公开(公告)号：US20160196953A1

公开(公告)日：2016-07-07

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  SAMER BANNA ,  ANKUR AGARWAL ,  ZHIGANG CHEN ,  TSE-CHIANG WANG ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  SHAHID RAUF

IPC: H01J37/32

CPC classification number: H01J37/321 ,  B44C1/227 ,  C23C16/505 ,  H01J37/32165 ,  H01J37/3244

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

公开(公告)号：US20140273304A1

公开(公告)日：2014-09-18

申请号：US14206723

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： ALVARO GARCIA DE GORORDO ,  WAHEB BISHARA ,  SAMER BANNA

IPC: H01L21/3065 ,  H01L21/66

CPC classification number: H01J37/3266 ,  H01J37/321 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.

Abstract translation: 本文提供了等离子体增强基板处理的方法和装置。 在一些实施例中，提供了一种用于处理处理室中的基板的方法，该处理室具有设置在处理室周围的多个电磁体，以至少在基板层处在处理室内形成磁场。 在一些实施例中，该方法包括确定处理室内存在的外部磁场的第一方向，同时不向多个电磁体提供电流; 向所述多个电磁体提供一定范围的电流以在所述处理室内产生具有与所述第一方向相反的第二方向的磁场; 在电流范围内确定磁场的第二方向上的期望幅度; 以及使用等离子体处理处理室中的衬底，同时静态地将所述磁场提供到期望的大小。

公开(公告)号：US20140273297A1

公开(公告)日：2014-09-18

申请号：US14204668

申请日：2014-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  OLIVIER JOUBERT ,  LEI LIAN ,  MAXIME DARNON ,  NICOLAS POSSEME ,  LAURENT VALLIER

IPC: H01L21/66

CPC classification number: H01L22/26 ,  G03F7/70625 ,  H01L21/0273 ,  H01L21/3086 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

Abstract: In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.

Abstract translation: 在一些实施例中，在半导体制造工艺中控制光致抗蚀剂修剪工艺的方法可以包括在衬底的第一表面之上形成光致抗蚀剂层，其中光致抗蚀剂层包括具有要蚀刻到第一表面中的第一图案的下层 以及具有未蚀刻到所述基板的第一表面中的第二图案的上层; 在平行于基板的第一表面的方向上修整光致抗蚀剂层; 在修整过程中使用光学测量工具测量第二图案的修剪率; 以及将所述第二图案的修整率与所述第一图案的修剪率相关联，以在所述修整处理期间控制所述第一图案的修整率。

公开(公告)号：US20140262044A1

公开(公告)日：2014-09-18

申请号：US14196360

申请日：2014-03-04

Applicant: APPLIED MATERIALS, INC.

Inventor： IMAD YOUSIF ,  SAMER BANNA ,  WAHEB BISHARA ,  ALVARO GARCIA DE GORORDO

IPC: H01J37/32

CPC classification number: H01J37/3266 ,  H01J37/32192 ,  H01J37/32651

Abstract: Embodiments of the present invention generally relate to an apparatus for processing substrates having improved magnetic shielding. One embodiment of the present invention provides a plasma processing chamber having an RF match, a plasma source and a plasma region defined between a chamber ceiling and a substrate support. At least one of the RF match, plasma source and plasma region is shielded from any external magnetic field with a shielding material that has a relative magnetic permeability ranging from about 20,000 to about 200,000. As a result, the inherent process non-uniformities of the hardware may be reduced effectively without the overlaid non-uniformities from external factors such as earth's geomagnetic field.

Abstract translation: 本发明的实施例一般涉及用于处理具有改进的磁屏蔽的基板的设备。 本发明的一个实施例提供了一种具有RF匹配，等离子体源和限定在室顶板和衬底支架之间的等离子体区域的等离子体处理室。 RF匹配，等离子体源和等离子体区域中的至少一个屏蔽具有相对导磁率为约20,000至约200,000的屏蔽材料的任何外部磁场。 结果，可以有效地降低硬件的固有过程不均匀性，而不会受到诸如地球地磁场等外部因素的重叠的不均匀性的影响。

公开(公告)号：US20130154175A1

公开(公告)日：2013-06-20

申请号：US13651354

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN TODOROW ,  SAMER BANNA ,  IMAD YOUSIF ,  ALBERT WANG ,  GARY LERAY

IPC: H01L21/68

Abstract: Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.

Abstract translation: 本文提供了与处理室的基板支撑件一起使用的工艺套件组件。 在一些实施例中，处理套件环可以包括具有外边缘，内边缘，顶表面和底部的环形主体，其中外边缘具有约12.473英寸至约12.479英寸的直径，并且内边缘具有 约11.726英寸至约11.728英寸的直径，并且其中所述环形体具有约0.116至约0.118英寸的高度; 以及设置在所述环形体的上表面上的多个突起，所述多个突起中的每一个围绕所述环形体对称设置。

公开(公告)号：US20130110435A1

公开(公告)日：2013-05-02

申请号：US13647624

申请日：2012-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： GARY LERAY ,  VALENTIN NIKOLOV TODOROW ,  SAMER BANNA

IPC: G06F19/00 ,  G01R27/16

CPC classification number: H01L21/6833 ,  G06F19/00

Abstract: Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.

Abstract translation: 用于计算处理室中的衬底上的自偏压的方法可以包括测量设​​置在处理室的衬底支撑件上的衬底的DC电位，同时以第一频率从电源向阴极提供偏置功率; 测量在耦合到电源的匹配网络处的电压，电流和相移，同时提供偏置功率; 通过确定所计算的电压和所测量的所述基板的DC电位之间的线性关系来计算所述阴极的有效阻抗; 计算所计算的电压与所测量的所述基板的DC电位之间的线性关系的第一线性系数和第二线性系数; 以及通过利用第一线性系数，第二线性系数，测量的衬底的DC电位，有效阻抗和测量的相移来计算衬底上的自偏压。

公开(公告)号：US20130106286A1

公开(公告)日：2013-05-02

申请号：US13650835

申请日：2012-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMER BANNA ,  ZHIGANG CHEN ,  VALENTIN TODOROW

IPC: H05H1/46 ,  C23F1/08

CPC classification number: H05H1/46 ,  C23F1/08 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H05H2001/4667

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

Abstract translation: 等离子体处理装置可以包括具有内部处理量的处理室; 将RF能量耦合到处理量的第一RF线圈; 第二RF线圈，用于将RF能量耦合到所述处理容积中，所述第二RF线圈相对于所述第一RF线圈同轴布置; 以及第三RF线圈，用于将RF能量耦合到所述处理容积中，所述第三RF线圈相对于所述第一RF线圈同轴设置，其中当RF电流流过所述每个所述RF线圈时，所述RF电流流出， 相对于至少另一个RF线圈的RF线圈中的至少一个相位，或RF电流的相位可以被选择性地控制为在至少一个RF线圈中是同相或异相 相对于至少另一个RF线圈。