底上的源电极和漏极彼此间隔开的沟道区,以及在源电极和漏电极之间的沟道区域,提供具有第一浓度到沟道的第一电解质溶液 区域,并且测量源极和漏极之间的沟道区的第一电流值,提供具有大于第一浓度的第二浓度的第二电解质溶液,并测量源极之间的沟道区的第二电流值 和漏电极,并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。