公开(公告)号：US20220033956A1

公开(公告)日：2022-02-03

申请号：US16945491

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： David GUNTHER ,  Jiao SONG ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC: C23C14/16 ,  C23C14/56 ,  C23C14/35 ,  C23C14/50 ,  H01L21/768

Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

公开(公告)号：US20220384165A1

公开(公告)日：2022-12-01

申请号：US17333732

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Mengxue WU ,  Siew Kit HOI ,  Jay Min SOH ,  Yue CUI ,  Chul Nyoung LEE ,  Palaniappan CHIDAMBARAM ,  Jiao SONG

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

公开(公告)号：US20220037128A1

公开(公告)日：2022-02-03

申请号：US16945445

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Kirankumar Neelasandra SAVANDAIAH ,  Jiao SONG ,  David GUNTHER ,  Irena H. WYSOK ,  Anthony Chih-Tung CHAN

IPC: H01J37/32 ,  H01L21/687 ,  C23C14/34 ,  H01J37/34

Abstract: Embodiments of deposition rings for use in a process chamber are provided herein. In some embodiments, a deposition ring includes: an annular body; an inner wall extending upward from an inner portion of the annular body; and an outer wall extending upward form an outer portion of the annular body to define a large deposition cavity between the inner wall and the outer wall, wherein a width of the large deposition cavity is about 0.35 inches to about 0.60 inches, wherein the outer wall includes an outer ledge and an inner ledge raised with respect to the outer ledge.

公开(公告)号：US20210407778A1

公开(公告)日：2021-12-30

申请号：US16916494

申请日：2020-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Jiao SONG ,  Anthony Chih-Tung CHAN ,  David GUNTHER ,  Kirankumar Neelasandra SAVANDAIAH ,  Irena H. WYSOK

IPC: H01J37/34 ,  C23C14/35

Abstract: Methods and apparatus for processing a substrate are provided herein. In embodiments, a magnetron assembly for use in a PVD chamber includes: a base plate having a first side, a second side opposite the first side, and a central axis; a magnet plate rotatably coupled to the base plate, wherein the magnet plate rotates with respect to the base plate about an offset axis; a magnet assembly coupled to the magnet plate offset from the offset axis and configured to rotate about the central axis and the offset axis; a first motor coupled to the base plate to rotate the magnet assembly about the central axis; and a second motor coupled to the magnet plate to control an angular position thereof and to position the magnet assembly in each of a plurality of fixed angular positions defining a plurality of different fixed radii.

公开(公告)号：US20170117180A1

公开(公告)日：2017-04-27

申请号：US15335721

申请日：2016-10-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit HOI ,  Arvind SUNDARRAJAN ,  Jiao SONG

IPC: H01L21/768 ,  C23C14/16 ,  H01J37/32 ,  C23C14/34 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/76865 ,  C23C14/046 ,  C23C14/165 ,  C23C14/34 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32339 ,  H01J37/3244 ,  H01L21/2855 ,  H01L21/67069 ,  H01L21/76862 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329

Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.