Data scrambling schemes for memory devices
    11.
    发明授权
    Data scrambling schemes for memory devices 有权
    存储器件的数据加扰方案

    公开(公告)号:US08261159B1

    公开(公告)日:2012-09-04

    申请号:US12607085

    申请日:2009-10-28

    CPC classification number: G06F11/1048

    Abstract: A method for data storage includes defining a set of scrambling sequences, each sequence including bits in respective bit positions having bit values, such that a distribution of the bit values in any give bit position satisfies a predefined statistical criterion. Each data word is scrambled using a respective scrambling sequence selected from the set. The scrambled data words are stored in the memory device.

    Abstract translation: 一种用于数据存储的方法包括定义一组加扰序列,每个序列包括具有比特值的相应比特位置中的比特,使得任何给定比特位置中的比特值的分布满足预定义的统计标准。 使用从集合中选择的相应加扰序列对每个数据字进行加扰。 加扰的数据字被存储在存储器件中。

    Selective re-programming of analog memory cells
    12.
    发明授权
    Selective re-programming of analog memory cells 有权
    模拟存储单元的选择性重新编程

    公开(公告)号:US08238157B1

    公开(公告)日:2012-08-07

    申请号:US12758003

    申请日:2010-04-11

    CPC classification number: G11C16/10 G11C11/5628 G11C16/3459 G11C29/78

    Abstract: A method for data storage includes defining, in a memory that includes multiple analog memory cells, an erased state, a set of non-erased programming states and a partial subset of the non-erased programming states. Data is initially stored in a first group of the analog memory cells by programming each of at least some of the memory cells in the first group from the erased state to a respective non-erased programming state selected from the set of non-erased programming states. After initially storing the data, a second group of the analog memory cells, which potentially cause interference to the first group, is programmed. After programming the second group, the first group is selectively re-programmed with the data by repeating programming of only the memory cells in the first group whose respective programming states belong to the partial subset.

    Abstract translation: 一种用于数据存储的方法包括在包括多个模拟存储器单元的存储器中定义擦除状态,一组未擦除的编程状态和未擦除编程状态的部分子集。 最初将数据存储在第一组模拟存储器单元中,通过将第一组中的至少一些存储单元中的每一个从擦除状态编程为从非擦除编程状态集合中选择的各自的非擦除编程状态 。 在最初存储数据之后,编程可能对第一组产生干扰的第二组模拟存储器单元。 在对第二组进行编程之后,通过重复仅对其各自编程状态属于部分子集的第一组中的存储器单元进行编程,对该第一组进行有选择地重新编程。

    Efficient interference cancellation in analog memory cell arrays
    13.
    发明授权
    Efficient interference cancellation in analog memory cell arrays 有权
    模拟存储单元阵列中的高效干扰消除

    公开(公告)号:US08209588B2

    公开(公告)日:2012-06-26

    申请号:US12332368

    申请日:2008-12-11

    Abstract: A method includes storing data in a group of analog memory cells by writing first storage values to the cells. After storing the data, second storage values are read from the cells using one or more first read thresholds. Third storage values that potentially cause cross-coupling interference in the second storage values are identified, and the third storage values are processed, to identify a subset of the second storage values as severely-interfered values. Fourth storage values are selectively re-read from the cells holding the severely-interfered values using one or more second read thresholds, different from the first read thresholds. The cross-coupling interference in the severely-interfered storage values is canceled using the re-read fourth storage values. The second storage values, including the severely-interfered values in which the cross-coupling interference has been canceled, are processed so as to reconstruct the data stored in the cell group.

    Abstract translation: 一种方法包括通过将第一存储值写入单元来将数据存储在一组模拟存储单元中。 在存储数据之后,使用一个或多个第一读取阈值从单元读取第二存储值。 识别潜在地在第二存储值中引起交叉耦合干扰的第三存储值,并且处理第三存储值,以将第二存储值的子集识别为严重干扰的值。 使用与第一读取阈值不同的一个或多个第二读取阈值,从保持严重干扰值的单元有选择地重新读取第四存储值。 使用重新读取的第四存储值来消除严重干扰的存储值中的交叉耦合干扰。 处理包括交叉耦合干扰已被消除的严重干扰值的第二存储值,以便重构存储在小区组中的数据。

    Memory device with multiple-accuracy read commands
    14.
    发明授权
    Memory device with multiple-accuracy read commands 有权
    具有多重精度读取命令的存储器件

    公开(公告)号:US08059457B2

    公开(公告)日:2011-11-15

    申请号:US12405275

    申请日:2009-03-17

    Abstract: A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command.

    Abstract translation: 一种用于数据存储的方法包括至少定义用于从模拟存储器单元读取存储值的第一和第二读取命令。 第一读取命令以第一精度读取存储值,并且第二读取命令以比第一精度更精细的第二精度读取存储值。 针对要在特定组的存储单元上执行的读取操作来评估条件。 响应于评估条件选择第一和第二读取命令中的一个。 使用所选择的读取命令从存储器单元的给定组中读取存储值。

    Selective Activation of Programming Schemes in Analog Memory Cell Arrays
    15.
    发明申请
    Selective Activation of Programming Schemes in Analog Memory Cell Arrays 有权
    模拟存储器单元阵列中编程方案的选择性激活

    公开(公告)号:US20100220509A1

    公开(公告)日:2010-09-02

    申请号:US12714501

    申请日:2010-02-28

    CPC classification number: G11C27/005 G11C7/02 G11C11/5628 G11C16/3418

    Abstract: A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme.

