摘要:
A magnetic resistance element is provided that includes an upper magnetic layer, which is formed in contact with an anti-ferromagnetic layer, and at least two magnetic layers that are layered with tunnel barrier wall layers respectively inserted between the first magnetic layer and each of the at least two magnetic layers such that the magnetic resistance element has a combined resistance that corresponds to one of four predefined magnetic resistances and that can be changed to another of the four predefined magnetic resistances by applying a predefined recording magnetic field pattern to the magnetic resistance element.
摘要:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要:
A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnxAlyGez (10 atm %≦x≦44 atm %, 10 atm %≦y≦65 atm %, 10 atm %≦z≦80 atm %, x+y+z=100 atm %).
摘要翻译:根据实施例的磁阻元件包括第一磁性层,第二磁性层和设置在第一磁性层和第二磁性层之间的第一非磁性层,第一磁性层和第二磁性层中的至少一个包括 MnxAlyGez的磁性膜(10atm%@ x @ 44atm%,10atm%@y @ 65 atm%,10atm%@ z @ 80atm%,x + y + z = 100atm%)。
摘要:
By forcibly grounding a selected one of three phases of a three-phase power distribution line, a higher line-to-ground voltage is applied to other phases thereby causing very small-scale grounding at a fault position so that the fault position can be specified by detecting the small-scale grounding current as generated.
摘要:
A film type magnetic recording medium comprising as a magnetic recording layer an iron-cobalt-nickel-chromium magnetic alloy containing 10-51 wt. % cobalt, 1-30 wt. % nickel, 1-10 wt. % of chromium and 6 wt. % or less of at least one of the elements molybdenum, tungsten, vanadium, niobium, tantalum, copper, titanium and zirconium, high in durability and magnetic property, and moreover, capable of easily forming a magnetic alloy film thereon by vacuum deposition.
摘要:
A remote monitor control system comprises a single master station having the function of communication in synchronism with communication clocks for generating various commands required for monitor and control, and a plurality of terminal stations having the function of communication in synchronism with the communication clocks for receiving data related to objects of monitor and controlling objects of control. The terminal stations are caused to respond at different time points sequentially predetermined different times after transmission from the master station. When a sync signal fails to be received for a predetermined length of time, the predetermined time set for a particular station is shortened.
摘要:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译:根据实施例的磁阻元件包括:基底层; 第一磁性层,其形成在所述基底层上,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜,所述第一磁性膜包括Mn x Ga 100-x(45≤n1E; x <64原子%); 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜,所述第二磁性膜包括MnyGa100-y(45&lt; IL1; y <64原子%), 。 第一和第二磁性层包括彼此不同的Mn组成比,第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。
摘要:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
摘要:
A power stoppage minimizing system for a distribution line and a method of using a distribution line minimize a power stoppage section and a power stoppage time when a short circuit occurs in the distribution line, and employs a first and a second distribution line each connected through a circuit breaker to a corresponding bus and each having switches in position thereon; a normally open tie point switchgear provided between adjacent ends of the first and second distribution lines; a protective relay for opening, when a short circuit has occurred, the circuit breaker a fixed time after the occurrence of the short circuit on the first distribution line; a first unit for opening a switch on the side of a power source and nearest a point where the short circuit has occurred; a second unit for opening, after the switch is opened by the first unit, a switch on the side of a load nearest the switch opened by the first unit; and a third unit for closing the tie point switchgear after the opening of the switch by the second unit, the opening of the switch by the first unit being made within a fixed interval of time for the protective relay. Thus, the short circuit section is located and the switches before and after the short circuit section are opened. The tie point switchgear is then closed to thereby minimize the power stoppage section and time when the short circuit has occurred.
摘要:
A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译:根据实施例的磁阻元件包括:基底层; 第一磁性层,其形成在所述基底层上,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜,所述第一磁性膜包括Mn x Ga 100-x(45≤n1E; x <64原子%); 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层,并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜,所述第二磁性膜包括MnyGa100-y(45&lt; IL1; y <64原子%), 。 第一和第二磁性层包括彼此不同的Mn组成比,第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。