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公开(公告)号:US07579231B2
公开(公告)日:2009-08-25
申请号:US10815932
申请日:2004-04-02
IPC分类号: H01L21/8238 , H01L21/4763 , H01L21/44 , H01L23/62
CPC分类号: H01L29/513 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/31683 , H01L21/823814 , H01L21/823828 , H01L21/823857 , H01L27/1087 , H01L28/40 , H01L29/4983 , H01L29/517 , H01L29/518 , H01L29/66181 , H01L29/66477 , H01L29/66545 , H01L29/66628 , H01L2924/0002 , Y10S257/915 , H01L2924/00
摘要: Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.
摘要翻译: 公开了一种制造半导体器件的方法,包括在半导体衬底上直接或间接形成金属化合物膜,通过氧化金属化合物膜形成由金属氧化物膜或金属硅酸盐膜构成的含金属的绝缘膜,以及 在含金属的绝缘膜上形成电极。
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公开(公告)号:US07538955B2
公开(公告)日:2009-05-26
申请号:US11904842
申请日:2007-09-28
申请人: Tomohiro Saito
发明人: Tomohiro Saito
IPC分类号: G02B3/02
CPC分类号: G02B9/12 , G02B13/0035
摘要: It is to provide an imaging lens that can maintain optical performance and actualize size and weight reduction.The imaging lens comprises, in order from an object side to an image surface side, a first lens that is a meniscus lens having a positive power whose convex surface faces the object side, a diaphragm, a second lens that is a meniscus lens having a positive power whose convex surface faces the image surface side, and a third lens that is a biconcave lens having a negative power, wherein a condition expressed by 0.11
摘要翻译: 它是提供能够保持光学性能并实现尺寸和重量减轻的成像透镜。 成像透镜从物体侧到像面侧依次包括作为凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜,隔膜,作为弯月形透镜的第二透镜,具有 凸面朝向图像表面侧的正功率和具有负功率的双凹透镜的第三透镜,其中由0.11
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公开(公告)号:US20080204899A1
公开(公告)日:2008-08-28
申请号:US12072316
申请日:2008-02-26
申请人: Tomohiro Saito
发明人: Tomohiro Saito
IPC分类号: G02B9/12
CPC分类号: G02B9/12 , G02B13/0035 , G02B13/18 , G02B13/22
摘要: It is to provide an imaging lens and an imaging device including the imaging lens that can maintain optical performance and achieve size and weight reduction.The imaging lens comprises, in order from an object side to an image surface side, a first lens 2 that is a meniscus lens having a positive power whose convex surface faces the object side, a diaphragm 3, a second lens 4 that is a meniscus lens having a positive power whose convex surface faces the image surface side, and a third lens 5 that is a biconcave lens having a negative power, wherein a condition expressed by 0.3≦f1/f2≦0.86 (where, f1: focal distance of the first lens and f2: focal distance of the second lens) are to be satisfied.
摘要翻译: 本发明提供一种成像透镜和成像装置,该成像装置包括可保持光学性能并实现尺寸和重量减轻的成像透镜。 成像透镜从物体侧到图像面侧依次包括作为其凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜2,膜片3,作为弯液面的第二透镜4 具有凸面朝向图像表面侧的正功率的透镜和具有负功率的双凹透镜的第三透镜5,其中由0.3 <= F 1 / f 2 SUB> <= 0.86(WHERE,F 1&lt; 1&gt;:第一透镜的焦距和f 2 SUB>:第二透镜的焦距) 。
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公开(公告)号:USD548585S1
公开(公告)日:2007-08-14
申请号:US29258140
申请日:2006-04-18
申请人: Kyosuke Okabe , Tomohiro Saito , Masakazu Mameta
设计人: Kyosuke Okabe , Tomohiro Saito , Masakazu Mameta
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公开(公告)号:US07242064B2
公开(公告)日:2007-07-10
申请号:US10810837
申请日:2004-03-29
IPC分类号: H01L29/76
CPC分类号: H01L29/785 , H01L29/42384 , H01L29/66545 , H01L29/66583 , H01L29/66795 , H01L29/7853 , H01L29/78609
摘要: In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor substrate, and electrical connection between the gate electrode of the MISFET and the well region in the semiconductor substrate is done on the side surface of the island-shaped element region.
