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    PROCESS FOR PRODUCING TAPE-SHAPED Re-TYPE (123) SUPERCONDUCTOR
    1.
    发明申请
    PROCESS FOR PRODUCING TAPE-SHAPED Re-TYPE (123) SUPERCONDUCTOR 审中-公开
    用于生产带状再型（123）超导体的方法

    公开(公告)号：US20090270263A1

    公开(公告)日：2009-10-29

    申请号：US12376099

    申请日：2007-06-12

    申请人： Yuji Aoki ,  Koichi Nakaoka ,  Junko Matsuda ,  Masateru Yoshizumi ,  Teruo Izumi ,  Yuh Shiohara

    发明人： Yuji Aoki ,  Koichi Nakaoka ,  Junko Matsuda ,  Masateru Yoshizumi ,  Teruo Izumi ,  Yuh Shiohara

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2425 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1241

    摘要： This invention provides a production process of a tape-shaped superconductor which can realize high Jc and Ic values by virtue of the elimination of the cause of generation of cracks and deterioration of an electrical connectivity in crystal grain boundaries. In producing an Re-base (123) superconductor on a substrate by an MAD process, the use of a raw material solution having a Re:Ba:Cu molar ratio of 1:X:3, wherein X is a Ba molar ratio satisfying X

    摘要翻译： 本发明提供了一种带状超导体的制造方法，其通过消除裂纹的产生和晶粒边界的电连接性的劣化，可以实现高的Jc和Ic值。 在通过MAD工艺在基板上制造Re（123）超导体时，使用Re:Ba:Cu摩尔比为1:X:3的原料溶液，其中X为满足X的Ba摩尔比 <2（优选1.0 <= X <= 1.8，特别是1.3 <= x <= 1.7）可以实现具有Jc = 3.20MA / cm 2的超导性和Ic = 525A的厚膜带状超导体的生产 / cm（X = 1.5）。

    Superconducting wire and superconducting coil employing it
    3.
    发明申请
    Superconducting wire and superconducting coil employing it 有权
    超导线和超导线圈采用它

    公开(公告)号：US20060077025A1

    公开(公告)日：2006-04-13

    申请号：US10514194

    申请日：2004-07-13

    申请人： Kazuo Funaki ,  Masataka Iwakuma ,  Takanobu Kisu ,  Akira Tomioka ,  Toshio Uede ,  Hiroshi Fuji ,  Teruo Izumi ,  Yuh Shiohara

    发明人： Kazuo Funaki ,  Masataka Iwakuma ,  Takanobu Kisu ,  Akira Tomioka ,  Toshio Uede ,  Hiroshi Fuji ,  Teruo Izumi ,  Yuh Shiohara

    IPC分类号： H01F6/00

    CPC分类号： H01L39/143 ,  H01F6/02 ,  H01F6/06 ,  H01F27/2852 ,  H01F27/2871 ,  H01F27/346 ,  Y10S505/704 ,  Y10S505/705 ,  Y10S505/879 ,  Y10S505/884 ,  Y10S505/887

    摘要： Tape-shaped superconducting wires are made by forming a superconducting film on the substrate. At least the superconducting film is slit, electrically separated into a plurality of superconducting film parts each having a rectangular cross section and arranged in parallel to form parallel conductors. This provides superconducting wires capable of containing AC loss. A superconducting coil is made by winding the superconducting wires described above, wherein the provision of a coil structure containing at least partially a part wherein the perpendicular interlinkage magnetic flux acting among various conductor elements of the parallel conductors by the distribution of the magnetic field generated by the superconducting coils cancel mutually enables a simple structure without transposition to cancel mutually the interlinkage magnetic flux by the perpendicular magnetic field against wires, to contain circulating current within the wires by the perpendicular magnetic field and to make shunt current uniform. This provides a low-loss superconducting coil.

