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公开(公告)号：US20110175960A1
公开(公告)日：2011-07-21
申请号：US13121272
申请日：2010-03-02
申请人： Yoshiyuki Fukumoto
发明人： Yoshiyuki Fukumoto
IPC分类号： B41J29/38
CPC分类号： B41J2/03 , A61M11/00 , A61M11/006 , A61M11/007 , A61M11/02 , A61M11/041 , A61M11/042 , A61M15/025 , A61M2205/103 , A61M2205/3331 , A61M2205/8206
摘要： A liquid ejection apparatus comprising a liquid chamber for accommodating a liquid to be supplied from a liquid tank, an ejection port for ejecting droplets of the liquid by applying a pressure to the liquid in the liquid chamber, a pressure application unit for applying the pressure to the liquid in the liquid chamber a liquid-holding structure for holding the liquid on the atmosphere side of the ejection port so as to cover the ejection port with the liquid; and a liquid-removing unit for removing the liquid held on the atmosphere side of the ejection port. The liquid-removing unit controls a timing of ejecting the droplets from the ejection port.
摘要翻译： 一种液体喷射装置，包括用于容纳从液罐供应的液体的液体室，通过对液体室中的液体施加压力来喷射液滴的喷射口;压力施加单元，用于将压力施加到 在液体室中的液体是用于将液体保持在喷射口的气氛侧的液体保持结构，以便用液体覆盖喷射口; 以及用于去除保持在喷射口的气氛侧的液体的液体去除单元。 液体移除单元控制从喷射口喷射液滴的定时。
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公开(公告)号：US20080164502A1
公开(公告)日：2008-07-10
申请号：US11667834
申请日：2005-11-16
IPC分类号： H01L27/00
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
摘要翻译： 本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。 根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。
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13.发明申请公开(公告)号：US20060038213A1
公开(公告)日：2006-02-23
申请号：US11208370
申请日：2005-08-19
IPC分类号： H01L29/94
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要翻译： 磁存储器包括：包括自由磁性层的磁阻元件; 第一互连件，其在第一方向上倾斜于所述自由磁性层的容易轴线延伸; 沿与第一方向大致正交的第二方向延伸的第二互连; 以及写入电路，通过在所述第一互连上形成第一写入电流将数据写入所述自由磁性层，然后在所述第二互连上开启第二写入电流，所述第一写入电流导通。 自由磁性层包括：第一至第N铁磁层和N等于或大于4的第一至第（N-1）个非磁性层，第i个非磁性层设置在i 和第（i + 1）个铁磁层，其中i为等于或小于N-1的任意自然数。 自由磁性层被设计成使得第j和第（j + 1）个铁磁层之间的反铁磁耦合比第一和第二铁磁层之间的反铁磁耦合更强，j是从2到N的整数中的任何一个 -2。
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14.发明授权Magnetic resistance element having four magnetization states and a magnetic device using the same 有权具有四个磁化状态的磁阻元件和使用其的磁性装置公开(公告)号：US06535364B1
公开(公告)日：2003-03-18
申请号：US09482914
申请日：2000-01-14
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/5607 , G11C2211/5615 , H01F10/3254 , H01F10/3268
摘要： A magnetic resistance element is provided that includes an upper magnetic layer, which is formed in contact with an anti-ferromagnetic layer, and at least two magnetic layers that are layered with tunnel barrier wall layers respectively inserted between the first magnetic layer and each of the at least two magnetic layers such that the magnetic resistance element has a combined resistance that corresponds to one of four predefined magnetic resistances and that can be changed to another of the four predefined magnetic resistances by applying a predefined recording magnetic field pattern to the magnetic resistance element.
摘要翻译： 提供了一种磁阻元件，其包括形成为与反铁磁层接触的上磁性层，以及分别插入在第一磁性层和第一磁性层之间的隧道阻挡壁层的至少两个磁性层 至少两个磁性层，使得磁阻元件具有对应于四个预定义的磁阻之一的组合电阻，并且可以通过将预定义的记录磁场图案施加到磁阻元件上而改变为四个预定义的磁阻中的另一个 。
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公开(公告)号：US08782895B2
公开(公告)日：2014-07-22
申请号：US13293446
申请日：2011-11-10
申请人： Yoshiyuki Fukumoto
发明人： Yoshiyuki Fukumoto
CPC分类号： B41J2/1603 , B41J2/1623 , B41J2/1625 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , Y10T29/49083 , Y10T29/49126 , Y10T29/49128 , Y10T29/49401
摘要： In a method for manufacturing a droplet ejection head, a structure of a substrate having an energy-generating element that imparts energy to a liquid to eject a liquid droplet from an ejection orifice and an orifice plate having the ejection orifice formed therein are laminated through a flow channel member for forming a pattern of a liquid flow channel that is a region in which the liquid flows. At least one of a plate before being laminated and the flow channel member before being laminated has a void of at least one of a through-hole other than the ejection orifice and a recess in the face to be laminated.