摘要翻译: 在半导体器件中,形成在半导体衬底上的MISFET的栅极电连接到MISFET的沟道下方的阱区,MISFET形成在形成在半导体衬底上的岛状元件区域中,并且电气 MISFET的栅电极和半导体衬底中的阱区之间的连接在岛状元件区域的侧表面上进行。
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公开(公告)号:US20070148843A1
公开(公告)日:2007-06-28
申请号:US11635039
申请日:2006-12-07
申请人: Tomohiro Saito , Akio Kaneko , Atsushi Yagishita
发明人: Tomohiro Saito , Akio Kaneko , Atsushi Yagishita
IPC分类号: H01L21/8242 , H01L21/8234 , H01L21/336
CPC分类号: H01L29/66795 , H01L29/4908 , H01L29/785
摘要: This disclosure concerns a manufacturing method of a semiconductor device includes forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film; forming a gate insulation film on side surfaces of the Fin-type body; depositing a gate electrode material so as to cover the Fin-type body; planarizing the gate electrode material; forming a gate electrode by processing the gate electrode material; depositing an interlayer insulation film so as to cover the gate electrode; exposing the upper surface of the gate electrode; depositing a metal layer on the upper surface of the gate electrode; siliciding the gate electrode by reacting the gate electrode with the metal layer; forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and filling the trench with a conductor.
摘要翻译: 本公开涉及半导体器件的制造方法,包括在绝缘层上形成鳍状体,所述鳍状体由半导体材料制成,并且具有被保护膜覆盖的上表面; 在鳍型体的侧表面上形成栅极绝缘膜; 沉积栅电极材料以覆盖鳍型体; 平面化栅电极材料; 通过处理栅电极材料形成栅电极; 沉积层间绝缘膜以覆盖栅电极; 露出栅电极的上表面; 在栅电极的上表面上沉积金属层; 通过使栅电极与金属层反应来硅化栅电极; 通过去除金属层中的未反应金属在保护膜的上表面上形成沟槽; 并用导体填充沟槽。
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公开(公告)号:US20070127141A1
公开(公告)日:2007-06-07
申请号:US11604555
申请日:2006-11-27
申请人: Tomohiro Saito
发明人: Tomohiro Saito
IPC分类号: G02B9/06
CPC分类号: G02B13/003 , G02B9/06
摘要: An imaging lens including, in order from an object side towards an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens which is a lens having a positive power whose convex surface faces the image surface side, wherein conditions expressed by each of following expressions (1)-(6) are to be satisfied; 1.25≧L/fl≧0.8, 0.55≧f1/f2>0, 1.5≧f1/fl≧0.9, 1≧d2/d1≧0.2, 0.35≧d1/fl≧0.1, and 0.27≧d3/fl≧0.1 (where, L: entire length of the imaging lens, fl: focal distance of the entire imaging lens, f1: focal distance of the first lens, f2: focal distance of the second lens, d1: center thickness of the first lens, d2: space between the first lens and the second lens on the optical axis, and d3: center thickness of the second lens).
