Method of making hard boron nitride by a plasma CVD method employing
beam irradiation
    11.
    发明授权
    Method of making hard boron nitride by a plasma CVD method employing beam irradiation 失效
    通过使用束照射的等离子体CVD法制造硬质氮化硼的方法

    公开(公告)号:US5286533A

    公开(公告)日:1994-02-15

    申请号:US82457

    申请日:1993-06-25

    CPC classification number: C23C16/483 C23C16/342

    Abstract: A method of making hard boron nitride by a plasma CVD method employing beam irradiation comprising the steps of: introducing a boron source gas and a nitrogen source gas into a plasma generated by employing a working gas selected from the group consisted of helium, hydrogen and a mixture of these under pressure of 0.01 through 100 torr, said boron source gas and said nitrogen source gas are provided with volumetric percent of 0.01 through 10% with respect to the working gas; transmitting activating innoculations formed in the plasma to a substrate of which temperature is maintained at 300.degree. through 1100.degree. C; converting the activating innoculations into precursor activating innoculations necessary for forming and growing a hard boron nitride film on the substrate by irradiating an ultraviolet beam to the activation innoculations on the substrate; and accumulating the hard boron nitride on the substrate.

    Abstract translation: 一种通过使用光束照射的等离子体CVD法制造硬质氮化硼的方法,包括以下步骤:将硼源气体和氮源气体引入通过使用选自氦气,氢气和 这些在0.01至100托的压力下的混合物,所述硼源气体和所述氮源气体相对于工作气体的体积百分比为0.01至10%; 将在等离子体中形成的激活接收层传输到温度保持在300度至1100℃的衬底; 通过将紫外线照射到基板上的活化接触上,将激活的接合体转化为在衬底上形成和生长硬质氮化硼膜所需的前体活化原子; 并在基板上堆积硬质氮化硼。

    Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same
    16.
    发明申请
    Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same 失效
    Sp3键氮化硼在紫外线区域发射光,其制备方法和使用其的功能材料

    公开(公告)号:US20060163527A1

    公开(公告)日:2006-07-27

    申请号:US10518644

    申请日:2003-07-01

    Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

    Abstract translation: 本发明提供由通式BN代表的具有六方晶5H或6H多型形式并具有紫外区发光特性的sp 3键合氮化硼。 其制备方法包括:将含有稀释气稀释的硼和氮的反应混合气引入反应室; 并且照射放置在所述室中的基板的表面,所述基板上的生长表面以及围绕所述生长表面的紫外线的生长间隔区域以引起气相反应,从而在所述基板上产生,沉积或生长所述氮化硼 。

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