摘要:
A method and apparatus of detecting a defect by inspecting a specimen in which a surface of a specimen on which plural patterns are formed is illuminated with an elongated shape light flux from one of plural directions which are different in elevation angle by switching an optical path of the light flux emitted from an illuminating light source in accordance with a kind of defect to be detected. Plural optical images of the specimen illuminated by the elongated shape light flux are captured with plural image sensors installed in different elevation angle directions by changing an enlarging magnification in accordance with a density of the pattern formed on the sample in an area irradiated with the illuminating elongated shape light flux. A defect on the specimen is detected by processing the images captured by the plural image sensors.
摘要:
An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser focused onto a line on a surface of the specimen, a table unit which mounts the specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks diffraction light resulting from patterns formed on the specimen, a signal processor which processes a signal outputted from the image sensor of the detection optical unit to extract defects of the specimen, and a display unit which displays information of defects extracted by the signal processor. The filter is adjustable.
摘要:
The present invention provides an inspection apparatus and inspection method. The inspection apparatus includes a stage mechanism for supporting an object under inspection. A spatial filter is provided in the detection optical system to inspect the object. A printer is used to print the results of the spatial filter. The spatial filter can be provided in the form of a Fourier transformed image.
摘要:
The present invention is an apparatus for inspecting foreign particles/defects, comprises an illumination optical system, a detection optical system, a shielding unit which is provided in said detection optical system to selectively shield diffracted light pattern coming from circuit pattern existing on an inspection object and an arithmetic processing system, wherein said shielding unit comprises a micro-mirror array device or a reflected type liquid crystal, or a transmission type liquid crystal, or an object which is transferred a shielding pattern to an optical transparent substrate, or a substrate or a film which is etched so as to leave shielding patterns, or an optical transparent substrate which can be changed in transmission by heating, sudden cold, or light illumination, or change of electric field or magnetic field, or a shielding plate of cylindrical shape or plate shape.
摘要:
Reflected light caused by the state of the surface of a wafer, a foreign material or a defect is superimposed on a haze frequency component caused by the type and thickness of a film or a surface irregularity. It has therefore been difficult to accurately measure the haze frequency component by use of a fixed threshold value. In order to detect a haze frequency component caused by a haze present on the surface of an object to be inspected, light propagating from the object to be inspected is detected and converted into an electric signal. The electric signal is sampled at a predetermined sampling time interval and converted into digital data. A frequency component caused by a foreign material, a defect or the like is separated from the digital data to ensure that a haze frequency component is selected. The haze frequency component is caused by a stain attached to the surface of the wafer, hazy tarnish, a surface irregularity or the like.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
An apparatus for detecting defects on a specimen including am illumination optical unit which obliquely projects a laser onto a region which is longer in one direction than in a direction transverse to said one direction on a surface of a specimen, a table unit which mounts said specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from said specimen in both directions of the one direction and the direction transverse and which reflected light in both directions is formed on said image sensor while said table is moving, a signal processor which processes a signal outputted from said image sensor of said detection optical unit to extract defects of said specimen. A display unit which displays information of defects extracted by said signal processor.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.
摘要:
A system and method for determining measurement results of a dark-field inspection apparatus up to a microscopic area. A dark-field inspection apparatus is calibrated using a reference wafer having microroughness of an irregular asperity pattern accurately formed on a surface, and the microroughness of the surface having an ensured microroughness degree. This microroughness is measured by using an AFM, and an expected haze value is obtained based on the measured value. Then, haze of the surface of the reference wafer is measured by the dark-field inspection apparatus to be inspected to obtain an actually-measured haze value, and a difference between the expected haze value and the actually-measured haze value is obtained. Based on this difference, a haze measurement parameter of the dark-field inspection apparatus is adjusted so that the actually-measured haze value and the expected haze value match each other.