Method for pulling a single crystal
    11.
    发明授权
    Method for pulling a single crystal 失效
    拉单晶的方法

    公开(公告)号:US5993539A

    公开(公告)日:1999-11-30

    申请号:US19982

    申请日:1998-02-06

    Applicant: Teruo Izumi

    Inventor: Teruo Izumi

    CPC classification number: C30B29/06 C30B15/36

    Abstract: In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. However, in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation cannot be excluded and propagates to the single crystal. In the present invention, when the distance between the lowest end of the seed crystal and the melt is 10-100 mm, the seed crystal is caused to stop descending and is preheated. Then, by bringing the seed crystal into contact with the melt at a gradually decreased descent speed, dislocation is not induced to the single crystal and the single crystal is formed without a neck.

    Abstract translation: 在用于拉伸单晶的常规方法中,已经形成具有较小直径的颈部,以便排除将晶种浸入熔体中引起的位错。 然而,在拉出12英寸以上的大直径的重单晶时,单晶不能被支撑和落下。 当颈部的直径足够大以防止坠落时,不能排除位错并传播到单晶。 在本发明中,当晶种的最低端与熔体之间的距离为10〜100mm时,使晶种停止下降并预热。 然后,通过以逐渐降低的下降速度使晶种与熔体接触,不会对单晶发生位错,并且在没有颈部的情况下形成单晶。

    Process for producing thick-film tape-shaped re-type (123) superconductor
    12.
    发明授权
    Process for producing thick-film tape-shaped re-type (123) superconductor 失效
    生产厚膜带状再型(123)超导体的方法

    公开(公告)号:US08409657B2

    公开(公告)日:2013-04-02

    申请号:US12086294

    申请日:2006-12-07

    CPC classification number: H01L39/2451

    Abstract: A production process of a thick-film tape-shaped RE-type (123) superconductor having a high critical current value. The production process has the steps of providing a composite substrate having Gd2Zr2O7 and CeO2 stacked in that order onto a Hastelloy substrate, coating a raw material solution prepared by dissolving a trifluoroacetate of Y and Ba and a naphthenate of Cu onto the composite substrate, heat treating the coated composite substrate by calcination, then subjecting the calcined assembly to intermediate heat-treatment at a temperature below the temperature of heat-treatment for superconductor production, and then heat treating the assembly in an argon gas atmosphere under conditions of highest heating temperature 760° C., water vapor partial pressure 13.5%, and oxygen partial pressure 0.09% for superconductor production to produce a tape-shaped RE-type (123) superconductor having a YBCO superconducting film having a thickness of more than about 2 μm.

    Abstract translation: 具有高临界电流值的厚膜带状RE型(123)超导体的制造方法。 该制造方法具有以下步骤:将具有Gd 2 Zr 2 O 7和CeO 2的复合基板依次层叠在Hastelloy基板上,涂布通过将Y和Ba的三氟乙酸盐和Cu的环烷酸盐溶解在复合基板上而制备的原料溶液, 通过煅烧对涂覆的复合基材进行煅烧,然后在低于制备超导体的热处理温度的温度下对煅烧组件进行中间热处理,然后在氩气气氛中在最高加热温度760℃的条件下热处理该组件 C,水蒸气分压为13.5%,氧分压为0.09%,制造出具有厚度大于约2μm的YBCO超导膜的带状RE型(123)超导体。

    Method of and apparatus for manufacturing tape-formed oxide superconductor
    13.
    发明授权
    Method of and apparatus for manufacturing tape-formed oxide superconductor 失效
    制造带状氧化物超导体的方法和装置

    公开(公告)号:US08124171B2

    公开(公告)日:2012-02-28

    申请号:US11385742

    申请日:2006-03-22

    Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction. Even when the tape-formed wire material (6) is large in area, the tape-formed oxide superconductor has superconducting characteristics being uniform in it widthwise direction, and it can be manufactured at high speed.