摘要翻译: 一种成像透镜,包括从物体侧朝向图像表面侧的顺序,隔膜,具有凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜,以及具有 凸面朝向图像面侧的正电力,其中满足以下表达式(1) - (6)表示的条件; 1/2> = 1 / f 1 = 0.8,0.55> = f 1/2 2 SUB >> 0,1.5> = f 1 / = 0.9,1> = d 2 2 / d 1 / / SUB >> = 0.2,0.35> = d 1 / f 1 = 0.1和0.27> = d 3 / f 1 = 0.1(其中,L:成像透镜的整个长度,f1:整个成像透镜的焦距,f 1 <1:焦距 第一透镜,第二透镜,第二透镜的焦距,d <1/2>第一透镜的中心厚度,d 2 <2: 光轴上的第一透镜和第二透镜,以及第二透镜的中心厚度d 3 3)。
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公开(公告)号:US20060087749A1
公开(公告)日:2006-04-27
申请号:US11250999
申请日:2005-10-14
申请人: Tomohiro Saito
发明人: Tomohiro Saito
IPC分类号: G02B9/06
CPC分类号: G02B13/003 , G02B9/06
摘要: Provided is an imaging lens system which can sufficiently meet the demands for further reduction of size and weight and for further improvement of the optical performance, and is also capable of improving the productivity. The imaging lens system comprises, from the object side, a diaphragm, a first lens as a positive meniscus lens whose convex surface facing the object side, and a second lens as a positive lens whose convex surface facing the image surface side, wherein following expressions are to be satisfied 1.25≧L/fl≧0.8, 0.55≧f1/f2≧0.2, 1.8≧f1/fl≧1, 4≧f2/fl≧1.5, 1≧d2/d1≧0.5, 0.27≧d1/fl≧0.1, 0.27≧d3/fl≧0.1 (where, L: entire length of the lens system, fl: focal distance of entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, d1: center thickness of the first lens, d2: distance between the first lens and second lens on the optical axis, d3: center thickness of the second lens).
摘要翻译: 本发明提供一种可以充分满足进一步减小尺寸和重量的要求并且进一步提高光学性能的成像透镜系统,并且还能够提高生产率。 成像透镜系统包括:物体侧的隔膜,作为面向物体侧的凸面的正弯月形透镜的第一透镜以及与图像面侧相对的凸面的正透镜的第二透镜,其中, 要满足1.25> = L / fl> = 0.8,0.55> = f 1 / f 2 SUB> = 0.2,1.8> = f 1 / 1/4> = 1/2> = 1,1> = d 2 / / 1 SUB> = 0.5,0.27> = d 1 / f 1 = 0.1,0.27 = d 3 / f 1 = 0.1(其中,L:透镜系统的整个长度,fl :整个透镜系统的焦距,f 1 SUB>:第一透镜的焦距,f 2 2:第二透镜的焦距,d <1 SUB >:第一透镜的中心厚度,d <2>:第一透镜和第二透镜在光轴上的距离,d 3 <3:第二透镜的中心厚度)。
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公开(公告)号:US20060038215A1
公开(公告)日:2006-02-23
申请号:US11256929
申请日:2005-10-25
IPC分类号: H01L29/94
CPC分类号: H01L28/55 , H01L21/76807 , H01L27/10852 , H01L28/40 , H01L28/75
摘要: A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.
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公开(公告)号:US06995928B2
公开(公告)日:2006-02-07
申请号:US10447174
申请日:2003-05-28
申请人: Tomohiro Saito
发明人: Tomohiro Saito
IPC分类号: G02B13/18
CPC分类号: G02B13/006 , G02B3/04 , G02B9/02 , G02B13/0025
摘要: In a wide-angle optical system for a solid image pickup element, an image pickup lens 2 is a biconvex lens, and its surface closer to an image surface is being formed into such an aspherical shape that the positive refractive power is weaker at a location more spaced in a diametrical direction apart from an optical axis. Further, the image pickup lens 2 satisfies the following condition expression (1): 1.3≧|r1/r2|≧0.8 (1) wherein r1 is a radius of curvature of a surface of the image pickup lens closer to an object, and r2 is a radius of curvature of the surface of the image pickup lens closer to the image surface. Thus, the distortion can be corrected appropriately.
摘要翻译: 在用于实心图像拾取元件的广角光学系统中,图像拾取透镜2是双凸透镜,并且其更靠近图像表面的表面被形成为这样的非球面形状,使得正折射能力在一个位置处较弱 在离开光轴的直径方向上更间隔开。 此外,图像拾取透镜2满足以下条件表达式
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