公开(公告)号：US4696810A

公开(公告)日：1987-09-29

申请号：US847148

申请日：1986-04-02

Applicant: Shin-ichi Shirasaki ,  Yasunari Hotta ,  Hiroshi Yamamura ,  Shin-ichi Matsuda ,  Kazuyuki Kakegawa ,  Yusuke Moriyoshi ,  Koichiro Takahashi ,  Hajime Haneda

Inventor： Shin-ichi Shirasaki ,  Yasunari Hotta ,  Hiroshi Yamamura ,  Shin-ichi Matsuda ,  Kazuyuki Kakegawa ,  Yusuke Moriyoshi ,  Koichiro Takahashi ,  Hajime Haneda

IPC: C01G23/00 ,  C01G25/00 ,  C04B35/491 ,  C01G25/02 ,  C01G23/04

CPC classification number: C01G23/006 ,  C01G23/003 ,  C01G25/00 ,  C01G25/006 ,  C04B35/491 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2004/62 ,  C01P2006/10

Abstract: A process for producing a powder material of perovskite or its solid solution represented by the formula:ABO.sub.3wherein A is one or more metal elements coordinated with 12 oxygen atoms, and B is one or more metal elements coordinated with 6 oxygen atoms, which comprises contacting an aqueous or alcohol solution of either component A or component B with a precipitating solution to form precipitates, then adding an aqueous or alcohol solution of the other component to form precipitates, and drying the precipitates, followed by calcining at a temperature of from 400.degree. to 1200.degree. C.

Abstract translation: 一种生产钙钛矿粉末材料或其固溶体的方法，其由下列通式：ABO 3表示，其中A是与12个氧原子配位的一种或多种金属元素，B是与6个氧原子配位的一种或多种金属元素，其包括接触 组分A或组分B的水溶液或醇溶液与沉淀溶液形成析出物，然后加入其他组分的水溶液或醇溶液形成析出物，并干燥沉淀，然后在400℃的温度下煅烧 至1200℃

公开(公告)号：US07759662B2

公开(公告)日：2010-07-20

申请号：US11792995

申请日：2005-12-13

Applicant: Shojiro Komatsu ,  Toyohiro Chikyo ,  Katsuyuki Okada ,  Yusuke Moriyoshi

Inventor： Shojiro Komatsu ,  Toyohiro Chikyo ,  Katsuyuki Okada ,  Yusuke Moriyoshi

IPC: G21K5/02

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30446

Abstract: In an electron emission method, a voltage is applied to a field electron emission element that has a boron nitride material containing crystal, formed on an element substrate to show a conical projection of the boron nitride material and shows a stable electron emitting property in an atmosphere when a voltage is applied thereto to emit electrons. An electron emission threshold of the field electron emission element falls due to formation of a surface electric dipolar layer by bringing it into contact with an operating atmosphere containing polar solvent gas when applying a voltage to the field electron emission element so as to emit electrons.

Abstract translation: 在电子发射方法中，将电压施加到具有包含晶体的氮化硼材料的场致电子发射元件，所述场致电子元件形成在元件基板上，以显示氮化硼材料的圆锥形突起并且在大气中显示出稳定的电子发射特性 当施加电压以发射电子时。 场电子发射元件的电子发射阈值由于通过在向场致发射元件施加电压而与含有极性溶剂气体的操作气氛接触时形成表面电偶极层而下降，以发射电子。

公开(公告)号：US20100151193A1

公开(公告)日：2010-06-17

申请号：US12379723

申请日：2009-02-27

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Yoshiki Shimizu ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Yoshiki Shimizu ,  Katsuyuki Okada

IPC: B32B3/30

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

Abstract: A membrane body of sp3-bonded boron nitride has excellent field electron emission. The membrane body can withstand high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The membrane body includes a surface texture in a self-organized manner by vapor-phase deposition.

Abstract translation: sp3键合氮化硼的膜体具有优异的场电子发射。 膜体可以承受高强度的电场，允许电子的增强的发射导致高的电流密度，并且在长时间使用中不会降解。 膜体通过气相沉积以自组织的方式包括表面纹理。

公开(公告)号：US07419572B2

公开(公告)日：2008-09-02

申请号：US10518644

申请日：2003-07-01

Applicant: Shojiro Komatsu ,  Katsuyuki Okada ,  Yusuke Moriyoshi

Inventor： Shojiro Komatsu ,  Katsuyuki Okada ,  Yusuke Moriyoshi

IPC: B01J19/08 ,  B01J19/12 ,  C01B21/064

CPC classification number: C09K11/63 ,  C09K11/0883 ,  C23C14/0026 ,  C23C14/0647 ,  C23C14/28 ,  C23C16/342 ,  C23C16/482 ,  C23C16/50 ,  C23C16/513

Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

Abstract translation: 本发明提供由通式BN代表的具有六方晶5H或6H多型形式并具有紫外区发光特性的sp 3键合氮化硼。 其制备方法包括：将含有稀释气稀释的硼和氮的反应混合气引入反应室; 并且照射放置在所述室中的基板的表面，所述基板上的生长表面以及围绕所述生长表面的紫外线的生长间隔区域以引起气相反应，从而在所述基板上产生，沉积或生长所述氮化硼 。

公开(公告)号：US4438051A

公开(公告)日：1984-03-20

申请号：US387779

申请日：1982-06-14

Applicant: Mamoru Mitomo ,  Yusuke Moriyoshi ,  Toshikazu Sakai ,  Toshiaki Osaka

Inventor： Mamoru Mitomo ,  Yusuke Moriyoshi ,  Toshikazu Sakai ,  Toshiaki Osaka

IPC: C04B35/626 ,  C04B35/597 ,  C04B35/599 ,  C04B35/58 ,  C04B35/64

CPC classification number: C04B35/597 ,  Y10S264/91 ,  Y10S501/904

Abstract: A process for producing a translucent .beta.-sialon sintered product, which comprises mixing fine powders of silicon nitride and aluminum nitride having a high purity of at least 99% and a particle size of at most 200 microns and fine powders of aluminum oxide and silicon oxide having a high purity of at least 99% in such a proportion as to form .beta.-sialon of the formula Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z where z is from 1 to 4.2, and hot-pressing the mixture in a nitrogen atmosphere at a temperature of from 1500.degree. to 1850.degree. C. under pressure of from 10 to 1500 kg/cm.sup.2.

Abstract translation: 一种制造半透明β-硅铝氧氮合金烧结产品的方法，其包括将具有至少99％的高纯度和至多200微米的高纯度的氮化硅和氮化铝的细粉末与氧化铝和氧化硅的细粉末混合 具有至少99％的高纯度，其比例为形成式Si 6-z Al z O z N 8-z的β-赛隆，其中z为1至4.2，并且在氮气气氛中将该混合物在 1500至1850℃，压力为10至1500kg / cm2。

公开(公告)号：US20080030152A1

公开(公告)日：2008-02-07

申请号：US11665250

申请日：2005-12-21

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

IPC: H01J11/04 ,  C01B21/064 ,  H05H1/24 ,  C23C8/00

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每一个都包括结合氮化硼的sp 3+，sp 2+结合的硼 氮化物或其混合物，并且各自表现出场电子发射性优异的锐端形状; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

公开(公告)号：US07947243B2

公开(公告)日：2011-05-24

申请号：US11665250

申请日：2005-12-21

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

IPC: C01B35/00 ,  C01B21/064 ,  C01B25/00 ,  C01D3/02 ,  H01J11/04 ,  C23C14/28 ,  C23C16/00 ,  B05D3/02 ,  B05D3/00 ,  H05H1/24 ,  B01J19/12 ,  H01L21/4763

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每个都包含sp 3键合的氮化硼，sp2结合的氮化硼或其混合物，并且每个都显示出急剧的形状 场电子发射特性优异; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

公开(公告)号：US20090305885A1

公开(公告)日：2009-12-10

申请号：US11628787

申请日：2005-06-07

Applicant: Hirohisa Yamada ,  Kenji Tamura ,  Junzo Tanaka ,  Toshiyuki Ikoma ,  Yasushi Suetsugu ,  Yusuke Moriyoshi ,  Yujiro Watanabe

Inventor： Hirohisa Yamada ,  Kenji Tamura ,  Junzo Tanaka ,  Toshiyuki Ikoma ,  Yasushi Suetsugu ,  Yusuke Moriyoshi ,  Yujiro Watanabe

IPC: B01J20/08 ,  B01J20/00 ,  G21F9/16

CPC classification number: B01J20/06 ,  B01J20/0222 ,  B01J20/0225 ,  B01J20/0251 ,  B01J20/0259 ,  B01J20/041 ,  B01J20/08 ,  B01J20/28004 ,  B01J20/28019 ,  B01J20/30 ,  C02F1/281 ,  C02F1/288 ,  C02F2101/006 ,  G21F9/02 ,  G21F9/12 ,  G21F9/30

