Abstract:
An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A camera calibration device 10 is mounted on a predetermined position of a movable object 100 and includes a camera 11 configured to take an image including an index 41 provided outside the movable object 100, an image superimposing unit 122 configured to generate a superimposed image by superimposing a calibration object 42 having a position adjustment part and a rotation adjustment part on the image taken by the camera 11, and a calculation unit 124 configured to calculate, based on a position of the calibration object 42 after being shifted in the superimposed image such that an end or a center of the index 41 meets the position adjustment part and a part of the index other than the end or the center overlaps the rotation adjustment part, parameters relative to a pan angle, a tilt angle and a roll angle for calibration of the camera mounting position.
Abstract:
A circuit module includes: a lighting control circuit that controls lighting of a semiconductor light emitting element; a first heat radiating member on which the lighting control circuit is mounted; a second heat radiating member that is separated from the first heat radiating member and has a surface on which the semiconductor light emitting element is mounted; and a connecting mechanism having both a housing that connects the first heat radiating member and the second heat radiating member together and a conductive portion that transmits a signal from the lighting control circuit to the semiconductor light emitting element. The housing is formed of a material having a coefficient of thermal conductivity lower than those of the first heat radiating member and the second heat radiating member.
Abstract:
Disclosed is an HJFET 110 which comprises: a channel layer 12 composed of InyGa1-yN (0≦y≦1); a carrier supply layer 13 composed of AlxGa1-xN (0≦x≦1), the carrier supply layer 13 being provided over the channel layer 12 and including at least one p-type layer; and a source electrode 15S, a drain electrode 15D and a gate electrode 17 which are disposed facing the channel layer 12 through the p-type layer, and provided over the carrier supply layer 13. The following relational expression is satisfied: 5.6×1011x
Abstract translation:公开了一种HJFET 110,其包括:由In y Ga 1-y N(0 @ y 1)组成的沟道层12; 由Al x Ga 1-x N(0 @ x 1)构成的载流子供给层13,载流子供给层13设置在沟道层12上并且包括至少一个p型层; 以及源极电极15S,漏极电极15D和栅极电极17,其通过p型层面对沟道层12,并且设置在载流子供给层13上。满足以下关系式:5.6×10×11× NA×eta×t [cm-2] <5.6×1013x,其中x表示载体供给层的Al组成比,t表示所述p型层的厚度,NA表示杂质浓度,eta表示活化 比。
Abstract:
In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample.
Abstract:
A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer (2′) is formed on a substrate (1′). A p-type conductive layer (3′) is formed thereon. A second n-type conductive layer (4′) is formed thereon. On the under surface of the substrate (1′), there is a drain electrode (13′) connected to the first n-type conductive layer (2′). On the upper surface of the substrate (1′), there is a source electrode (11′) in ohmic contact with the second n-type conductive layer (4′), and a gate electrode (12′) in contact with the first n-type conductive layer (2′), p-type conductive layer (3′), the second n-type conductive layer (4′) through an insulation film (21′). The gate electrode (12′) and the source electrode (11′) are alternately arranged. The p-type conductive layer (3′) includes In.
Abstract:
A granulating method is a method in which powder containing a water-soluble component is granulated. In the disclosed granulating method, a dispersion element, wherein fine water droplets are dispersed in superheated steam, is expelled from a nozzle, and thus the dispersion element and powder in a flowing state come into contact with one another. It is preferable that the mass ratio of superheated steam contained in the dispersion element, as a mass ratio found from the theoretical flow amount of superheated steam expelled from the nozzle, and the actual flow amount of water supplied to the nozzle, be set in a range of 20-70 mass %.
Abstract:
A semiconductor device includes a lower barrier layer 12 composed of a layer of AlxGa1-xN (0≦x≦1) in a state of strain relaxation, and a channel layer 13, which is composed of a layer of InyGa1-yN (0≦y≦1) disposed on the lower barrier layer 12, has band gap that is smaller than band gap of the lower barrier layer 12, and exhibits compressive strain. A gate electrode 1G is formed over the channel layer 13 via an insulating film 15 and a source electrode 1S and a drain electrode 1D serving as ohmic electrodes are formed over the channel layer 13. The insulating film 15 is constituted of polycrystalline or amorphous member.
Abstract translation:半导体器件包括在应变松弛的状态下由Al x Ga 1-x N(0&amp; nlE; x&nlE; 1)层构成的下阻挡层12,以及由In y Ga 1-y N(0&lt; nlE; 1)层组成的沟道层13。 y); 1)设置在下阻挡层12上,具有小于下阻挡层12的带隙的带隙,并且表现出压缩应变。 在沟道层13上经由绝缘膜15形成栅极电极1G,在沟道层13上形成有用作欧姆电极的源电极1S和漏电极1D。绝缘膜15由多晶或非晶构成。
Abstract:
A container-enclosed fullerene, a method of manufacturing the same, and a method of storing fullerene are provided, that make it possible to inhibit alteration of fullerene, especially that make it possible to prevent degradation of the solubility to solvent. A container-enclosed fullerene includes fullerene hermetically enclosed in a container with a high degree of vacuum. The internal pressure of the container is preferably 10 Pa or lower. The fullerene is preferably a metal encapsulated fullerene. The container-enclosed fullerene is manufactured by filling fullerene in a container, evacuating the container, and thereafter sealing the container.
Abstract:
A laser machining device 1 includes a laser light source 10, a spatial light modulator 20, a controller 22, a converging optical system 30, and a shielding member 40. The phase-modulating spatial light modulator 20 inputs a laser beam outputted from the laser light source 10, displays a hologram modulating a phase of the laser beam at each of a plurality of pixels arranged two-dimensionally, and outputs the phase-modulated laser beam. The controller 22 causes the spatial light modulator 20 to display a plurality of holograms sequentially, lets the converging optical system 30 converge the laser beam outputted from the spatial light modulator 20 at converging positions having a fixed number of M, selectively places N converging positions out of the M converging positions into a machining region 91, and machines an object to be machined 90.
Abstract:
An occupant detection sensor for detecting an occupant seating state on a seat comprises: a contact pressure sensor section including a pair of opposed electrodes arranged parallel to a seating face part of the seat; an electrostatic sensor section including a main electrode arranged parallel to the seating face part of the seat and a guard electrode arranged between the main electrode and a seat frame, the guard electrode and the main electrode having a same electric potential; a capacitance measuring section for measuring a first capacitance between the opposed electrodes and a second capacitance between the main electrode and ground; and an occupant distinguishing section for distinguishing a seating state of the occupant based on the first capacitance and the second capacitance.