公开(公告)号：US12033866B2

公开(公告)日：2024-07-09

申请号：US18116556

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

CPC classification number: H01L21/32135 ,  C23F4/02 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/265 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US11562904B2

公开(公告)日：2023-01-24

申请号：US16934730

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220342302A1

公开(公告)日：2022-10-27

申请号：US17862283

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Zhenxing Han ,  Luisa Bozano ,  Madhur Sachan

IPC: G03F7/004 ,  H01L21/308 ,  G03F7/40 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of patterning a metal oxo photoresist. In an embodiment, the method comprises depositing the metal oxo photoresist on a substrate, treating the metal oxo photoresist with a first treatment, exposing the metal oxo photoresist with an EUV exposure to form exposed regions and unexposed regions, treating the exposed metal oxo photoresist with a second treatment, and developing the metal oxo photoresist.

公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US12300491B2

公开(公告)日：2025-05-13

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US12282256B2

公开(公告)日：2025-04-22

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US20240160100A1

公开(公告)日：2024-05-16

申请号：US18222897

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Tzu Shun Yang ,  Zhenxing Han ,  Madhur Sachan ,  Lequn Liu ,  Nasrin Kazem ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/16 ,  G03F7/36 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/167 ,  G03F7/36 ,  G03F7/70033 ,  H01L21/0274

Abstract: Embodiments disclosed herein may include a method for developing a photopatterned metal oxo photoresist. In an embodiment, the method may include pre-treating the photopatterned metal oxo photoresist with a pre-treatment process, developing the photopatterned metal oxo photoresist with a thermal dry develop process to selectively remove a portion of the photopatterned metal oxo photoresist and form a resist mask. In an embodiment, the thermal dry develop process includes a first sub-operation, and a second sub-operation that is different than the first sub-operation. In an embodiment, the process further includes post-treating the resist mask with a post-treatment process.

公开(公告)号：US20220262625A1

公开(公告)日：2022-08-18

申请号：US17574370

申请日：2022-01-12

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Kelvin Chan ,  Mark Joseph Saly

IPC: H01L21/027 ,  H01L21/033 ,  H01J37/32 ,  G03F7/16

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using chemical vapor condensation deposition processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber from an ampoule maintained at a first temperature. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. The photoresist layer is a metal oxo containing material. The substrate is maintained at a second temperature less than the first temperature during the formation of the photoresist layer on the surface of the substrate.

公开(公告)号：US20220155689A1

公开(公告)日：2022-05-19

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US11217443B2

公开(公告)日：2022-01-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.