公开(公告)号：US20220380883A1

公开(公告)日：2022-12-01

申请号：US17329796

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Mengxue WU ,  Siew Kit HOI ,  Jay Min SOH

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34

Abstract: Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.

公开(公告)号：US20220122871A1

公开(公告)日：2022-04-21

申请号：US17072082

申请日：2020-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi WADA ,  Kok Wei TAN ,  Chul Nyoung LEE ,  Siew Kit HOI ,  Xinxin WANG ,  Zheng Min Clarence CHONG ,  Yaoying ZHONG ,  Kok Seong TEO

IPC: H01L21/683 ,  C23C4/134 ,  C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：US20170117180A1

公开(公告)日：2017-04-27

申请号：US15335721

申请日：2016-10-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit HOI ,  Arvind SUNDARRAJAN ,  Jiao SONG

IPC: H01L21/768 ,  C23C14/16 ,  H01J37/32 ,  C23C14/34 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76865 ,  C23C14/046 ,  C23C14/165 ,  C23C14/34 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32339 ,  H01J37/3244 ,  H01L21/2855 ,  H01L21/67069 ,  H01L21/76862 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329

Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.