Abstract:
A method of making hard boron nitride by a plasma CVD method employing beam irradiation comprising the steps of: introducing a boron source gas and a nitrogen source gas into a plasma generated by employing a working gas selected from the group consisted of helium, hydrogen and a mixture of these under pressure of 0.01 through 100 torr, said boron source gas and said nitrogen source gas are provided with volumetric percent of 0.01 through 10% with respect to the working gas; transmitting activating innoculations formed in the plasma to a substrate of which temperature is maintained at 300.degree. through 1100.degree. C; converting the activating innoculations into precursor activating innoculations necessary for forming and growing a hard boron nitride film on the substrate by irradiating an ultraviolet beam to the activation innoculations on the substrate; and accumulating the hard boron nitride on the substrate.
Abstract:
A method for preparing diamond or diamond-like carbon, which comprises exciting carbon by decomposing, evaporating and dissociating an organic compound or a carbon material in a combustion flame of at least 600.degree. C. of a hydrocarbon, hydrogen or a mixture thereof and oxygen gas or air, mixing thereto hydrogen in an amount of at least one time by volume the amount of carbon, and maintaining the mixture at a temperature of from 600.degree. to 1,700.degree. C. to precipitate diamond or diamond-like carbon.
Abstract:
A method for synthesizing diamond, which comprises:(a) generating a plasma by electric discharge in a gas selected from the group consisting of a hydrocarbon gas, hydrogen gas, an inert gas and a mixture thereof,(b) decomposing a carbon source by the plasma to form plasma gas containing carbon ions or carbon radicals,(c) effecting adiabatic expansion of the plasma gas to precipitate diamond.
Abstract:
An adsorbent for radioelement-containing waste composed of the following spherical layered double hydroxide (A) or spherical metal hydroxide (B) is provided. (A) is a nonstoichiometric compound represented by general formula (a) or (b): [M2+1-xM3+x(OH)2]x+[An−x/n·mH2O]x− . . . (a), [Al2Li(OH)6]x+[An−x/n·mH2O]x− . . . (b) wherein 0.1≦x≦0.4, 0
Abstract:
An adsorbent for radioelement-containing waste includes spherical layered double hydroxide (A) or spherical metal hydroxide (B). (A) is a nonstoichiometric compound represented by general formula (a) or (b): [M2+1-xM3+x(OH)2]x+[An−x/n.mH2O]x− (a), [Al2Li(OH)6]x+[An−x/n.mH2O]x− (b) where 0.1≦x≦0.4, 0
Abstract:
The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.