    Abstract translation: 制造带状氧化物超导体的方法,其中带状线材(图1中的6)在一对卷轴(5a和5b)之间延伸。 此外,从反应性气体供给管(3a)的气体供给口向带状线材(6)的上侧膜表面垂直地供给反应性气体, 将导线材料形成为超导层,同时从反应后排出气体的排出管(4a,4b)的排气口排出反应后的气体。 同样地,将反应性气体垂直地供给到带状线材(6)的下侧膜表面,以使该带状线材的膜体与超导层反应,同时, 反应后的气体从排出管(4c,4d)的排气口排出,排出反应后的气体。 即使当带状线材(6)的面积大时,带状氧化物超导体也具有在宽度方向上均匀的超导特性,并且可以高速制造。

    RE-TYPE OXIDE SUPERCONDUCTING WIRE AND PROCESS FOR PRODUCING THE SAME
    14.
    发明申请
    RE-TYPE OXIDE SUPERCONDUCTING WIRE AND PROCESS FOR PRODUCING THE SAME 有权
    RE型氧化物超导线及其制造方法

    公开(公告)号:US20110124508A1

    公开(公告)日:2011-05-26

    申请号:US12811141

    申请日:2008-12-17

    CPC classification number: H01L39/2425 H01L39/126 H01L39/2483 Y10T29/49014

    Abstract: A RE-type oxide superconducting wire having excellent angular dependence for magnetic field of Jc is obtained by finely dispersing magnetic flux pinning centers into a superconductor. A mixed solution which comprises a metal-organic complex solution including a metal element which composes a RE-type oxide superconductor whose Ba content is reduced and a metal-organic complex solution including at least one or more kinds of metals which are selected from Zr, Ce, Sn, or Ti which has a larger affinity for Ba is coated onto an intermediate layer of a composite substrate, and the assembly is then calcined to disperse artificially and finely oxide particles (magnetic flux pinning centers) including Zr. Thus, the angular dependence for magnetic field (Jc,min/Jc,max) of Jc can be remarkably improved.

    Abstract translation: 通过将磁通钉扎中心精细地分散到超导体中,获得对Jc的磁场具有优异的角度依赖性的RE型氧化物超导线。 一种混合溶液,其包含含有金属元素的金属有机络合物溶液,所述金属有机络合物溶液中含有Ba含量减少的RE型氧化物超导体和含有选自Zr, 对Ba具有较大亲合力的Ce,Sn或Ti涂覆在复合衬底的中间层上,然后将该组件煅烧以分散包括Zr的人造和细小氧化物颗粒(磁通钉扎中心)。 因此,Jc的磁场的角度依赖性(Jc,min / Jc,max)可以显着提高。

    Continuous observation apparatus and method of magnetic flux distribution
    16.
    发明申请
    Continuous observation apparatus and method of magnetic flux distribution 失效
    连续观察装置及磁通分布方法

    公开(公告)号:US20070108974A1

    公开(公告)日:2007-05-17

    申请号:US11514883

    申请日:2006-09-05

    CPC classification number: G01R33/1253 G01R33/1238

    Abstract: A continuous observation apparatus of magnetic flux distribution in which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is provided. A method of continuously observing magnetic flux by which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is also provided.

    Abstract translation: 提供了一种磁通量分布的连续观察装置,其中将包含超导材料或磁性材料的长样品转移到观察位置,并且沿着样品的纵向方向上的每个特定区域依次观察磁通量。 还提供了连续观察磁通量的方法,其中将含有超导材料或磁性材料的长样品转移到观察位置,并且沿着样品的纵向方向上的每个特定区域依次观察磁通量。

    Method of and apparatus for manufacturing tape-formed oxide superconductor
    17.
    发明申请
    Method of and apparatus for manufacturing tape-formed oxide superconductor 失效
    制造带状氧化物超导体的方法和装置

