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    Displays with Supplemental Loading Structures
    11.
    发明申请
    Displays with Supplemental Loading Structures 审中-公开

    公开(公告)号：US20200013360A1

    公开(公告)日：2020-01-09

    申请号：US16518527

    申请日：2019-07-22

    Applicant: Apple Inc.

    Inventor： Shin-Hung Yeh ,  Abbas Jamshidi Roudbari ,  Ting-Kuo Chang

    IPC: G09G3/36 ,  G09G3/00 ,  H01L27/12 ,  G02F1/1362

    Abstract: A display may have an array of pixels such as liquid crystal display pixels. The display may include short pixel rows that span only partially across the display and full-width pixel rows that span the width of the display. The gate lines coupled to the short pixel rows may extend into the inactive area of the display. Supplemental gate line loading structures may be located in the inactive area of the display to increase loading on the gate lines that are coupled to short pixel rows. The supplemental gate line loading structures may include data lines and doped polysilicon that overlap the gate lines in the inactive area. In displays that combine display and touch functionality into a thin-film transistor layer, supplemental loading structures may be used in the inactive area to increase loading on common voltage lines that are coupled to short rows of common voltage pads.

    Light-emitting diode display with reduced leakage
    12.
    发明授权
    Light-emitting diode display with reduced leakage 有权

    公开(公告)号：US10431154B2

    公开(公告)日：2019-10-01

    申请号：US15431337

    申请日：2017-02-13

    Applicant: Apple Inc.

    Inventor： Tsung-Ting Tsai ,  Shinya Ono ,  Chin-Wei Lin ,  Ting-Kuo Chang

    IPC: G09G3/3233 ,  G09G3/3266 ,  H01L27/32

    Abstract: An organic light-emitting diode display may contain an array of display pixels. Each display pixel may have a respective organic light-emitting diode that is controlled by a drive transistor. At low temperatures, it may be necessary to increase the amount of current through an organic light-emitting diode to achieve a desired luminance level. In order to increase the current through the light-emitting diode, the ground voltage level may be lowered. However, this may lead to thin-film transistors within the pixel leaking, which may result in undesirable display artifacts such as bright dots being displayed in a dark image. In order to prevent leakage in the transistors, the transistors may be coupled to separate reference voltage supplies or separate control lines. Additionally, the transistors may be positioned to minimize leakage even at low ground voltage levels.

    Display circuitry with reduced metal routing resistance
    17.
    发明授权
    Display circuitry with reduced metal routing resistance 有权

    公开(公告)号：US09704888B2

    公开(公告)日：2017-07-11

    申请号：US14150458

    申请日：2014-01-08

    Applicant: Apple Inc.

    Inventor： Yu Cheng Chen ,  Shih-Chang Chang ,  Hiroshi Osawa ,  Ting-Kuo Chang

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/124 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/78645

    Abstract: A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors formed on top of a glass substrate. A passivation layer may be formed on the thin-film transistor layers. An oxide liner may be formed on the passivation layer. A first low-k dielectric layer may be formed on the oxide liner. A second low-k dielectric layer may be formed on the first low-k dielectric layer. A common voltage electrode and associated storage capacitance may be formed on the second low-k dielectric layer. Thin-film transistor gate structures may be formed in the passivation layer. Conductive routing structures may be formed on the oxide liner, on the first low-k dielectric layer, and on the second low-k dielectric layer. The use of routing structures on the oxide liner reduces overall routing resistance and enables interlaced metal routing, which can help reduce the inactive border area outside the active display regions.

    Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors
    19.
    发明授权
    Display driver circuitry for liquid crystal displays with semiconducting-oxide thin-film transistors 有权
    用半导体氧化物薄膜晶体管显示液晶显示器的驱动电路

    公开(公告)号：US09412799B2

    公开(公告)日：2016-08-09

    申请号：US14228098

    申请日：2014-03-27

    Applicant: Apple Inc.

    Inventor： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

    IPC: G06F3/038 ,  H01L27/32 ,  H01L27/12 ,  G09G3/36 ,  G02F1/1368 ,  G09G3/32 ,  G02F1/1362

    CPC classification number: H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    In-cell touch for LED
    20.
    发明授权
    In-cell touch for LED 有权
    针对LED的单元内触摸

    公开(公告)号：US09336723B2

    公开(公告)日：2016-05-10

    申请号：US13766376

    申请日：2013-02-13

    Applicant: Apple Inc.

    Inventor： Vasudha Gupta ,  Shih Chang Chang ,  Young-Bae Park ,  Ting-Kuo Chang

    IPC: G09G3/34 ,  G06F3/041 ,  G06F3/044 ,  G09G3/32 ,  H01L27/32

    CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G09G3/3208 ,  G09G3/3233 ,  G09G3/34 ,  G09G2300/0861 ,  G09G2300/0866 ,  H01L27/323

    Abstract: A touch screen having touch circuitry integrated into a display pixel stackup. The touch screen can include a transistor layer, an LED layer and a first layer. The first layer can operate as an LED cathode during a display phase and as touch circuitry during a touch sensing phase. The transistor layer can be at least partially utilized for transitioning between the display phase and the touch sensing phase. The touch screen can be fabricated to reduce or eliminate damage to the LED layer.

    Abstract translation: 具有集成到显示像素堆叠中的触摸电路的触摸屏。 触摸屏可以包括晶体管层，LED层和第一层。 在显示阶段，第一层可以作为LED阴极工作，在触摸感测阶段可以作为触摸电路。 晶体管层可以至少部分地用于在显示阶段和触摸感测阶段之间的转换。 可以制造触摸屏以减少或消除对LED层的损坏。

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