摘要翻译： 在制造液滴喷射头的方法中，具有赋予液体以从喷射孔喷射液滴的能量产生元件的基板和其上形成有喷射口的孔板的基板的结构通过 用于形成作为液体流动的区域的液体流动通道的图案的流动通道构件。 在层压之前的板中的至少一个和层压之前的流动通道构件具有除了喷射孔之外的通孔和待层压的面中的凹部中的至少一个的空隙。
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公开(公告)号：US20120120155A1
公开(公告)日：2012-05-17
申请号：US13293446
申请日：2011-11-10
申请人： Yoshiyuki Fukumoto
发明人： Yoshiyuki Fukumoto
CPC分类号： B41J2/1603 , B41J2/1623 , B41J2/1625 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , Y10T29/49083 , Y10T29/49126 , Y10T29/49128 , Y10T29/49401
摘要： Provided are a method for manufacturing a droplet ejection head having a structure in which a substrate having an energy-generating element that imparts energy to a liquid to eject a liquid droplet from an ejection orifice and an orifice plate having the ejection orifice formed therein are laminated through a flow channel member for forming a pattern of a liquid flow channel that is a region in which the liquid flows, wherein at least one of a plate before being laminated and the flow channel member before being laminated has a void of at least one of a through-hole other than the ejection orifice and a recess in the face to be laminated; and the droplet ejection head.
摘要翻译： 提供一种制造液滴喷射头的方法，该液滴喷射头具有这样一种结构，其中具有能量产生元件的能量产生元件的液体从喷射孔喷出液滴并且具有形成有喷射口的孔板被层压 通过用于形成作为液体流动的区域的液体流路的图案的流路构件，其中在层压之前的板中的至少一个和层流之间的流动通道构件之间的空隙至少是 除喷嘴之外的通孔和待层压的面中的凹部; 和液滴喷射头。
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公开(公告)号：US07582923B2
公开(公告)日：2009-09-01
申请号：US11667834
申请日：2005-11-16
IPC分类号： H01L27/115
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： The present invention to provide a new technique to reduce a variation in switching field of a magnetization free layer in a magnetic memory. The magnetic memory according to the present invention includes a magnetization free layer including a ferromagnetic layer having a shape magnetic anisotropy in a first direction and a magnetic strain constant is positive; and a stress inducing structure configured to apply a tensile stress to said magnetization free layer in a same direction as the first direction.
摘要翻译： 本发明提供一种减小磁存储器中的无磁化层的开关场变化的新技术。 根据本发明的磁存储器包括具有在第一方向上具有形状磁各向异性的铁磁层和磁应变常数为正的铁磁层的无磁化层; 以及构造成在与第一方向相同的方向上对所述无磁化层施加拉伸应力的应力诱导结构。
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18.发明申请公开(公告)号：US20080278867A1
公开(公告)日：2008-11-13
申请号：US12138158
申请日：2008-06-12
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/06 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/08
摘要： A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element, and a diffusion barrier structure disposed between said conductor and said magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between said free and fixed ferroelectric layer.
摘要翻译： 提供了一种用于通过防止用于将磁阻元件连接到另一元件和构成磁阻元件的层的导体（例如通孔和互连）之间的相互扩散来改善磁阻元件的热稳定性的磁阻器件。 磁阻器件由磁阻元件，提供所述磁阻元件与另一元件之间的电连接的非磁性导体以及设置在所述导体与所述磁阻元件之间的扩散阻挡结构构成，所述磁阻元件包括具有可逆的 自发磁化，具有固定的自发磁化的固定铁磁层，以及设置在所述自由和固定的铁电层之间的隧道介电层。
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19.发明授权公开(公告)号：US07379280B2
公开(公告)日：2008-05-27
申请号：US10539373
申请日：2003-12-16
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G01R33/098 , H01F10/3254 , H01F10/3295 , H01L43/08
摘要： A magneto-resistance device is composed of an anti-ferromagnetic layer (5), a pinned ferromagnetic layer (20), a tunnel insulating layer (9) and a free ferromagnetic layer (21). The pinned ferromagnetic layer (20) is connected to the anti-ferromagnetic layer (5) and has a fixed spontaneous magnetization. The tunnel insulating layer (9) is connected to the pinned ferromagnetic layer (20) and is non-magnetic. The free ferromagnetic layer (21) is connected to the tunnel insulating layer (9) and has a reversible free spontaneous magnetization. The pinned ferromagnetic layer (20) has a first composite magnetic layer (6) to prevent at lest one component of the anti-ferromagnetic layer (5) from diffusing into tunnel insulating layer (9).
摘要翻译： 磁阻装置由反铁磁层（5），钉扎铁磁层（20），隧道绝缘层（9）和自由铁磁层（21）构成。 被钉扎的铁磁层（20）连接到反铁磁层（5）并具有固定的自发磁化。 隧道绝缘层（9）连接到被钉扎铁磁层（20）并且是非磁性的。 自由铁磁层（21）连接到隧道绝缘层（9）并且具有可逆的自由磁化。 钉扎铁磁层（20）具有第一复合磁性层（6），以防止反铁磁性层（5）的至少一个部件扩散到隧道绝缘层（9）中。
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公开(公告)号：US20060262594A1
公开(公告)日：2006-11-23
申请号：US11436095
申请日：2006-05-18
申请人： Yoshiyuki Fukumoto
发明人： Yoshiyuki Fukumoto
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272
摘要： A magnetic film stack is composed of a synthetic antiferromagnet including a plurality of ferromagnetic layers, adjacent two of which are antiferromagnetically coupled through a non-magnetic layer; and a reversal inducing layer exhibiting ferromagnetism. The reversal inducing layer is ferromagnetically coupled to the synthetic antiferromagnet, and designed to have a coercive field smaller than a magnetic field at which antiferromagnetic coupling within the synthetic antiferromagnet starts to be decoupled.
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