    公开(公告)号:US20060216407A1

    公开(公告)日:2006-09-28

    申请号:US11385742

    申请日:2006-03-22

    Abstract: A method of manufacturing a tape-formed oxide superconductor, in which a tape-formed wire material (6 in FIG. 1) is extended between a pair of reels (5a and 5b). Besides, a reactive gas is supplied form the gas supply ports of a reactive gas supply pipe (3a) vertically to the upper side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, a gas after the reaction is discharged from the gas discharge ports of discharge pipes (4a and 4b) for discharging the gas after the reaction. Likewise, the reactive gas is supplied vertically to the lower side film surface of the tape-formed wire material (6), so as to react the film body of this tape-formed wire material into a superconducting layer, while at the same time, the gas after the reaction is discharged from the gas discharge ports of discharge pipes (4c and 4d) for discharging the gas after the reaction. Even when the tape-formed wire material (6) is large in area, the tape-formed oxide superconductor has superconducting characteristics being uniform in it widthwise direction, and it can be manufactured at high speed.

    Abstract translation: 一种制造带状氧化物超导体的方法,其中带状线材(图1中的6)在一对卷轴(5a和5b)之间延伸。 此外,从反应性气体供给管(3a)的气体供给口向带状线材(6)的上侧膜表面垂直地供给反应气体,以使该带的膜体反应 形成的导线材料进入超导层,同时反应之后的气体从排出管(4a和4b)的气体排出口排出,用于在反应之后排出气体。 同样地,将反应性气体垂直地供给到带状线材(6)的下侧膜表面,以使该带状线材的膜体与超导层反应,同时, 反应后的气体从排气管(4c和4d)的排气口排出,用于排出反应后的气体。 即使当带状线材(6)的面积大时,带状氧化物超导体也具有在宽度方向上均匀的超导特性,并且可以高速制造。

    Method and apparatus for pulling a single crystal
    19.
    发明授权
    Method and apparatus for pulling a single crystal 失效
    用于拉出单晶的方法和装置

    公开(公告)号:US5916364A

    公开(公告)日:1999-06-29

    申请号:US930361

    申请日:1998-01-08

    Applicant: Teruo Izumi

    Inventor: Teruo Izumi

    CPC classification number: C30B15/36 C30B15/22

    Abstract: Methods and apparatuses for pulling a single crystal. In a conventional method for pulling a single crystal, a neck having a smaller diameter has been formed in order to exclude dislocation induced in dipping a seed crystal into a melt. But in pulling a heavy single crystal having a large diameter of 12 inches or more, the single crystal cannot be supported and falls. When the diameter of the neck is large enough to prevent the fall, the dislocation can not be excluded and propagates to the single crystal. In the present invention, using an apparatus for pulling a single crystal having a laser beam generator or an incoherent light generating-inducing apparatus, the temperature of the front portion of the seed crystal is gradually raised by being irradiated with the laser beam or the incoherent light, and then, the seed crystal is dipped into the melt. As a result, the induction of the dislocation to the seed crystal caused by a thermal stress is prevented. Then, the single crystal is pulled without forming a neck. Therefore, a heavy single crystal can be pulled. The methods and the apparatuses for pulling a single crystal are used for pulling a single crystal ingot such as an upsized silicon single crystal.

    Abstract translation: PCT No.PCT / JP97 / 00594 Sec。 371日期1998年1月8日 102(e)日期1998年1月8日PCT提交1997年2月27日PCT公布。 公开号WO97 / 32059 日期1997年9月4日拉单晶的方法和装置。 在用于拉伸单晶的常规方法中,已经形成具有较小直径的颈部,以便排除将晶种浸入熔体中引起的位错。 但是在拉出12英寸以上的大直径的重晶体时,单晶不能被支撑和下降。 当颈部的直径足够大以防止坠落时,不能排除位错并传播到单晶。 在本发明中,使用用于拉动具有激光束发生器或非相干光产生诱导装置的单晶的装置,通过用激光束或不相干的方式照射晶种的前部的温度逐渐升高 光,然后将晶种浸入熔体中。 结果,防止了由热应力引起的对晶种的位错的诱导。 然后,拉出单晶而不形成颈部。 因此,可以拉出重的单晶。 用于拉取单晶的方法和装置用于拉取单晶锭例如大尺寸硅单晶。

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