Abstract: An adsorbent for radioelement-containing waste composed of the following spherical layered double hydroxide (A) or spherical metal hydroxide (B) is provided. (A) is a nonstoichiometric compound represented by general formula (a) or (b): [M2+1-xM3+x(OH)2]x+[An−x/n.mH2O]x− . . . (a), [Al2Li(OH)6]x+[An−x/n.mH2O]x− . . . (b) wherein 0.1≦x≦0.4, 0

Abstract translation: 提供了由以下球形层状双氢氧化物（A）或球状金属氢氧化物（B）组成的含放射性元素的废物的吸附剂。 （A）是由通式（a）或（b）表示的非化学计量的化合物：[M2 + 1-xM3 + x（OH）2] x + [An-x / n.mH2O] x-。 。 。 （a），[Al 2 Li（OH）6] x + [An-x / n.mH 2 O] x - 。 。 。 （b）其中0.1 <= x <= 0.4,0

公开(公告)号：US20080122370A1

公开(公告)日：2008-05-29

申请号：US11792995

申请日：2005-12-13

Applicant: Shojiro Komatsu ,  Toyohiro Chikyo ,  Katsuyuki Okada ,  Yusuke Moriyoshi

Inventor： Shojiro Komatsu ,  Toyohiro Chikyo ,  Katsuyuki Okada ,  Yusuke Moriyoshi

IPC: G09G3/10

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30446

Abstract: There are provided an electron emission element that operates stably in the atmosphere, a method of manufacturing the same and a method of emitting field electrons using such an element as well as an emission/display device realized by using a cold cathode electron source having a surface profile showing an excellent field electron characteristic and showing a low electron emission threshold value, a high output level and a long service life.A dilute material gas of rare gas such as argon and/or helium, hydrogen or a mixture gas thereof is used. An electron emission element substrate (4) is held to a temperature level between room temperature and 1,300° C. in an atmosphere where boron source material gas and nitride source material gas are introduced to 0.0001 to 100 volume % relative to the dilute material gas under pressure of 0.001 to 760 Torr, causing plasma to be generated typically by means of a plasma torch (7) or without causing plasma to be generated, and irradiated with ultraviolet rays by means of an excimer ultraviolet laser (6) or the like to make the material gas to react so as to form a boron nitride material containing crystal that has a pointed profile and is expressed by BN on the element substrate in a self-forming manner. The produced boron nitride material operates as field electron emission element that emits electrons stably in the atmosphere when a voltage is applied thereto. The reaction product is taken out from the reaction vessel (1) with the substrate after the end of the reaction and a cold cathode type emission/display device is assembled by using the reaction product as field electron emission source.

Abstract translation: 提供了在大气中稳定运行的电子发射元件，其制造方法和使用这种元件发射场电子的方法以及通过使用具有表面的冷阴极电子源实现的发射/显示装置 表现出优异的场电子特性，显示出低电子发射阈值，高输出电平和长使用寿命。 使用诸如氩和/或氦，氢气或其混合气体的稀有气体的稀材料气体。 在硼源材料气体和氮化物源材料气体引入的气氛中相对于稀释材料气体将电子发射元件基板（4）保持在室温至1300℃的温度水平， 压力为0.001至760托，通常通过等离子体焰炬（7）产生等离子体，或不产生等离子体，并通过受激准分子紫外线激光（6）等照射紫外线， 所述材料气体反应以形成含有尖锐轮廓的含有晶体的氮化硼材料，并且以自形成方式在BN上在元件基板上表示。 所产生的氮化硼材料作为场电子发射元件工作，当施加电压时，其在大气中稳定地发射电子。 在反应结束后，用反应容器（1）从反应容器（1）中取出反应产物，并使用反应产物作为场电子发射源组装冷阴极发射/显示装置。

公开(公告)号：US20070017700A1

公开(公告)日：2007-01-25

申请号：US10569545

申请日：2004-08-27

Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Yoshiki Shimizu ,  Katsuyuki Okada

Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Yoshiki Shimizu ,  Katsuyuki Okada

IPC: H05K9/00

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

Abstract: The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The solving means consists of providing a membrane body of sp3-bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300° C.; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.

Abstract translation: 本发明的目的是提供一种能够承受高强度电场的场致电子发射的材料，能够增强电子发射，从而产生高密度电流，并且在长期使用中不会降解。 解决方案包括提供通过包括以下步骤的方法获得的场致电子发射极好的sp 3+氮化硼的膜体，所述方法包括以下步骤：将包含硼源和氮源的反应性气体引入到 反应体系; 调节反应室中的基板的温度在室温至1300℃之间。 在有或没有同时存在等离子体的情况下将UV光束照射到衬底上; 并且通过气相反应在基板上形成膜，其中以自组织的方式形成允许优异的场电子发射的表面纹理。