    摘要翻译： 带状超导线通过在基板上形成超导膜而制成。 至少超导膜被切割，电分离成多个超导膜部件，每个超导膜部件具有矩形横截面并且平行布置以形成平行的导体。 这提供了能够包含AC损耗的超导线。 通过缠绕上述超导线来制造超导线圈，其中提供线圈结构，其至少部分地包含部分，其中通过由所述平行导体的各个导体元件中的磁场分布产生的磁场的分布而作用的垂直互连磁通量 超导线圈相互抵消，能够实现简单的结构，而不会发生转移，以相互抵消通过垂直磁场对线的互连磁通，以通过垂直磁场包含线内的循环电流并使分流电流均匀。 这提供了一个低损耗超导线圈。

    Single crystalline base thin film
    4.
    发明申请
    Single crystalline base thin film 审中-公开
    单晶基底薄膜

    公开(公告)号：US20060009362A1

    公开(公告)日：2006-01-12

    申请号：US10526896

    申请日：2003-10-29

    申请人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

    发明人： Katsuya Hasegawa ,  Teruo Izumi ,  Yuh Shiohara ,  Yoshihiro Sugawara ,  Tsukasa Hirayama ,  Fumiyasu Oba ,  Yuichi Ikuhara

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2458 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2461

    摘要： The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.

    摘要翻译： 本发明涉及一种在底层上形成质量好的单晶薄膜的技术。 这种技术适用于提供可用于超导线材，超导装置等的氧化物高温超导体薄膜。 在基底上形成的单晶薄膜由与底层不同的物质制成。 在基底和薄膜中共同包含的特定原子层在基底和薄膜之间的界面处共享。 在与接口相邻的区域中，与界面相比，薄膜的单元电池为100个或更少，根据晶体取向为±2度以下的取向生长的结晶区域的比例 基质为50％以上。

    Method of joining together superconductors and a superconductor joined member produced by same
    8.
    发明授权
    Method of joining together superconductors and a superconductor joined member produced by same 失效
    将超导体和由其制造的超导体接合部件接合在一起的方法

    公开(公告)号：US06561412B2

    公开(公告)日：2003-05-13

    申请号：US09726263

    申请日：2000-11-30

    申请人： Jyunya Maeda ,  Susumu Seiki ,  Teruo Izumi ,  Yuh Shiohara

    发明人： Jyunya Maeda ,  Susumu Seiki ,  Teruo Izumi ,  Yuh Shiohara

    IPC分类号： B23K119

    CPC分类号： H01L39/02 ,  Y10S505/917 ,  Y10S505/918 ,  Y10S505/919 ,  Y10S505/92 ,  Y10S505/925 ,  Y10S505/926 ,  Y10S505/927 ,  Y10T29/49014

    摘要： Methods for implementing production of an oxide superconductor joined member, excellent in electric current transmission performance, without a need of going through particularly complex steps, are provided. When joining together oxide superconductors by use of a solder composed of an oxide superconducting material, a finally solidified portion of the solder is positioned in a region where a transmission path of electric current flowing between oxide superconductor base materials as joined together is not obstructed by, for example, disposing the solder on a face of the oxide superconductor base materials, other than butting surfaces of the oxide superconductor base materials, so as to straddle both the base materials like bridge-building. Current flow is also not obstructed by, for example, shaping junction faces of the oxide superconductor base materials such that at least portions of the butting surfaces thereof are in the shape of sloped open faces, parting from each other. Further, an oxide superconductor joined member is made by joining the base materials with each other through the intermediary of an oxide superconductor, serving as a binder, disposed on at least a face of the base materials, other than butting surfaces thereof.

