Determination of defect location for examination of a specimen

    公开(公告)号:US11423529B2

    公开(公告)日:2022-08-23

    申请号:US16794172

    申请日:2020-02-18

    Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.

    System and methods of generating comparable regions of a lithographic mask

    公开(公告)号:US11263741B2

    公开(公告)日:2022-03-01

    申请号:US16752353

    申请日:2020-01-24

    Abstract: Implementations of the disclosure provide methods for generating an in-die reference for die-to-die defect detection techniques. The inspection methods using in-die reference comprise finding similar blocks of a lithographic mask, the similar blocks are defined by similar CAD information. A comparison distance is selected based on (i) areas of the similar blocks and (ii) spatial relationships between the similar blocks. The similar blocks are aggregated, based on the comparison distance, to provide multiple aggregated areas; and comparable regions of the lithographic mask are defined based on the multiple aggregate blocks. Images of at least some of the comparable regions of the lithographic mask are acquired using an inspection module. The acquired images are compared.

    Method of deep learning-based examination of a semiconductor specimen and system thereof

    公开(公告)号:US11205119B2

    公开(公告)日:2021-12-21

    申请号:US15384058

    申请日:2016-12-19

    Abstract: There are provided system and method of examining a semiconductor specimen. The method comprises: upon obtaining a Deep Neural Network (DNN) trained for a given examination-related application within a semiconductor fabrication process, processing together one or more fabrication process (FP) images using the obtained trained DNN, wherein the DNN is trained using a training set comprising ground truth data specific for the given application; and obtaining examination-related data specific for the given application and characterizing at least one of the processed one or more FP images. The examination-related application can be, for example, classifying at least one defect presented by at least one FP image, segmenting the at least one FP image, detecting defects in the specimen presented by the at least one FP image, registering between at least two FP images, regression application enabling reconstructing the at least one FP image in correspondence with different examination modality, etc.

    System, method and computer program product for classifying defects

    公开(公告)号:US10921334B2

    公开(公告)日:2021-02-16

    申请号:US15933306

    申请日:2018-03-22

    Abstract: An examination system, a method of obtaining a training set for a classifier, and a non-transitory computer readable medium, the method comprising: upon receiving in a memory device object inspection results comprising data indicative of potential defects, each potential defect of the potential defects associated with a multiplicity of attribute values defining a location of the potential defect in an attribute space: sampling by the processor a first set of defects from the potential defects, wherein the defects within the first set are dispersed independently of a density of the potential defects in the attribute space; and obtaining by the processor a training defect sample set comprising the first set of defects and data or parameters representative of the density of the potential defects in the attribute space.

    Method of deep learning-based examination of a semiconductor specimen and system thereof

    公开(公告)号:US11568531B2

    公开(公告)日:2023-01-31

    申请号:US16892123

    申请日:2020-06-03

    Abstract: There is provided a method of examination of a semiconductor specimen and a system thereof. The method comprises: using a trained Deep Neural Network (DNN) to process a fabrication process (FP) sample, wherein the FP sample comprises first FP image(s) received from first examination modality(s) and second FP image(s) received from second examination modality(s) which differs from the first examination modality(s), and wherein the trained DNN processes the first FP image(s) separately from the second FP image(s); and further processing by the trained DNN the results of such separate processing to obtain examination-related data specific for the given application and characterizing at least one of the processed FP images. When the FP sample further comprises numeric data associated with the FP image(s), the method further comprises processing by the trained DNN at least part of the numeric data separately from processing the first and the second FP images.

    METHOD OF EXAMINING SPECIMENS AND SYSTEM THEREOF

    公开(公告)号:US20220291138A1

    公开(公告)日:2022-09-15

    申请号:US17829593

    申请日:2022-06-01

    Abstract: A system, method and computer readable medium for examining a specimen, the method comprising: obtaining defects of interest (DOIs) and false alarms (FAs) from a review subset selected from a group of potential defects received from an inspection tool, each potential defect is associated with attribute values defining a location of the potential defect in an attribute space; generating a representative subset of the group, comprising potential defects selected in accordance with a distribution of the potential defects within the attribute space, and indicating the potential defects in the representative subset as FA; and training a classifier using data informative of the attribute values of the DOIs, the potential defects of the representative subset, and respective indications thereof as DOIs or FAs, wherein the trained classifier is to be applied to at least some of the potential defects to obtain an estimation of a number of expected DOIs.

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