公开(公告)号：US20200211769A1

公开(公告)日：2020-07-02

申请号：US16289328

申请日：2019-02-28

Applicant: APPLIED MATERIALS, INC.

Inventor： DANIEL LEE DIEHL ,  ALEXANDER LERNER ,  ROEY SHAVIV

IPC: H01F41/34 ,  H01F41/18 ,  C23C14/04

Abstract: Methods and apparatus for a magnetized substrate carrier apparatus are described herein. In some embodiments, a substrate carrier apparatus includes: a carrier plate having a support surface to support a substrate, a mask assembly disposed above the support surface, wherein the mask assembly includes an annular frame and a shadow mask disposed within the annular frame, and wherein the shadow mask includes one or more openings arranged in a predetermined pattern and disposed through the shadow mask, and one or more magnets disposed on or embedded within at least one of the carrier plate and the shadow mask to create a magnetic field above the support surface.

公开(公告)号：US20190382890A1

公开(公告)日：2019-12-19

申请号：US16442527

申请日：2019-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： ALEXANDER LERNER ,  ROEY SHAVIV ,  PHILLIP STOUT ,  JOSEPH M. RANISH ,  PRASHANTH KOTHNUR ,  SATISH RADHAKRISHNAN

IPC: C23C16/448 ,  H01L21/67 ,  C23C16/455

Abstract: Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

公开(公告)号：US20190198392A1

公开(公告)日：2019-06-27

申请号：US15853165

申请日：2017-12-22

Applicant: APPLIED MATERIALS, INC.

Inventor： AMRITA B. MULLICK ,  ISMAIL EMESH ,  UDAY MITRA ,  ROEY SHAVIV ,  REGINA FREED

IPC: H01L21/768 ,  H01L21/3205 ,  H01L21/3213 ,  C23F1/38 ,  C23F1/26

CPC classification number: H01L21/76883 ,  C23F1/26 ,  C23F1/38 ,  H01L21/32051 ,  H01L21/32134 ,  H01L21/7684

Abstract: Methods of etching tungsten are disclosed including: leveling a first top surface of a tungsten layer within a feature and atop a top surface of a substrate; and etching the tungsten layer with a peroxide such as hydrogen peroxide and one of a strong acid or a strong base to remove a first portion of the tungsten layer from atop the substrate to form a second top surface of a tungsten layer at a level below the top surface of the substrate. The methods are suitable for forming substantially level or flat top surfaces of a tungsten layer at a level below the top surface of the substrate or within one or more features such as vias or trenches.