    摘要翻译： 提供了实现电流传输性能优异的氧化物超导体接合部件的生产方法，而不需要经过特别复杂的步骤。 当通过使用由氧化物超导材料构成的焊料将氧化物超导体接合在一起时，焊料的最终固化部分位于在连接在氧化物超导体基材之间的电流的传输路径不被阻挡的区域中， 例如，将氧化物超导体基材的除了氧化物超导体基材的对接面以外的焊料配置在跨越基础材料如桥接建筑物的两面上。 电流也不会被例如氧化物超导体基材的结合面成形为阻碍，使得其对接表面的至少一部分彼此分开形成倾斜的开放面。 另外，氧化物超导体接合部件是通过除了其对接面之外，配置在基材的至少面上的，作为粘合剂的氧化物超导体的中间，将基材彼此接合而制成的。

    Methods for pulling a single crystal
    9.
    发明授权
    Methods for pulling a single crystal 有权
    拉单晶的方法

    公开(公告)号：US06210477B1

    公开(公告)日：2001-04-03

    申请号：US09217968

    申请日：1998-12-22

    申请人： Teruo Izumi ,  Hideki Watanabe

    发明人： Teruo Izumi ,  Hideki Watanabe

    IPC分类号： C30B1500

    CPC分类号： C30B15/14 ,  Y10S117/902 ,  Y10T117/1068

    摘要： The present invention relates to methods for pulling a single crystal wherein the induction of dislocation can be inhibited and a single crystal can be held safely. An apparatus for pulling a single crystal having a straightening vane in the shape of an inverted truncated cone whose upper and lower planes are removed, which is located between a crucible and a single crystal, is used. The gap between the lower end portion of the straightening vane and the surface of a melt filled into the crucible can be selected in the range of 30-200 mm. Where the gap is set large in the range of 30-200 mm, the temperature of the front portion of a seed crystal is raised till the difference in temperature between the front portion thereof and the melt (the range of 1380-1480° C.) becomes almost zero. The seed crystal is brought into contact with the melt, a neck is formed with being heated, and a main body is pulled from the melt. Alternatively, an apparatus for pulling a single crystal having a crucible with through holes formed on the upper part thereof, or an apparatus for pulling a single crystal having an auxiliary heating means which has a body surrounding a seed crystal located near above the melt surface and a transfer mechanism for pulling the body is used in order to achieve the object.

    摘要翻译： 本发明涉及拉伸单晶的方法，其中可以抑制位错的诱导并且可以安全地保持单晶。 使用具有位于坩埚和单晶之间的去除上平面和下平面的倒立锥体形状的矫直叶片的单晶的装置。 矫直叶片的下端部与填充到坩埚中的熔融物的表面之间的间隙可以选择在30-200mm的范围内。 在间隙设定为30〜200mm的范围内的情况下，晶种的前部的温度上升直到其前部和熔体之间的温度差（1380-1480℃的范围） ）变成几乎为零。 使晶种与熔体接触，在被加热的状态下形成颈部，并且从熔体中拉出主体。 或者，一种用于拉出具有形成在其上部的通孔的坩埚的单晶的装置，或用于拉动具有辅助加热装置的单晶的装置，该辅助加热装置具有围绕位于熔融表面附近的晶种的身体， 使用用于拉动身体的传送机构来实现该目的。

    Seed crystal holders, for pulling a single crystal
    10.
    发明授权
    Seed crystal holders, for pulling a single crystal 失效
    种晶晶座，用于拉单晶

    公开(公告)号：US6015461A

    公开(公告)日：2000-01-18

    申请号：US929118

    申请日：1997-09-15

    申请人： Teruo Izumi

    发明人： Teruo Izumi

    IPC分类号： C30B15/00 ,  C30B15/32 ,  C30B15/36 ,  C30B35/00

    CPC分类号： C30B29/06 ,  C30B15/32 ,  C30B15/36 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1072

    摘要： When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

    摘要翻译： 当拉伸的单晶变得更重时，由碳材料制成的晶种座的强度不足，导致单晶的下落。 另一方面，由金属制成的晶种支架由于热疲劳而导致重金属污染，或其强度早期劣化。 因此，使用包括直接保持晶种的金属制圆筒体和覆盖其周边的内筒体周围的碳筒体的晶种座。