摘要:
Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.
摘要:
A parity checking circuit is designed for continuous parity checking of content-addressable memory cells, and is configured such that during a parity check the number of parity checking steps per data word is the same as the number of bits in the original payload data word to be stored, with the parity checking circuit being formed from four transistors of the same conductance type. The parity checking circuit has a detector, which automatically detects the change in an information state of a memory cell. The detector is in the form of an automatic state device and has a number of catch latches.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
A logic circuit for calculating an encrypted dual-rail result operand from encrypted dual-rail input operands according to a combination rule includes inputs for receiving the input operands and an output for outputting the encrypted result operand. Each operand may comprise a first logic state or a second logic state. The logic circuit comprises a first logic stage connected between the inputs and an intermediate node and a second logic stage connected between the intermediate node and the output. The logic stages are formed to calculate the first or second logic state of the encrypted result operand from the input operands according to the combination rule and to maintain or change exactly once the logic state of the encrypted result operand, independently of an order of arrival of the encrypted input operands, depending on the combination rule, in order to impress the calculated first logic state or second logic state on the output.
摘要:
A parity checking circuit is designed for continuous parity checking of content-addressable memory cells, and is configured such that during a parity check the number of parity checking steps per data word is the same as the number of bits in the original payload data word to be stored, with the parity checking circuit being formed from four transistors of the same conductance type. The parity checking circuit has a detector, which automatically detects the change in an information state of a memory cell. The detector is in the form of an automatic state device and has a number of catch latches.
摘要:
A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.
摘要:
Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.
摘要:
Circuit for calculating a logic combination of two encrypted input operands receivese first and second dual-rail signals comprising data values in a calculation cycle and precharge values in a precharge cycle, and receives a dual-rail encryption signal comprising encryption values in the calculation cycle and precharge values in the precharge cycle, and outputs a dual-rail result signal comprising encrypted result values in the calculation cycle and precharge values in the precharge cycle. The data and encrypted result values are encrypted with the encryption values of the dual-rail encryption signal according to an encryption rule. A logic circuit determines the encrypted result values according to the logic combination from the data and encryption values, and outputs the encrypted result values in the calculation cycle. A precharge circuit impresses precharge values when precharge values are sensed at a single input, or impresses the precharge values only when the first and second dual-rail signals comprise data values and the dual-rail encryption signal comprises encryption values.
摘要:
The invention relates to an adder for adding at least four bits of the same significance w, said adder having a first number of inputs for receiving the bits of the same significance w that are to be added and a number of outputs, the bits to be added being applied to the inputs in presorted form, and the adder adding the bits while taking account of the presorting. The invention also provides an adding device for adding at least four bits of equal significance and a corresponding method.