    Abstract translation: 一种用于数据存储的方法包括:定义第一编程方案,其编程一组模拟存储器单元,同时减少由与该组相邻的至少一个存储器单元引起的干扰;以及第二编程方案,其对该组模拟存储器单元进行编程 不能减少第一编程方案减少的所有干扰。 基于针对模拟存储器单元定义的标准来选择第一和第二编程方案之一。 使用所选择的编程方案将数据存储在模拟存储器单元的组中。

    STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N
    16.
    发明申请
    STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N 有权
    存储在N位/细胞模拟记忆体细胞中的位置/细胞密度M> N

    公开(公告)号:US20100124088A1

    公开(公告)日:2010-05-20

    申请号:US12618732

    申请日:2009-11-15

    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    Abstract translation: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据,并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    Preamble detection using frequency based correlation
    17.
    发明授权
    Preamble detection using frequency based correlation 失效
    使用基于频率的相关性的前导码检测

    公开(公告)号:US07606139B2

    公开(公告)日:2009-10-20

    申请号:US11635886

    申请日:2006-12-08

    Abstract: A method for detecting a preamble location in a multiple preamble OFDM (Orthogonal Frequency Division Multiplexing) system is disclosed. An OFDM signal is generated with a plurality of frames, and each of the frames includes symbols and a predetermined preamble symbol. A maximum FDDC (Frequency Domain Differential Correlator) value is computed for each of the symbols in some of the frames. The preamble location in a frame is determined by summing the maximum FDDC value for each symbol at a same frame location in consecutive frames of the OFDM signal.

    Abstract translation: 公开了一种用于检测多前同步码OFDM(正交频分复用)系统中的前导码位置的方法。 利用多个帧生成OFDM信号,并且每个帧包括符号和预定的前导码符号。 对于一些帧中的每个符号计算最大FDDC(频域差分相关器)值。 通过在OFDM信号的连续帧中的相同帧位置处对每个符号的最大FDDC值求和来确定帧中的前导码位置。

    EFFICIENT READOUT FROM ANALOG MEMORY CELLS USING DATA COMPRESSION
    18.
    发明申请
    EFFICIENT READOUT FROM ANALOG MEMORY CELLS USING DATA COMPRESSION 有权
    使用数据压缩对模拟记忆体进行高效的读取

    公开(公告)号:US20090228761A1

    公开(公告)日:2009-09-10

    申请号:US12397368

    申请日:2009-03-04

    Abstract: A method for data storage includes storing data in a group of analog memory cells by writing respective input storage values to the memory cells in the group. After storing the data, respective output storage values are read from the analog memory cells in the group. Respective confidence levels of the output storage values are estimated, and the confidence levels are compressed. The output storage values and the compressed confidence levels are transferred from the memory cells over an interface to a memory controller.

    Abstract translation: 一种用于数据存储的方法包括通过将相应的输入存储值写入组中的存储器单元来将数据存储在一组模拟存储器单元中。 在存储数据之后,从组中的模拟存储器单元读取相应的输出存储值。 估计输出存储值的相对置信水平,并且压缩置信水平。 输出存储值和压缩置信水平通过接口从存储器单元传送到存储器控制器。

    PROGRAMMING ANALOG MEMORY CELLS FOR REDUCED VARIANCE AFTER RETENTION
    19.
    发明申请
    PROGRAMMING ANALOG MEMORY CELLS FOR REDUCED VARIANCE AFTER RETENTION 有权
    编程模拟记忆细胞,用于在保留后减少变化

    公开(公告)号:US20090213654A1

    公开(公告)日:2009-08-27

    申请号:US12390522

    申请日:2009-02-23

    CPC classification number: G11C11/5628 G11C27/005 G11C2211/5621

    Abstract: A method includes defining a nominal level of a physical quantity to be stored in analog memory cells for representing a given data value. The given data value is written to the cells in first and second groups of the cells, which have respective first and second programming responsiveness such that the second responsiveness is different from the first responsiveness, by applying to the cells in the first and second groups respective, different first and second patterns of programming pulses that are selected so as to cause the cells in the first and second groups to store respective levels of the physical quantity that fall respectively in first and second ranges, such that the first range is higher than and the second range is lower than the nominal level. The given data value is read from the cells at a later time.

    Abstract translation: 一种方法包括定义要存储在模拟存储器单元中以表示给定数据值的物理量的标称电平。 将给定数据值写入第一和第二组单元中的单元,其具有相应的第一和第二编程响应性,使得第二响应性与第一响应性不同,通过向第一组和第二组中的单元施加相应的 选择的不同的第一和第二编程脉冲模式,以使得第一和第二组中的单元分别存储分别落在第一和第二范围内的物理量的相应水平,使得第一范围高于和/ 第二范围低于标称水平。 稍后从单元读取给定的数据值。

    PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION
    20.
    发明申请
    PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION 有权
    使用单个编程脉冲每个状态转换模拟记忆细胞的编程

    公开(公告)号:US20090213653A1

    公开(公告)日:2009-08-27

    申请号:US12388528

    申请日:2009-02-19

    CPC classification number: G11C11/5628 G11C27/005 G11C29/00

    Abstract: A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

    Abstract translation: 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合,并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中,编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变,使得给定的转换仅由单个编程脉冲引起。

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