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公开(公告)号：US08003494B2
公开(公告)日：2011-08-23
申请号：US12676874
申请日：2008-08-06
IPC分类号： H01L21/46
CPC分类号： H01L21/26533 , H01L21/76243 , H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×1015 to 5×1016 atoms/cm2, whereby there can be obtained a bonded wafer being excellent in the thickness uniformity after thinning and having a dramatically improved surface roughness.
摘要翻译： 在通过粘合用于有源层的晶片和用于支撑层的晶片并且使根据本发明的有源层的晶片变薄的方法来制造接合晶片的方法中，在保持温度的状态下将氧离子注入用于有源层的晶片 的活性层的晶片在5×10 15〜5×10 16原子/ cm 2的剂量下在200℃以下，由此可以获得在变薄后的厚度均匀性优异并且显着改善表面粗糙度的接合晶片。
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公开(公告)号：US07927957B2
公开(公告)日：2011-04-19
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过包括氧离子注入步骤的方法在具有指定晶片面的有源层的硅晶片上制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
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公开(公告)号：US20080213974A1
公开(公告)日：2008-09-04
申请号：US11957674
申请日：2007-12-17
申请人： Hidehiko OKUDA , Tatsumi KUSABA , Akihiko ENDO
发明人： Hidehiko OKUDA , Tatsumi KUSABA , Akihiko ENDO
IPC分类号： H01L21/30
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76251 , H01L21/76256
摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.
摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。
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公开(公告)号：US07416960B2
公开(公告)日：2008-08-26
申请号：US11855754
申请日：2007-09-14
申请人： Akihiko Endo , Tatsumi Kusaba , Hidehiko Okuda , Etsurou Morita
发明人： Akihiko Endo , Tatsumi Kusaba , Hidehiko Okuda , Etsurou Morita
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.
摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。
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公开(公告)号：US20080020514A1
公开(公告)日：2008-01-24
申请号：US11880144
申请日：2007-07-20
申请人： Hidehiko Okuda , Tatsumi Kusaba
发明人： Hidehiko Okuda , Tatsumi Kusaba
IPC分类号： H01L21/02
CPC分类号： H01L21/76254
摘要： A bonded wafer is produced by a method comprising a step of implanting ions of a light element such as hydrogen, helium or the like into a wafer for active layer at a predetermined depth position to form an ion implanted layer, a step of bonding the wafer for active layer to a wafer for support substrate through an insulating film, a step of exfoliating the wafer at the ion implanted layer, a first heat treatment step of conducting a sacrificial oxidation for reducing damage on a surface of an active layer exposed through the exfoliation and a second heat treatment step of raising a bonding strength, in which the second heat treatment step is continuously conducted after the first heat treatment step without removing an oxide film formed on the surface of the active layer.
摘要翻译： 通过包括将诸如氢，氦等的光元件的离子注入预定深度位置的有源层的晶片以形成离子注入层的步骤，制造粘合晶片，将晶片接合的步骤 通过绝缘膜将活性层提供到用于支撑衬底的晶片，在离子注入层剥离晶片的步骤，进行牺牲氧化以减少通过剥离暴露的活性层的表面上的损伤的第一热处理步骤 以及提高接合强度的第二热处理步骤，其中在第一热处理步骤之后连续进行第二热处理步骤而不去除形成在有源层表面上的氧化膜。
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公开(公告)号：US20080014717A1
公开(公告)日：2008-01-17
申请号：US11855754
申请日：2007-09-14
申请人： Akihiko Endo , Tatsumi Kusaba , Hidehiko Okuda , Etsurou Morita
发明人： Akihiko Endo , Tatsumi Kusaba , Hidehiko Okuda , Etsurou Morita
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.
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公开(公告)号：US20070028945A1
公开(公告)日：2007-02-08
申请号：US11197515
申请日：2005-08-05
申请人： Tatsumi Kusaba
发明人： Tatsumi Kusaba
CPC分类号： C04B41/87 , C04B41/009 , C04B41/5059 , C04B41/52 , C04B41/89 , C30B31/14 , C30B35/00 , C04B41/4531 , C04B41/0072 , C04B41/4558 , C04B41/459 , C04B41/5035 , C04B35/565 , C04B35/52 , C04B35/573
摘要： A method for achieving high purity in a jig for semiconductor heat treatment includes subjecting a semiconductor heat treatment jig made of a substrate having a surface covered with a silicon carbide film grown by chemical vapor deposition or a semiconductor heat treatment jig made of a silicon carbide film grown by chemical vapor deposition to high-temperature oxidation heat treatment so as to form an oxide film on a surface of the silicon carbide film, and removing the oxide film.
摘要翻译： 一种用于半导体热处理的夹具实现高纯度的方法包括对由具有由化学气相沉积生长的碳化硅膜覆盖的表面的基板或由碳化硅膜制成的半导体热处理夹具制成的半导体热处理夹具 通过化学气相沉积生长到高温氧化热处理，以在碳化硅膜的表面上形成氧化膜，并除去氧化物膜。
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公开(公告)号：US20100068867A1
公开(公告)日：2010-03-18
申请号：US12557809
申请日：2009-09-11
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76256
摘要： A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).
摘要翻译： 通过在具有指定晶片面的有源层硅晶片上的氧离子注入步骤的方法制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。
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公开(公告)号：US20090258475A1
公开(公告)日：2009-10-15
申请号：US12384819
申请日：2009-04-09
申请人： Akihiko Endo , Tatsumi Kusaba
发明人： Akihiko Endo , Tatsumi Kusaba
IPC分类号： H01L21/762
CPC分类号： H01L21/76243 , H01L21/30625 , H01L21/31111
摘要： Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.
摘要翻译： 即使在活性层用晶片中的氧离子注入层不是完全连续的SiO 2层，而是与Si或SiO x部分混合的层，所以通过这样除去，提供了一种制造接合晶片的方法，其中可以 通过在去除接合晶片上的氧离子注入层的步骤中用氧化溶液和HF溶液重复处理，有效地除去氧离子注入层。
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公开(公告)号：US07601227B2
公开(公告)日：2009-10-13
申请号：US11197515
申请日：2005-08-05
申请人： Tatsumi Kusaba
发明人： Tatsumi Kusaba
IPC分类号： B08B7/04
CPC分类号： C04B41/87 , C04B41/009 , C04B41/5059 , C04B41/52 , C04B41/89 , C30B31/14 , C30B35/00 , C04B41/4531 , C04B41/0072 , C04B41/4558 , C04B41/459 , C04B41/5035 , C04B35/565 , C04B35/52 , C04B35/573
摘要： A method for achieving high purity in a jig for semiconductor heat treatment includes subjecting a semiconductor heat treatment jig made of a substrate having a surface covered with a silicon carbide film grown by chemical vapor deposition or a semiconductor heat treatment jig made of a silicon carbide film grown by chemical vapor deposition to high-temperature oxidation heat treatment so as to form an oxide film on a surface of the silicon carbide film, and removing the oxide film.
摘要翻译： 一种用于半导体热处理的夹具实现高纯度的方法包括对由具有由化学气相沉积生长的碳化硅膜覆盖的表面的基板或由碳化硅膜制成的半导体热处理夹具制成的半导体热处理夹具 通过化学气相沉积生长到高温氧化热处理，以在碳化硅膜的表面上形成氧化膜，并除去氧化物膜。
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